G3SBA60E3 [VISHAY]
DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode;
| 型号： | G3SBA60E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode |
| 文件： | 总3页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
G3SBA20, G3SBA60 & G3SBA80
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
IR
4 A
200 V, 600 V & 800 V
Case Style GBU
80 A
5 µA
VF
1.0 V
150 °C
Tj max.
Features
• UL Recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 V
• Solder Dip 260 °C, 40 seconds
RMS
Typical Applications
Mechanical Data
General purpose use in ac-to-dc bridge full wave rec-
tification for Monitor, TV, Printer, Switching Mode
Power Supply, Adapter, Audio equipment, and Home
Appliances applications.
Case: GBU
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Maximum Ratings
TA = 25 °C, unless otherwise specified
Parameter
Symbol
G3SBA20
200
G3SBA60
600
G3SBA80
800
Unit
V
Maximum repetive peak reverse voltage
VRRM
VRWM
VDC
Maximum RMS voltage
140
200
420
600
560
800
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified
T
C = 100 °C (1)
TA = 25 °C (2)
IF(AV)
4.0
2.3
output current at
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
80
A
I2t
A2sec
°C
Rating for fusing (t < 8.3 ms)
27
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Notes:
(1) Unit case mounted on Al plate heatsink
(2) Units mounted on P.C.B with 0.5 x 0.5” (12 x 12 mm) copper pads and 0.375” (9.5 mm) lead length
Document Number 88606
29-Jul-05
www.vishay.com
1
G3SBA20, G3SBA60 & G3SBA80
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C, unless otherwise specified
Parameter
Test condition
at 2.0 A
Symbol G3SBA20 G3SBA60 G3SBA80
Unit
V
Maximum instantaneous forward voltage
per leg
VF
1.00
Maximum DC reverse current at rated DC
blocking voltage per leg
TJ = 25 °C
IR
5.0
400
µA
TJ = 125 °C
Thermal Characteristics
TA = 25 °C, unless otherwise specified
Parameter
Symbol
G3SBA20
G3SBA60
G3SBA80
Unit
(2)
Typical thermal resistance per leg
26
°C/W
RθJA
(1)
5.0
RθJC
Note:
(1) Unit case mounted on Al plate heatsink
(2) Units mounted on P.C.B with 0.5 x 0.5” (12 x 12 mm) Copper pads and 0.375” (9.5 mm) lead length
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
4
100
10
1
Heatsink Mounting, T
C
3
2
P.C.B. Mounting, T
A
1
0
0.1
0.01
0
25
50
75
100
125
150
0.4
0.8
1.2
1.6
2
2.4
Instantaneous Forward Voltage (V)
Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 3. Typical Instantaneous Forward Characteristics Per Leg
100
100
T
= 125°C
A
80
60
40
10
1
0.1
20
1.0 Cycle
T
= 25°C
A
0.01
0
0
20
40
60
80
100
1
100
Percent of Rated Peak Reverse Voltage (%)
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Leg
Figure 4. Typical Reverse Leakage Characteristics Per Leg
www.vishay.com
2
Document Number 88606
29-Jul-05
G3SBA20, G3SBA60 & G3SBA80
Vishay General Semiconductor
100
100
10
10
1
0.1
1
0.01
0.1
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t, Heating Time (sec.)
Figure 5. Typical Junction Capacitance Per Leg
Figure 6. Typical Transient Thermal Impedance
Package Dimensions in inches (millimeters)
0.140 (3.56)
0.130 (3.30)
0.880 (22.3)
0.860 (21.8)
0.020 R (TYP.)
o
0.125 (3.2) x 45
CHAMFER
o
9
TYP
0.160 (4.1)
0.140 (3.5)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.075
0.085 (2.16)
0.065 (1.65)
(2.03)
(1.52)
0.080
0.060
(1.9)
R
o
5
TYP
0.085 (2.16)
0.075 (1.90)
0.710 (18.0)
0.690 (17.5)
0.100 (2.54)
0.085 (2.16)
0.043 (1.10)
0.035 (0.90)
0.022 (0.56)
0.018 (0.46)
(4.83)
(5.33)
0.080 (2.03)
0.065 (1.65)
0.190
0.210
Polarity shown on front side of case, positive lead by beveled corner
Document Number 88606
29-Jul-05
www.vishay.com
3
相关型号：
G3SBA60E3-E3
DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode
VISHAY
G3SBA80-E3
DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode
VISHAY
G3SBA80-E3/22
Bridge Rectifier Diode, 1 Phase, 2.3A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBU, 4 PIN
VISHAY
G3SBA80/1-E3
DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode
VISHAY
G3SBA80/72
Bridge Rectifier Diode, 1 Phase, 2.3A, 800V V(RRM), Silicon, PLASTIC, CASE GBU, 4 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明