FEPF16BT-HE3/45 [VISHAY]
DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode;
| 型号： | FEPF16BT-HE3/45 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode |
| 文件： | 总5页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
TO-220AB
ITO-220AB
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• AEC-Q101 qualified
3
3
2
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
2
1
1
FEP16xT
FEPF16xT
PIN 1
PIN 2
CASE
PIN 1
• Solder Dip 260 °C, 40 seconds (for TO-220AB &
ITO-220AB package)
PIN 2
PIN 3
PIN 3
TO-263AB
K
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
2
For use in high frequency rectifier of switching mode
power supplies, inverters, free-wheeling diodes,
dc-to-dc converters, and other power switching
application.
1
FEPB16xT
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
8.0 A x 2
50 V to 600 V
200 A, 125 A
35 ns, 50 ns
VF
0.95 V, 1.30 V, 1.50 V
150 °C
Polarity: As marked
Tj max.
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
FEP
16AT
FEP
16BT
FEP
16CT
FEP
16DT
FEP
16FT
FEP
16GT
FEP
16HT
FEP
16JT
PARAMETER
SYMBOL
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
Maximum DC blocking voltage
100
Maximum average forward
rectified current at TC = 100 °C
IF(AV)
16
A
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load per diode
IFSM
200
125
A
Operating storage and temperature range
TJ, TSTG
VAC
- 55 to +150
1500
°C
V
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
Document Number 88596
22-Aug-06
www.vishay.com
1
FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
FEP
FEP
FEP
FEP
FEP
FEP
FEP
FEP
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
Maximum instantaneous
at 8.0 A
VF
0.95
1.30
1.50
V
forward voltage per diode (1)
Maximum DCreverse current
per diode at rated DC
blocking voltage
T
T
C = 25 °C
C = 100 °C
10
500
IR
µA
Maximum reverse recovery
time per diode
at IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
trr
35
50
ns
I
Typical junction capacitance
per diode
at 4.0 V, 1 MHz
CJ
85
60
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
FEP
FEPF
FEPB
2.2
UNIT
Typical thermal resistance from junction to case per diode
RθJC
2.2
3.1
°C/W
ORDERING INFORMATION
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/Tube
DELIVERY MODE
Tube
FEP16JT-E3/45
1.85
1.97
1.35
1.35
45
45
45
81
FEPF16JT-E3/45
FEPB16JT-E3/45
FEPB16JT-E3/81
50/Tube
Tube
50/Tube
Tube
800/Reel
Tape Reel
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2
Document Number 88596
22-Aug-06
FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
20
100
50 - 400 V
500 - 600 V
Tj = 125 °C
Resistive or Inductive Load
16
12
8
10
Tj = 100 °C
1
Tj = 25 °C
0.1
4
0
0.01
0
50
100
150
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Characteristics Per Diode
300
1000
T
j
= 125 °C
f = 1.0 MHz
sig = 50 mVp-p
50 - 400 V
500 - 600 V
TC = 100 °C
8.3 ms Single Half Sine-Wave
250
200
150
100
50
V
100
0
10
0.1
1
10
100
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 5. Typical Junction Capacitance Per Diode
40
Tj = 125 °C
10
Tj = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
50 - 400 V
300 - 400 V
500 - 600 V
0.1
0.2 0.4 0.6
0.8 1.0 1.2 1.4
1.6 1.8
2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Document Number 88596
22-Aug-06
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3
FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
See note
0.404(10.26)
0.384(9.75)
0.190(4.83)
0.170(4.32)
0.415 (10.54) MAX.
See note
0.076Ref.
(1.93)ref.
(4.70)
0.185
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.110(2.79)
0.100(2.54)
0.370 (9.40)
0.360 (9.14)
0.076Ref.
(1.93)
Ref.
7°Ref.
(1.39)
0.045 (1.14)
0.055
45°Ref.
0.113 (2.87)
0.103 (2.62)
0.140(3.56)DIA.
0.125(3.17)DIA.
0.135(3.43)DIA.
0.122(3.08)DIA.
0.671(17.04)
0.651(16.54)
0.600(15.24)
0.580(14.73)
0.145 (3.68)
0.135 (3.43)
PIN
7°Ref.
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
0.350(8.89)
0.330(8.38)
0.350 (8.89)
0.330 (8.38)
3
1
2
PIN
2
3
1
0.191(4.85)
0.171(4.35)
7°Ref.
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.560(14.22)
0.530(13.46)
0.110 (2.79)
0.100 (2.54)
0.057(1.45)
0.045(1.14)
0.057 (1.45)
0.045 (1.14)
0.080(2.03)
0.065(1.65)
0.110(2.79)
0.100(2.54)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035(0.89)
0.025(0.64)
0.035 (0.90)
0.028 (0.70)
0.025(0.64)
0.015(0.38)
0.105(2.67)
0.095(2.41)
0.104 (2.65)
0.096 (2.45)
0.028 (0.71)
0.020(0.51)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.205(5.21)
0.195(4.95)
Note:Copperexposure is allowablefor 0.005(0.13)Max. from the body
TO-263AB
0.41 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
0.245 (6.22)
MIN
(10.66)
K
0.33
(8.38)
0.055 (1.40)
0.047 (1.19)
MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
0.591(15.00)
2
0.670 (17.02)
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15
(3.81)
0.037 (0.940)
0.027 (0.686)
MIN.
0.08
MIN.
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
(2.032)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
(0.095) (2.41)
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Document Number 88596
22-Aug-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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