G5SBA80-M3/51 [VISHAY]
Bridge Rectifier Diode,;型号: | G5SBA80-M3/51 |
厂家: | VISHAY |
描述: | Bridge Rectifier Diode, 二极管 |
文件: | 总4页 (文件大小:91K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
G5SBA20-M3, G5SBA60-M3, G5SBA80-M3
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
+
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
-
~
~
+
~
Case Style GBU
-
Case Style GBU
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, switching mode power supply,
adapter, audio equipment, and home appliances
applications.
PRIMARY CHARACTERISTICS
Package
GBU
6.0 A
MECHANICAL DATA
IF(AV)
Case: GBU
VRRM
IFSM
200 V, 600 V, 800 V
150 A
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
IR
5 μA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 3.0 A
TJ max.
1.05 V
150 °C
Diode variations
In-line
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
G5SBA20
200
G5SBA60
600
G5SBA80
800
UNIT
Maximum repetive peak reverse voltage
Maximum RMS voltage
VRRM
V
V
V
VRWM
VDC
140
420
560
Maximum DC blocking voltage
200
600
800
TC = 100 °C (1)
TA = 25 °C (2)
6.0
Maximum average forward rectified
output current at
IF(AV)
A
2.8
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
150
A
Rating for fusing (t < 8.3 ms)
I2t
93
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Notes
(1)
Unit case mounted on aluminum plate heatsink
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
(2)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
G5SBA20 G5SBA60 G5SBA80
UNIT
Maximum instantaneous forward voltage per diode 3.0 A
VF
1.05
5.0
V
TJ = 25 °C
TJ = 125 °C
Maximum DC reverse current at rated DC
blocking voltage per diode
IR
μA
300
Revision: 05-Aug-15
Document Number: 89305
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
G5SBA20-M3, G5SBA60-M3, G5SBA80-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
G5SBA20
G5SBA60
G5SBA80
UNIT
(2)
RJA
22
Typical thermal resistance
°C/W
(1)
RJC
3.4
Notes
(1)
Unit case mounted on aluminum plate heatsink
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
G5SBA60-M3/45
G5SBA60-M3/51
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
3.565
45
51
20
3.565
250
Paper tray
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
8.0
6.0
4.0
2.0
0
100
10
Heatsink Mounting, TC
P.C.B. Mounting, TA
1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.01
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
150
100
50
1000
TJ = TJ Max.
Single Sine-Wave
TJ = 125 °C
100
10
1
0.1
TJ = 25 °C
1.0 Cycle
0
0.01
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Current Per Diode
Revision: 05-Aug-15
Document Number: 89305
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
G5SBA20-M3, G5SBA60-M3, G5SBA80-M3
www.vishay.com
Vishay General Semiconductor
1000
100
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
0.01
0.1
1
10
100
0.1
1
10
100
t - Heating Time (s)
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type GBU
0.140 (3.56)
0.130 (3.30)
0.880 (22.3)
0.860 (21.8)
0.020 R (TYP.)
0.125 (3.2) x 45°
Chamfer
9° TYP.
0.310 (7.9)
0.290 (7.4)
0.160 (4.1)
0.140 (3.5)
0.740 (18.8)
0.720 (18.3)
0.075
(2.03)
(1.52)
0.080
0.060
0.085 (2.16)
0.065 (1.65)
(1.9)
R
.
5° TYP.
0.085 (2.16)
0.710 (18.0)
0.690 (17.5)
0.075 (1.90)
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
0.026 (0.66)
0.020 (0.51)
(4.83)
(5.33)
0.080 (2.03)
0.065 (1.65)
0.190
0.210
Polarity shown on front side of case, positive lead by beveled corner
Revision: 05-Aug-15
Document Number: 89305
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号:
G5SBA80/72
Bridge Rectifier Diode, 1 Phase, 2.8A, 800V V(RRM), Silicon, PLASTIC, CASE GBU, 4 PIN
VISHAY
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