FEP6ATHE3/45 [VISHAY]
DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;
| 型号： | FEP6ATHE3/45 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 局域网 功效 二极管 |
| 文件： | 总5页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FEP6xT, FEPF6xT, FEPB6xT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
FEATURES
TO-220AB
ITO-220AB
• Power pack
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low leakage current
3
• High forward surge capability
3
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
1
FEP6xT Series
FEPF6xT Series
PIN 1
PIN 2
PIN 1
PIN 2
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AB and ITO-220AB package)
CASE
PIN 3
PIN 3
TO-263AB
K
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
2
TYPICAL APPLICATIONS
1
FEPB6xT Series
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
PRIMARY CHARACTERISTICS
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commerical grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
IF(AV)
6.0 A
VRRM
IFSM
trr
50 V to 200 V
75 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
35 ns
VF
0.975 V
150 °C
meets JESD 201 class 2 whisker test
TJ max.
Polarity: As marked
TO-220AB, ITO-220AB,
TO-263AB
Package
Mounting Torque: 10 in-lbs max.
Diode variations
Common cathode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP6AT
50
FEP6BT
100
FEP6CT
150
FEP6DT
200
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
V
V
VRMS
35
70
105
140
Maximum DC blocking voltage
VDC
50
100
150
200
V
A
Maximum average forward rectified current at TC = 105 °C
IF(AV)
6.0
75
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
TJ, TSTG
VAC
A
°C
V
Operating storage and temperature range
- 55 to + 150
1500
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Revision: 02-Sep-13
Document Number: 88598
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FEP6xT, FEPF6xT, FEPB6xT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL FEP6AT FEP6BT FEP6CT FEP6DT
UNIT
Maximum instantaneous forward voltage
per diode
(1)
3.0 A
VF
0.975
V
T
C = 25 °C
TC = 100 °C
IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
4.0 V, 1 MHz
5.0
50
Maximum DC reverse current
IR
μA
at rated DC blocking voltage per diode
Maximum reverse recovery time per diode
Typical junction capacitance per diode
trr
35
28
ns
I
CJ
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP6
FEPF6
FEPB6
UNIT
Typical thermal resistance from
junction to case per diode
RJC
3.6
5.1
3.6
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
FEP6DT-E3/45
1.81
1.97
1.33
1.33
1.81
1.97
1.33
1.33
45
45
45
81
45
45
45
81
FEPF6DT-E3/45
50/tube
Tube
FEPB6DT-E3/45
FEPB6DT-E3/81
FEP6DTHE3/45 (1)
FEPF6DTHE3/45 (1)
FEPB6DTHE3/45 (1)
FEPB6DTHE3/81 (1)
50/tube
Tube
800/reel
Tape and reel
Tube
50/tube
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 02-Sep-13
Document Number: 88598
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FEP6xT, FEPF6xT, FEPB6xT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
8
100
10
Resistive or Inductive Load
TJ = 125 °C
TJ = 100 °C
6
1
4
0.1
0.01
2
TJ = 25 °C
0
0
25
50
75
100
125
150
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
80
60
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
70
60
50
40
30
20
10
0
50
40
30
20
10
0
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
TJ = 125 °C
10
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 02-Sep-13
Document Number: 88598
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FEP6xT, FEPF6xT, FEPB6xT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.113 (2.87)
0.103 (2.62)
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.145 (3.68)
0.135 (3.43)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
7° REF.
0.580 (14.73)
PIN
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
1
2
3
7° REF.
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.21)
0.195 (4.95)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 02-Sep-13
Document Number: 88598
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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