FGP20B-E3 [VISHAY]
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Rectifier Diode;
| 型号： | FGP20B-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Rectifier Diode |
| 文件： | 总3页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FGP20B thru FGP20D
Vishay Semiconductors
Glass Passivated Ultrafast Rectifier
®
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
trr
2.0 A
100 V to 200 V
50 A
35 ns
*
d
VF
0.95 V
e
t
n
e
t
IR
2.0 µA
a
P
DO-204AC (DO-15)
* Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
Tj max.
175 °C
Features
Mechanical Data
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Polarity: Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
VRRM
FGP20B
100
FGP20C
150
FGP20D
200
Unit
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRMS
VDC
70
105
150
2.0
140
200
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TL = 75 °C
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
Document Number 88877
10-Aug-05
www.vishay.com
1
FGP20B thru FGP20D
Vishay Semiconductors
Electrical Characteristics
TA = 25 °C unless otherwise specified
Parameter
Test condition
at 2.0 A
Symbol
VF
FGP20B
FGP20C
0.95
FGP20D
Unit
V
Maximum instantaneous forward
voltage
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C
TA = 100 °C
IR
trr
2.0
50
µA
ns
pF
Maximum reverse recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
35
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
45
Thermal Characteristics
TA = 25 °C unless otherwise specified
Parameter
Typical thermal resistance (1, 2)
Symbol
RθJA
RθJL
FGP20B
FGP20C
FGP20D
Unit
60
20
°C/W
Notes:
(1) Thermal resistance from junction to ambient 0.375" (9.5 mm) lead length mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads.
(2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsinks
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
3.0
60
50
40
30
20
10
0
TJ = TJ max.
8.3 ms Single Half Sine-Wave
2.0
1.0
0
P.C.B. with 12 x 12 mm
Copper Pads
1
10
100
0
25
50
75
100
125
150
175
Lead Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88877
10-Aug-05
2
FGP20B thru FGP20D
Vishay Semiconductors
100
1000
Tj = 175 °C
10
1
Tj = 150 °C
100
10
Tj = 125 °C
0.1
TJ = 25 °C
µs
Pulse Width = 300
Tj = 25 °C
1% Duty Cycle
1
0.01
0.4
0.6
0.8
1
1.2
1.4
0.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
Tj = 175 °C
10
1
Tj = 150 °C
Tj = 125 °C
0.1
0.01
Tj = 25 °C
0.001
0
20
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
40
60
80
100
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Document Number 88877
10-Aug-05
www.vishay.com
3
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