GB200TS60NPBF [VISHAY]
INT-A-PAK 'Half-Bridge' (Ultrafast Speed IGBT), 209 A; INT -A- PAK “半桥” （超快速度IGBT ） ， 209
| 型号： | GB200TS60NPBF |
| 厂家： | 
VISHAY |
| 描述： | INT-A-PAK 'Half-Bridge' (Ultrafast Speed IGBT), 209 A |
| 文件： | 总9页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
INT-A-PAK
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
PRODUCT SUMMARY
VCES
600 V
209 A
2.6 V
BENEFITS
IC DC
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
VCE(on) at 200 A, 25 °C
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
600
209
142
400
400
178
121
20
UNITS
Collector to emitter voltage
VCES
V
TC = 25 °C
Continuous collector current
IC
TC = 80 °C
Pulsed collector current
ICM
ILM
A
Clamped inductive load current
TC = 25 °C
TC = 80 °C
Diode continuous forward current
Gate to emitter voltage
IF
VGE
PD
V
W
V
TC = 25 °C
781
438
2500
Maximum power dissipation
Isolation voltage
T
C = 80 °C
VISOL
Any terminal to case, t = 1 minute
Document Number: 94503
Revision: 04-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
-
UNITS
Collector to emitter breakdown voltage VBR(CES)
VGE = 0 V, IC = 500 μA
600
VGE = 15 V, IC = 100 A
-
-
-
-
3
-
-
-
-
-
-
-
1.95
2.6
2.1
VGE = 15 V, IC = 200 A
2.84
2.5
Collector to emitter voltage
VCE(on)
V
VGE = 15 V, IC = 100 A, TJ = 125 °C
VGE = 15 V, IC = 200 A, TJ = 125 °C
VCE = VGE, IC = 500 μA
2.28
3.14
4.2
3.48
6
Gate threshold voltage
VGE(th)
ICES
VGE = 0 V, VCE = 600 V
0.005
0.01
1.39
1.64
1.32
1.67
-
0.2
Collector to emitter leakage current
mA
V
GE = 0 V, VCE = 600 V, TJ = 150 °C
15
IC = 100 A
1.78
2.2
IC = 200 A
Diode forward voltage drop
VFM
V
IC = 100 A, TJ = 125 °C
IC = 200 A, TJ = 125 °C
1.69
2.30
200
Gate to emitter leakage current
IGES
VGE
=
20 V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
3.65
6.9
MAX.
UNITS
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Eon
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IC = 200 A, VCC = 360 V, VGE = 15 V,
Rg = 10 Ω, L = 200 μH, TJ = 25 °C
Eoff
Etot
Eon
10.55
3.8
mJ
Eoff
7.8
Etot
td(on)
tr
11.6
507
133
538
92
IC = 200 A, VCC = 360 V, VGE = 15 V,
Rg = 10 Ω, L = 200 μH, TJ = 125 °C
ns
Turn-off delay time
Fall time
td(off)
tf
TJ = 150 °C, IC = 400 A,
Rg = 27 Ω, VGE = 15 V to 0
Reverse bias safe operating area
Short circuit safe operating area
RBSOA
SCSOA
Fullsquare
-
TJ = 150 °C, VCC = 400 V, VP = 600 V,
Rg = 27 Ω, VGE = 15 V to 0
10
-
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
-
-
-
-
-
-
226
17
260
20
ns
A
IF = 50 A, dIF/dt = 200 A/μs,
VCC = 400 V, TJ = 25 °C
Qrr
trr
1900
290
25
2600
330
30
nC
ns
A
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
IF = 50 A, dIF/dt = 200 A/μs,
CC = 400 V, TJ = 125 °C
Irr
V
Qrr
3600
5000
nC
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2
For technical questions, contact: indmodules@vishay.com
Document Number: 94503
Revision: 04-May-10
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
-
MAX.
150
0.16
0.32
-
UNITS
Operating junction and storage temperature range
TJ, TStg
- 40
°C
IGBT
-
-
-
-
-
-
0.13
0.19
0.1
-
Junction to case per leg
Diode
RthJC
RthCS
°C/W
Case to sink per module
case to heatsink
Mounting torque
4
Nm
g
case to terminal 1, 2, 3
-
3
Weight
185
-
300
300
Vge = 18V
Vge = 15V
Vge = 12V
250
200
150
100
50
250
200
150
100
50
Vge = 9V
Tj = 125°C
Tj = 25°C
0
0
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
VGE (V)
VCE (V)
Fig. 1 - Typical IGBT Output Characteristics
TJ = 25 °C, tp = 500 μs
Fig. 3 - Typical Transfer Characteristics
V
CE = 20 V, tp = 500 μs
300
3.5
3
Vge = 18V
Vge = 15V
Vge = 12V
Ic = 200A
250
200
150
100
50
2.5
2
Ic = 100A
Ic = 50A
Vge = 9V
1.5
1
0
0
40
80
120
160
0
1
2
3
4
5
TJ, Junction Temperature (°C)
VCE (V)
Fig. 2 - Typical IGBT Output Characteristics
TJ = 125 °C, tp = 500 μs
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Document Number: 94503
Revision: 04-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
3
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
1000
200
150
100
td(off)
td(on)
tf
100
tr
50
Tj = 125°C
Tj = 25°C
10
0
40 60 80 100 120 140 160 180 200 220
IC (A)
0.0
0.5
1.0
VF (V)
1.5
2.0
Fig. 5 - Diode Forward Characteristics,
tp = 500 μs
Fig. 8 - Typical Switching Time vs. IC
TJ = 125 °C, L = 200 μH, VCC = 360 V,
Rg = 10 Ω, VGE = 15 V
13000
12000
11000
10000
9000
8000
7000
6000
5000
4000
3000
160
140
120
100
80
Eoff
Eon
DC
60
40
20
0
5
10 15 20 25 30 35 40 45 50
0
50
100
150
200
250
RG (Ω)
Maximum DC Collector Current (A)
Fig. 6 - Maximum Collector Current vs.
