GBPC104-E4/51 [VISHAY]
Glass Passivated Single-Phase Bridge Rectifier;
| 型号： | GBPC104-E4/51 |
| 厂家： | 
VISHAY |
| 描述： | Glass Passivated Single-Phase Bridge Rectifier |
| 文件： | 总5页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GBPC1005, GBPC101, GBPC102, GBPC104, GBPC106, GBPC108, GBPC110
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
~
• UL recognition, file number E54214
• Ideal for printed circuit boards
~
e4
• Typical IR less than 0.1 μA
• High case dielectric strength
• High surge current capability
~
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
Case Style GBPC1
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
Package
GBPC1
3 A
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
IF(AV)
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
VRRM
IFSM
IR
60 A
5 μA
MECHANICAL DATA
Case: GBPC1
VF at IF = 1.5 A
TJ max.
1.0 V
150 °C
Quad
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Diode variations
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked, positive lead by belevled corner
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
GBPC
1005
GBPC
GBPC
102
GBPC
104
GBPC
106
GBPC
108
GBPC
110
PARAMETER
SYMBOL
UNIT
101
100
70
Maximum repetitive peak reverse voltage
Maximum RMS bridge input voltage
Maximum DC blocking voltage
VRRM
VRMS
VDC
50
35
50
200
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
V
V
V
100
1000
T
C = 60 °C (1)
Maximum average forward
rectified output current at
IF(AV)
A
TA = 25 °C (2)
2.0
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
I2t
60
15
A
Rating for fusing (t < 8.3 ms)
A2s
°C
Operating junction and storage temperature
range
TJ, TSTG
- 55 to + 150
Notes
(1)
Unit mounted on 4.0" x 4.0" x 0.11" thick (10.5 cm x 10.5 cm x 0.3 cm) aluminum plate
Unit mounted on P.C.B. at 0.375" (9.5 mm) lead length with 0.5" x 0.5" (12 mm x 12 mm) copper pads
(2)
Revision: 08-Jul-13
Document Number: 88611
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GBPC1005, GBPC101, GBPC102, GBPC104, GBPC106, GBPC108, GBPC110
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
GBPC
1005
GBPC GBPC GBPC GBPC GBPC GBPC
PARAMETER
TEST CONDITIONS SYMBOL
UNIT
101
102
104
106
108
110
Maximum instantaneous
forward voltage drop per
diode
IF = 1.5 A
VF
1.0
V
Maximum DC reverse
current at rated DC blocking
voltage per diode
TA = 25 °C
5.0
IR
μA
pF
TA = 125 °C
500
Typicaljunctioncapacitance
per diode
4.0 V, 1 MHz
CJ
21
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
GBPC
1005
GBPC
101
GBPC
102
GBPC
104
GBPC
106
GBPC
108
GBPC
110
PARAMETER
SYMBOL
UNIT
RJA
RJC
12
Typical thermal resistance (1)
°C/W
8.0
Note
(1)
Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #6 screw
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
GBPC106-E4/51
2.5
51
100
Paper box
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
5.0
4.0
3.0
2.0
1.0
0
60
50
40
30
20
10
0
TC = 60 °C
Single Sine-Wave
Case Temperature,
TC Heatsink Mounting
4.0 x 4.0 x 0.11" Thk.
(10.5 x 10.5 x 0.3 cm)
Al. Plate
60 Hz Resistive or
Inductive Load
Ambient Temperature, TA
P.C.B. Mounting
0.375" (9.5 mm) Lead Length
1.0 Cycle
1
10
Number of Cycles at 60 Hz
100
0
50
100
150
Ambient Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 08-Jul-13
Document Number: 88611
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GBPC1005, GBPC101, GBPC102, GBPC104, GBPC106, GBPC108, GBPC110
www.vishay.com
Vishay General Semiconductor
100
10
100
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
0.1
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
100
10
10
TJ = 125 °C
1
1
0.1
TJ = 25 °C
80
0.01
0.1
0.01
0
20
40
60
0.1
1
10
100
100
t - Heating Time (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style GBPC1
0.630 (16.00)
0.590 (14.98)
Hole For #6 Screw
0.158 (4.01)
0.142 (3.61)
DIA.
0.445 (11.30)
0.405 (10.29)
AC
0.630 (16.00)
0.590 (14.98)
0.445 (11.30)
0.405 (10.29)
AC
0.094 (2.4) x 45°
0.128 (3.25)
0.048 (1.22)
0.040 (1.02) TYP.
0.032 (0.81)
0.028 (0.71)
DIA.
0.750 (19.05)
MIN.
0.200 (5.08)
0.160 (4.06)
Polarity shown on side of case: Positive lead by beveled corner
Revision: 08-Jul-13
Document Number: 88611
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 02-Oct-12
Document Number: 91000
1
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