FEPB16CT-E3/45 [VISHAY]

DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;
FEPB16CT-E3/45
型号: FEPB16CT-E3/45
厂家: VISHAY    VISHAY
描述:

DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

功效 二极管
文件: 总5页 (文件大小:154K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FEP16xT, FEPF16xT, FEPB16xT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Ultrafast Plastic Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Power pack  
• Glass passivated pellet chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
3
3
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
2
1
1
FEP16xT  
FEPF16xT  
PIN 1  
PIN 2  
CASE  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
(for TO-220AB and ITO-220AB package)  
PIN 1  
PIN 2  
PIN 3  
PIN 3  
• AEC-Q101 qualified  
TO-263AB  
(for ITO-220AB and TO-263AB package)  
K
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
TYPICAL APPLICATIONS  
1
FEPB16xT  
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes, DC/DC  
converters, and other power switching application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AB, ITO-220AB, TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
2 x 8.0 A  
Base P/N-E3  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
-
RoHS-compliant, commercial grade  
VRRM  
IFSM  
trr  
50 V to 600 V  
200 A, 125 A  
35 ns, 50 ns  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
VF  
0.95 V, 1.30 V, 1.50 V  
150 °C  
TJ max.  
meets JESD 201 class 2 whisker test  
TO-220AB, ITO-220AB,  
TO-263AB  
Package  
Polarity: as marked  
Mounting Torque: 10 in-lbs max.  
Diode variations  
Common cathode  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL FEP16AT FEP16BT FEP16CT FEP16DT FEP16FT FEP16GT FEP16HT FEP16JT UNIT  
Maximum repetitive peak reverse  
voltage  
VRRM  
50  
100  
150  
200  
300  
400  
500  
600  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
105  
150  
140  
200  
210  
300  
280  
400  
350  
500  
420  
600  
V
V
Maximum DC blocking voltage  
100  
Maximum average forward  
rectified current at TC = 100 °C  
IF(AV)  
16  
A
Peak forward surge current 8.3 ms  
single half sine-wave superimposed  
on rated load per diode  
IFSM  
200  
125  
A
Operating storage and temperature  
range  
TJ, TSTG  
VAC  
-55 to +150  
1500  
°C  
V
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
Revision: 15-Nov-17  
Document Number: 88596  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
FEP16xT, FEPF16xT, FEPB16xT  
www.vishay.com  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)  
FEP  
FEP  
FEP  
FEP  
FEP  
FEP  
FEP  
FEP  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
UNIT  
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT  
Maximum instantaneous  
forward voltage per diode  
(1)  
8.0 A  
VF  
0.95  
35  
1.30  
1.50  
V
Maximum DC reverse  
current per diode at rated DC  
blocking voltage  
T
C = 25 °C  
TC = 100 °C  
IF = 0.5 A, IR = 1.0 A,  
10  
IR  
μA  
500  
Maximum reverse recovery  
time per diode  
trr  
50  
ns  
I
rr = 0.25 A  
Typical junction capacitance  
per diode  
4.0 V, 1 MHz  
CJ  
85  
60  
pF  
Note  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
FEP  
FEPF  
FEPB  
2.2  
UNIT  
Typical thermal resistance from junction to case per diode  
RJC  
2.2  
3.1  
°C/W  
ORDERING INFORMATION (Example)  
PACKAGE  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
ITO-220AB  
TO-263AB  
TO-263AB  
PREFERRED P/N  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
50/tube  
DELIVERY MODE  
Tube  
FEP16JT-E3/45  
1.85  
1.97  
1.35  
1.35  
1.97  
1.35  
1.35  
45  
45  
45  
81  
45  
45  
81  
FEPF16JT-E3/45  
50/tube  
Tube  
FEPB16JT-E3/45  
FEPB16JT-E3/81  
FEPF16JTHE3/45 (1)  
FEPB16JTHE3/45 (1)  
FEPB16JTHE3/81 (1)  
50/tube  
Tube  
800/reel  
Tape and reel  
Tube  
50/tube  
50/tube  
Tube  
800/reel  
Tape and reel  
Note  
(1)  
AEC-Q101 qualified, available in ITO-220AB and TO-263AB package  
Revision: 15-Nov-17  
Document Number: 88596  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
FEP16xT, FEPF16xT, FEPB16xT  
www.vishay.com  
Vishay General Semiconductor  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
20  
16  
12  
8
100  
10  
TJ = 125 °C  
50 V to 400 V  
500 V to 600 V  
Resistive or Inductive Load  
1
TJ = 100 °C  
TJ = 25 °C  
0.1  
4
0
0.01  
0
50  
100  
150  
0
20  
40  
60  
80  
100  
Case Temperature (°C)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 1 - Forward Current Derating Curve  
Fig. 4 - Typical Reverse Characteristics Per Diode  
300  
250  
200  
150  
100  
50  
1000  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
50 V to 400 V  
500 V to 600 V  
TC = 100 °C  
8.3 ms Single Half Sine-Wave  
100  
10  
0
0.1  
1
10  
100  
1
10  
100  
Number of Cycles at 60 Hz  
Reverse Voltage (V)  
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current  
Per Diode  
Fig. 5 - Typical Junction Capacitance Per Diode  
100  
TJ = 125 °C  
10  
TJ = 25 °C  
Pulse Width = 300 μs  
1 % Duty Cycle  
1
50 V to 200 V  
300 V to 400 V  
500 V to 600 V  
0.1  
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
Instantaneous Forward Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode  
Revision: 15-Nov-17  
Document Number: 88596  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
FEP16xT, FEPF16xT, FEPB16xT  
www.vishay.com  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
ITO-220AB  
TO-220AB  
0.404 (10.26)  
0.190 (4.83)  
0.415 (10.54) max.  
0.384 (9.75)  
0.170 (4.32)  
0.185 (4.70)  
0.154 (3.91)  
0.148 (3.74)  
0.370 (9.40)  
0.360 (9.14)  
0.175 (4.44)  
0.055 (1.39)  
0.045 (1.14)  
0.076 (1.93) REF.  
0.076 (1.93) REF.  
0.110 (2.79)  
0.100 (2.54)  
7° REF.  
0.113 (2.87)  
0.103 (2.62)  
45° REF.  
0.140 (3.56) DIA.  
0.125 (3.17) DIA.  
0.135 (3.43) DIA.  
0.122 (3.08) DIA.  
0.145 (3.68)  
0.135 (3.43)  
0.671 (17.04)  
0.651 (16.54)  
0.600 (15.24)  
0.580 (14.73)  
7° REF.  
PIN  
0.603 (15.32)  
0.573 (14.55)  
0.635 (16.13)  
0.625 (15.87)  
0.350 (8.89)  
0.330 (8.38)  
PIN  
2 3  
0.350 (8.89)  
0.330 (8.38)  
1
2
3
1
7° REF.  
0.191 (4.85)  
0.171 (4.35)  
0.160 (4.06)  
0.140 (3.56)  
1.148 (29.16)  
1.118 (28.40)  
0.560 (14.22)  
0.530 (13.46)  
0.110 (2.79)  
0.100 (2.54)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.045 (1.14)  
0.057 (1.45)  
0.045 (1.14)  
0.057 (1.45)  
0.045 (1.14)  
0.560 (14.22)  
0.530 (13.46)  
0.105 (2.67)  
0.095 (2.41)  
0.035 (0.89)  
0.025 (0.64)  
0.035 (0.90)  
0.028 (0.70)  
0.028 (0.71)  
0.020 (0.51)  
0.025 (0.64)  
0.015 (0.38)  
0.104 (2.65)  
0.096 (2.45)  
0.022 (0.56)  
0.014 (0.36)  
0.105 (2.67)  
0.095 (2.41)  
0.205 (5.20)  
0.195 (4.95)  
0.205 (5.21)  
0.195 (4.95)  
D2PAK (TO-263AB)  
Mounting Pad Layout  
0.411 (10.45)  
0.190 (4.83)  
0.160 (4.06)  
0.42 (10.66) min.  
0.380 (9.65)  
0.245 (6.22)  
MIN.  
0.055 (1.40)  
0.045 (1.14)  
K
0.33 (8.38) min.  
0.055 (1.40)  
0.047 (1.19)  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
0.670 (17.02)  
0.591 (15.00)  
1
K
2
0.591 (15.00)  
0 to 0.01 (0 to 0.254)  
0.110 (2.79)  
0.090 (2.29)  
0.021 (0.53)  
0.014 (0.36)  
0.15 (3.81) min.  
0.037 (0.940)  
0.027 (0.686)  
0.08 (2.032) MIN.  
0.105 (2.67)  
0.095 (2.41)  
0.140 (3.56)  
0.110 (2.79)  
0.105 (2.67)  
0.095 (2.41)  
0.205 (5.20)  
0.195 (4.95)  
Revision: 15-Nov-17  
Document Number: 88596  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 08-Feb-17  
Document Number: 91000  
1

