FESB8FT/81 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, TO-263AB,;
| 型号： | FESB8FT/81 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, TO-263AB, 二极管 |
| 文件： | 总4页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FES8JT, FESF8JT, FESB8JT Series
Vishay Semiconductors
formerly General Semiconductor
Ultrafast Plastic Rectifiers
Reverse Voltage 50 to 600V
Forward Current 8.0 A
Reverse Recovery Time 35 to 50ns
ITO-220AC (FESF8JT)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
TO-220AC (FES8JT)
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
DIA.
DIA.
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.676 (17.2)
0.646 (16.4)
DIA.
0.600 (15.5)
0.580 (14.5)
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.113 (2.87)
0.103 (2.62)
PIN
0.145 (3.68)
0.135 (3.43)
1
2
0.191 (4.85)
0.171 (4.35)
0.603 (15.32)
0.573 (14.55)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
PIN 1
PIN
1
2
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
PIN 2
0.110 (2.79)
0.100 (2.54)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.560 (14.22)
0.205 (5.20)
0.195 (4.95)
PIN 1
PIN 2
0.530 (13.46)
CASE
0.105 (2.67)
TO-263AB (FESB8JT)
0.037 (0.94)
0.027 (0.68)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.190 (4.83)
0.160 (4.06)
0.411 (10.45)
0.380 (9.65)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.245 (6.22)
MIN
Mounting Pad Layout TO-263AB
K
0.42
(10.66)
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
Dimensions in inches
and (millimeters)
0.33
(8.38)
K
1
2
0-0.01 (0-0.254)
0.63
(17.02)
0.110 (2.79)
0.090 (2.29)
0.027 (0.686)
0.037 (0.940)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
K - HEATSINK
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.08
0.205 (5.20)
0.195 (4.95)
(2.032)
0.12
(3.05)
0.24
(6.096)
Mechanical Data
Features
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Glass passivated chip junction
• Low leakage, high voltage
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
• High surge current capability
250°C, 0.16” (4.06mm) from case for 10 seconds
• Superfast recovery time, for high efficiency
Polarity: As marked Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
Document Number 88600
02-Apr-03
www.vishay.com
1
FES8JT, FESF8JT, FESB8JT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings Ratings at 25°C ambient temperature unless otherwise specified.
FES
8AT
FES
8BT
FES
8CT
FES
8DT
FES
8FT
FES
8GT
FES
8HT
FES
8JT
Parameter
Symbol
VRRM
VRMS
VDC
Unit
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
500
350
600
420
600
V
Maximum DC blocking voltage
100
400 500
V
Maximum average forward rectified current
at TC=100°C
IF(AV)
8.0
A
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at TC=100°C
IFSM
TJ, TSTG
VISOL
200
125
A
°C
V
Operating storage and temperature range
–55 to +150
4500(1)
3500(2)
1500(3)
RMS Isolation voltage (FESF type only) from
terminals to heatsink with t=1.0 second, RH≤30%
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
FES
8AT
FES
8BT
FES
8CT
FES
8DT
FES
8FT
FES
8GT
FES
8HT
FES
8JT
Parameter
Symbol
Unit
Maximum instantaneous forward voltage @ 8.0A(4)
VF
0.95
1.30
1.50
V
Maximum DC reverse current
at rated DC blocking voltage
TC=25°C
TC=100°C
10
500
IR
µA
Maximum reverse recovery time at
IF=0.5A, IR=1.0A, Irr=0.25A
trr
35
50
ns
Typical junction capacitance at 4V, 1MHz
CJ
85
50
pF
Thermal Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
FES
FESF
FESB
Unit
Typical thermal resistance from junction to case
RΘJC
2.2
5.0
2.2
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
FES8AT thru FES8JT
FESF8AT thru FESF8JT
TO-220AC
ITO-220AC
45
45
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
FESB8AT thru FESB8JT
TO-263AB
www.vishay.com
2
Document Number 88600
02-Apr-03
FES8JT, FESF8JT, FESB8JT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Maximum Forward Current
Fig. 2 – Maximum Non-Repetitive Peak
Derating Curve
Forward Surge Current
150
10
Resistive or Inductive Load
T
= 100°C
C
8.3ms Single Half Sine-Wave
(JEDEC Method)
125
100
75
50
25
0
8.0
Heatsink, Case Temperature, T
C
6.0
Free Air, Ambient Temperature, T
A
4.0
2.0
0
1
10
100
0
50
100
150
Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse Leakage
Characteristics
100
10
1
40
10
Pulse width = 300µs
1% Duty Cycle
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 100°C
1.0
0.1
50 - 200V
500 - 600V
0.1
50 - 200V
300 - 400V
500 - 600V
TJ = 25°C
0.01
0
20
40
60
80
100
0.2
0.6
1.0
1.4
1.8
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
1,000
T
= 25°C
J
f = 1.0 MHz
Vsig = 50mVp-p
100
50 - 200V
500 - 600V
10
0.1
1
10
100
Reverse Voltage (V)
Document Number 88600
02-Apr-03
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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