Case Temperature
Fig. 9 - Typical Energy Loss vs. Rg
TJ = 125 °C, L = 200 μH, VCC = 360 V,
CE = 200 A, VGE = 15 V
I
8000
7000
6000
5000
4000
3000
2000
1000
0
10000
1000
100
td(off)
Eoff
td(on)
tr
tf
Eon
10
50
100
150
200
0
10
20
30
40
50
RG (Ω)
IC (A)
Fig. 7 - Typical Energy Loss vs. IC
TJ = 125 °C, L = 200 μH, VCC = 360 V,
Fig. 10 - Typical Switching Time vs. Rg
TJ = 125 °C, L = 200 μH, VCC = 360 V,
Rg = 10 Ω, VGE = 15 V
ICE = 200 A, VGE = 15 V
www.vishay.com
4
For technical questions, contact: indmodules@vishay.com
Document Number: 94503
Revision: 04-May-10
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
100
90
80
70
60
50
40
30
20
10 ohm
27 ohm
47 ohm
5
10 15 20 25 30 35 40 45 50
40
80
120
160
200
IF (A)
RG (Ω)
Fig. 11 - Typical Diode Irr vs. IF
TJ = 125 °C
Fig. 14 - Typical Switching Losses vs. Gate Resistance
TJ = 125 °C, L = 200 μH, Rg = 10 Ω,
VCC = 360 V, VGE = 15 V
100
90
80
70
60
50
40
30
100
10
1
Ic = 200A
Ic = 100A
Ic = 50A
0
10
20
30
40
50
0
25
50
75
100
125
TJ -JunctionTemperature(°C)
RG (Ω)
Fig. 12 - Typical Diode Irr vs. Rg
TJ = 125 °C, IF = 200 A
Fig. 15 - Typical Switching Losses vs.
Junction Temperature;
L = 200 μH, Rg = 10 Ω, VCC = 360 V, VGE = 15 V
100
90
80
70
60
50
12
11
10
9
8
7
6
5
4
3
2
600 700 800 900 1000 1100 1200 1300
dIF / dt (A/μs)
40 60 80 100 120 140 160 180 200 220
IC (A)
Fig. 13 - Typical Diode Irr vs. dIF/dt
TJ = 125 °C, VCC = 360 V, IF = 200 A, VGE = 15 V
Fig. 16 - Typical Switching Losses vs.
Collector to Emitter Current;
TJ = 125 °C,Rg1 = 10 Ω, Rg2 = 0 Ω, VCC = 360 V, VGE = 15 V
Document Number: 94503
Revision: 04-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
5
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
1
D = 0.5
0.1
D = 0.2
D = 0.1
D = 0.05
0.01
D = 0.02
Notes:
D = 0.01
1. Duty Factor D = t1/t2
Single Pulse
2. Peak Tj = Pdm x ZthJC + Tc
(Thermal Response)
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t1 , Rectangular Pulse Duration (sec)
Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
1
0.1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
0.01
0.001
Notes:
D = 0.01
1. Duty Factor D = t1/t2
Single Pulse
(Thermal Response)
2. Peak Tj = Pdm x ZthJC + Tc
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 , Rectangular Pulse Duration (sec)
Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED®)
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For technical questions, contact: indmodules@vishay.com
Document Number: 94503
Revision: 04-May-10
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
ORDERING INFORMATION TABLE
Device code
G
B
200
T
S
60
N
PbF
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Insulated Gate Bipolar Transistor (IGBT)
B = IGBT Generation 5 NPT
Current rating (200 = 200 A)
Circuit configuration (T = Half-bridge)
Package indicator (S = INT-A-PAK)
Voltage rating (60 = 600 V)
Speed/type (N = Ultrafast IGBT)
Lead (Pb)-free
CIRCUIT CONFIGURATION
3
6
7
1
4
5
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95173
Document Number: 94503
Revision: 04-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
7
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT/Thyristor
DIMENSIONS in millimeters (inches)
Ø 6.5 (0.25 DIA)
80 (3.15)
17 (0.67) 23 (0.91)
23 (0.91)
5 (0.20)
1
2
3
66 (2.60)
94 (3.70)
37 (1.44)
3 screws M6 x 10
Document Number: 95067
Revision: 15-Feb-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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1
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