相关型号:

FEPB16CT-E3/81

DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY

FEPB16CT-G

Rectifier Diode, 1 Phase, 2 Element, 16A, 150V V(RRM), Silicon, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
SENSITRON

FEPB16CT-GT3

Rectifier Diode, 1 Phase, 2 Element, 16A, 150V V(RRM), Silicon, TO-263AB, PLASTIC, TO-263, D2PAK-3
SENSITRON

FEPB16CT-HE3/81

DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY

FEPB16CT-T3

Rectifier Diode, 1 Phase, 2 Element, 16A, 150V V(RRM), Silicon, TO-263AB, PLASTIC, TO-263, D2PAK-3
SENSITRON

FEPB16CT/31

Rectifier Diode, 16A, 150V V(RRM)
VISHAY

FEPB16CT/45

Rectifier Diode, 16A, 150V V(RRM)
VISHAY

FEPB16CTHE3/45

DIODE ARRAY GP 150V 8A TO263AB
VISHAY

FEPB16CTHE3/81

DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY

FEPB16CTN-G

Rectifier Diode, 1 Phase, 2 Element, 16A, 150V V(RRM), Silicon, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
SENSITRON

FEPB16DT

FAST EFFICIENT PLASTIC RECTIFIER
VISHAY

FEPB16DT-E3/45

DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY