FESB16BTHE3_A/P [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 16A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2;
| 型号： | FESB16BTHE3_A/P |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 16A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2 |
| 文件： | 总5页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FES16xT, FESF16xT, FESB16xT
www.vishay.com
Vishay General Semiconductor
Ultrafast Plastic Rectifier
FEATURES
TO-220AC
ITO-220AC
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D2PAK (TO-263AB) package)
1
1
FES16xT Series
FESF16xT Series
PIN 1
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AC and ITO-220AC package)
PIN 1
CASE
PIN 2
PIN 2
• AEC-Q101 qualified available
D2PAK (TO-263AB)
- Automotive ordering code: base P/NHE3
K
(for ITO-220AC and D2PAK (TO-263AB package))
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1
FESB16xT Series
PIN 1
K
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS AVAILABLE
3
D
3D Models
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,....)
PRIMARY CHARACTERISTICS
IF(AV)
16 A
VRRM
50 V to 600 V
250 A
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
IFSM
trr
VF
35 ns, 50 ns
0.975 V, 1.30 V, 1.50 V
150 °C
meets JESD 201 class 2 whisker test
TJ max.
Polarity: as marked
Package
TO-220AC, ITO-220AC, D2PAK (TO-263AB)
Mounting Torque: 10 in-lbs max.
Circuit configurations
Single
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
FES
FES
FES
FES
FES
16FT
FES
FES
FES
16JT
PARAMETER
SYMBOL
UNIT
16AT 16BT 16CT 16DT
16GT 16HT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
Maximum DC blocking voltage
100
Maximum average forward
rectified current at TC = 100 °C
IF(AV)
16
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
TJ, TSTG
VAC
250
A
°C
V
Operating storage and temperature range
-65 to +150
1500
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
Revision: 28-Jun-2019
Document Number: 88599
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FES16xT, FESF16xT, FESB16xT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
FES
FES
FES
FES
FES
FES
FES
FES
PARAMETER
TEST CONDITIONS SYMBOL
UNIT
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
Maximum instantaneous forward
voltage
(1)
16 A
VF
0.975
35
1.30
1.50
145
V
TC = 25 °C
10
Maximum DC reverse current at
rated DC blocking voltage
IR
μA
T
C = 100 °C
IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
500
Maximum reverse recovery time
Typical junction capacitance
trr
50
ns
I
4.0 V, 1 MHz
CJ
175
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FES
FESF
FESB
1.2
UNIT
Typical thermal resistance, junction to case
RJC
1.2
1.7
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
ITO-220AC
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
FES16JT-E3/45
1.78
1.80
1.33
1.33
1.80
1.33
1.33
45
45
45
81
P
FESF16JT-E3/45
50/tube
Tube
FESB16JT-E3/45
50/tube
Tube
FESB16JT-E3/81
800/reel
Tape and reel
Tube
FESF16JTHE3_A/P (1)
FESB16JTHE3_A/P (1)
FESB16JTHE3_A/I (1)
50/tube
P
50/tube
Tube
I
800/reel
Tape and reel
Note
(1)
AEC-Q101 qualified, available in ITO-220AC and TO-263AB package
Revision: 28-Jun-2019
Document Number: 88599
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FES16xT, FESF16xT, FESB16xT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
16
12
8
1000
100
10
50 V to 200 V
300 V to 400 V
Resistive or Inductive Load
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
1
4
0
0.1
0
50
100
150
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
300
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ max.
8.3 ms Single Half Sine-Wave
(JEDEC Method)
250
200
150
100
50
100
50 V to 400 V
500 V to 600 V
10
0
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
TJ = 125 °C
10
TJ = 25 °C
1
50 V to 200 V
300 V to 400 V
500 V to 600 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 28-Jun-2019
Document Number: 88599
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FES16xT, FESF16xT, FESB16xT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AC
0.415 (10.54) MAX.
0.154 (3.91) DIA.
0.370 (9.40)
0.185 (4.70)
0.148 (3.74) DIA.
0.175 (4.44)
0.055 (1.39)
0.360 (9.14)
0.113 (2.87)
0.103 (2.62)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.635 (16.13)
0.625 (15.87)
PIN
0.330 (8.38)
1.148 (29.16)
1
2
1.118 (28.40)
0.110 (2.79)
0.160 (4.06)
0.140 (3.56)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.530 (13.46)
PIN 1
PIN 2
0.045 (1.14)
CASE
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
ITO-220AC
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
45° REF.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
PIN
1
2
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.025 (0.64)
0.015 (0.38)
0.028 (0.71)
0.020 (0.51)
0.195 (4.95)
D2PAK (TO-263AB)
Mounting Pad Layout
0.411 (10.45)
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) min.
0.380 (9.65)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 28-Jun-2019
Document Number: 88599
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
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