G1D-E3/54 [VISHAY]
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS, G-1, 2 PIN;
| 型号： | G1D-E3/54 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS, G-1, 2 PIN |
| 文件： | 总6页 (文件大小：343K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
G1A / B / D / G / J / K / M
VISHAY
Vishay Semiconductors
Standard Sinterglass Diode
Features
• High temperature metallurgically bonded con-
structed rectifiers
• Cavity-free glass passivated junction in DO-
204AP package
• Hermetically sealed package
• 1.0 ampere operation at Tamb = 100 °C with no
thermal runaway
17031
Mechanical Data
Case: DO-204AP Sintered glass case
Terminals: Solder plated axial leads, solderable per Mounting Position: Any
MIL-STD-750, Method 2026
Weight: approx. 560 mg
Polarity: Color band denotes cathode end
Parts Table
Part
Type differentiation
= 50 V
Package
G1A
G1B
G1D
G1G
G1J
V
V
V
V
V
V
V
DO-204AP(G-1)
RRM
RRM
RRM
RRM
RRM
RRM
RRM
= 100 V
= 200 V
= 400 V
= 600 V
= 800 V
= 1000 V
DO-204AP(G-1)
DO-204AP(G-1)
DO-204AP(G-1)
DO-204AP(G-1)
DO-204AP(G-1)
DO-204AP(G-1)
G1K
G1M
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
Parameter
amb
Test condition
Part
G1A
Symbol
Value
50
Unit
V
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
V
= V
R
RRM
G1B
G1D
G1G
G1J
V
V
V
V
V
V
= V
= V
= V
= V
= V
= V
100
200
400
600
800
1000
1.0
V
V
V
V
V
V
A
R
R
R
R
R
R
RRM
RRM
RRM
RRM
RRM
RRM
G1K
G1M
Maximum average forward
rectified current
0.375 " (9.5 mm) lead length at
I
F(AV)
T
= 100 °C
amb
Document Number 86084
Rev. 1.3, 11-Aug-04
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1
G1A / B / D / G / J / K / M
Vishay Semiconductors
VISHAY
Parameter
Test condition
Part
Symbol
Value
50
Unit
A
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC Method)
I
FSM
Maximum full load reverse
current
full cycle average 0.375 "
(9.5 mm) lead length at
I
200
µA
R(AV)
T
= 100 °C
amb
Operating junction and storage
temperature range
T , T
- 55 to + 175
°C
J
STG
Maximum Thermal Resistance
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
55
Unit
K/W
1)
R
Typical thermal resistance
θJL
1)
Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Part
G1A
Symbol
Min
Typ.
Max
Unit
V
Maximum instantaneous
I
= 1 A
V
1.2
F
F
forward voltage
G1B
G1D
G1G
G1J
V
V
V
V
V
V
I
1.2
1.1
1.1
1.1
1.1
1.1
2.0
100
V
V
F
F
F
F
F
F
V
V
G1K
G1M
V
V
Maximum reverse current
V
V
= V
, T
= 25 °C
µA
µA
µs
pF
R
R
RRM amb
R
= V
, T
= 150 °C
I
R
RRM amb
Typical reverse recovery time
Typical junction capacitance
I = 0.5 A, I = 1.0 A, I = 0.25 A
t
rr
1.5
15
F
R
rr
V
= 4.0 V, f = 1 MHz
C
j
R
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.0
50
TJ = TJ max.
8.3ms Single Half Sine-W ave
(JEDEC Method)
60HZ Resistive or
Inductive Load
0.8
40
Capacitance
Load
0.6
0.4
0.2
0
30
20
10
0
Ipk/I = 5.0
AV
10
20
0.375" (9.5mm)
Lead Length
0
25
50
75
100
125
150
175
1
1
0
100
Number of Cycles at 60HZ
gg1a_01
Ambient T emperature (°C)
gg1a_02
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 86084
Rev. 1.3, 11-Aug-04
G1A / B / D / G / J / K / M
VISHAY
Vishay Semiconductors
10
TJ = 150°C
1
TJ = 25°C
0.1
Pulse Width = 300µs
1% Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
gg1a_03
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10
TJ = 125°C
1
TJ = 75°C
0.1
TJ = 25°C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
gg1a_04
Figure 4. Typical Reverse Characteristics
30
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
10
1
1
1
0
100
Reverse Voltage (V)
gg1a_05
Figure 5. Typical Junction Capacitance
Document Number 86084
Rev. 1.3, 11-Aug-04
www.vishay.com
3
G1A / B / D / G / J / K / M
Vishay Semiconductors
VISHAY
Package Dimensions in mm (Inches)
0.86 (0.034)
0.71 (0.028)
DIA.
25.4 (1.0)
MIN.
6.1 (0.240)
MAX.
3.8 (0.150)
2.5 (0.100)
DIA.
25.4 (1.0)
MIN.
17030
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Document Number 86084
Rev. 1.3, 11-Aug-04
G1A / B / D / G / J / K / M
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86084
Rev. 1.3, 11-Aug-04
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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