FEPB16CT-E3/45 [VISHAY]
DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;型号: | FEPB16CT-E3/45 |
厂家: | VISHAY |
描述: | DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 功效 二极管 |
文件: | 总5页 (文件大小:154K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FEP16xT, FEPF16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Plastic Rectifier
FEATURES
TO-220AB
ITO-220AB
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
3
3
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
2
1
1
FEP16xT
FEPF16xT
PIN 1
PIN 2
CASE
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
PIN 1
PIN 2
PIN 3
PIN 3
• AEC-Q101 qualified
TO-263AB
(for ITO-220AB and TO-263AB package)
K
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
TYPICAL APPLICATIONS
1
FEPB16xT
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
2 x 8.0 A
Base P/N-E3
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
-
RoHS-compliant, commercial grade
VRRM
IFSM
trr
50 V to 600 V
200 A, 125 A
35 ns, 50 ns
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
VF
0.95 V, 1.30 V, 1.50 V
150 °C
TJ max.
meets JESD 201 class 2 whisker test
TO-220AB, ITO-220AB,
TO-263AB
Package
Polarity: as marked
Mounting Torque: 10 in-lbs max.
Diode variations
Common cathode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL FEP16AT FEP16BT FEP16CT FEP16DT FEP16FT FEP16GT FEP16HT FEP16JT UNIT
Maximum repetitive peak reverse
voltage
VRRM
50
100
150
200
300
400
500
600
V
Maximum RMS voltage
VRMS
VDC
35
50
70
105
150
140
200
210
300
280
400
350
500
420
600
V
V
Maximum DC blocking voltage
100
Maximum average forward
rectified current at TC = 100 °C
IF(AV)
16
A
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load per diode
IFSM
200
125
A
Operating storage and temperature
range
TJ, TSTG
VAC
-55 to +150
1500
°C
V
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Revision: 15-Nov-17
Document Number: 88596
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FEP16xT, FEPF16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
FEP
FEP
FEP
FEP
FEP
FEP
FEP
FEP
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
Maximum instantaneous
forward voltage per diode
(1)
8.0 A
VF
0.95
35
1.30
1.50
V
Maximum DC reverse
current per diode at rated DC
blocking voltage
T
C = 25 °C
TC = 100 °C
IF = 0.5 A, IR = 1.0 A,
10
IR
μA
500
Maximum reverse recovery
time per diode
trr
50
ns
I
rr = 0.25 A
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
85
60
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
FEPF
FEPB
2.2
UNIT
Typical thermal resistance from junction to case per diode
RJC
2.2
3.1
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
FEP16JT-E3/45
1.85
1.97
1.35
1.35
1.97
1.35
1.35
45
45
45
81
45
45
81
FEPF16JT-E3/45
50/tube
Tube
FEPB16JT-E3/45
FEPB16JT-E3/81
FEPF16JTHE3/45 (1)
FEPB16JTHE3/45 (1)
FEPB16JTHE3/81 (1)
50/tube
Tube
800/reel
Tape and reel
Tube
50/tube
50/tube
Tube
800/reel
Tape and reel
Note
(1)
AEC-Q101 qualified, available in ITO-220AB and TO-263AB package
Revision: 15-Nov-17
Document Number: 88596
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FEP16xT, FEPF16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
16
12
8
100
10
TJ = 125 °C
50 V to 400 V
500 V to 600 V
Resistive or Inductive Load
1
TJ = 100 °C
TJ = 25 °C
0.1
4
0
0.01
0
50
100
150
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
300
250
200
150
100
50
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
50 V to 400 V
500 V to 600 V
TC = 100 °C
8.3 ms Single Half Sine-Wave
100
10
0
0.1
1
10
100
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
TJ = 125 °C
10
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
1
50 V to 200 V
300 V to 400 V
500 V to 600 V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 15-Nov-17
Document Number: 88596
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FEP16xT, FEPF16xT, FEPB16xT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
TO-220AB
0.404 (10.26)
0.190 (4.83)
0.415 (10.54) max.
0.384 (9.75)
0.170 (4.32)
0.185 (4.70)
0.154 (3.91)
0.148 (3.74)
0.370 (9.40)
0.360 (9.14)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.076 (1.93) REF.
0.076 (1.93) REF.
0.110 (2.79)
0.100 (2.54)
7° REF.
0.113 (2.87)
0.103 (2.62)
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.145 (3.68)
0.135 (3.43)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
PIN
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
PIN
2 3
0.350 (8.89)
0.330 (8.38)
1
2
3
1
7° REF.
0.191 (4.85)
0.171 (4.35)
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.035 (0.90)
0.028 (0.70)
0.028 (0.71)
0.020 (0.51)
0.025 (0.64)
0.015 (0.38)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.205 (5.21)
0.195 (4.95)
D2PAK (TO-263AB)
Mounting Pad Layout
0.411 (10.45)
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) min.
0.380 (9.65)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 15-Nov-17
Document Number: 88596
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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