GF1M/2JA [VISHAY]
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214BA, PLASTIC, GF1, 2 PIN;
| 型号： | GF1M/2JA |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214BA, PLASTIC, GF1, 2 PIN 光电二极管 |
| 文件： | 总4页 (文件大小：335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GF1A thru GF1M
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
®
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
VF
1.0 A
50 V to 1000 V
30 A
1.1 V, 1.2 V
5.0 µA
*
IR
d
e
t
n
e
Tj max.
175 °C
t
a
P
* Glass-plastic encapsulation
technique is covered by patent
No. 3,996,602, brazed-lead
DO-214BA (GF1)
assembly by Patent No. 3,930,306
and lead forming by Patent No. 5,151,846
Features
Mechanical Data
• Superectifier structure for high reliability
condition
Case: DO-214BA, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
• Patented glass-plastic encapsulation technique
• Ideal for automated placement
• Low forward voltage drop
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• Low leakage current
• High forward surge capability
Polarity: Color band denotes cathode end
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for consumer, automotive and Telecommunication
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit
Device marking code
GA
50
GB
GD
GG
400
GJ
GK
GM
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
100
200
600
800
1000
V
V
V
A
A
VRMS
VDC
35
50
70
140
200
280
400
1.0
30
420
600
560
800
700
Maximum DC blocking voltage
100
1000
Maximum average forward rectified current at TL = 125 °C
IF(AV)
IFSM
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
TJ,TSTG
- 65 to + 175
°C
Document Number 88617
10-Aug-05
www.vishay.com
1
GF1A thru GF1M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
at 1.0 A
Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit
Maximum instantaneous
forward voltage
VF
1.1
1.2
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
TA = 125 °C
IR
5.0
50
µA
Typical reverse recovery time at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
3.0
µs
pF
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
15
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit
Typical thermal resistance(1)
RθJA
RθJL
80
26
°C/W
Note:
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
30
60 Hz Resistive or Inductive Load
TJ = TJ max.
8.3 ms Single Half Sine-Wave
25
1.0
0.5
20
15
10
5
P.C.B. Mounted on
0.2 x 0.2” (5.0 x 5.0mm)
Copper Pad Areas
0
0
110
120
130
100
140
150
160
175
10
1
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88617
10-Aug-05
2
GF1A thru GF1M
Vishay General Semiconductor
30
10
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
0.1
0.01
Pulse Width = 300µs
1% Duty Cycle
TJ = 25 °C
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
1
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
100
10
1
Mounted on
0.2 x 0.27” (5.0 x 7.0mm)
Copper Pad Areas
1
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.1
0.01
0
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-214BA (GF1)
Cathode Band
Mounting Pad Layout
0.076 MAX.
(1.93 MAX.)
0.066 (1.68)
0.066 MIN.
(1.68 MIN.)
0.040 (1.02)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.060 MIN.
(1.52 MIN.)
0.0065 (0.17)
0.108 (2.74)
0.098 (2.49)
0.118 (3.00)
0.100 (2.54)
0.220
(5.58) REF
0.114 (2.90)
0.094 (2.39)
0.006 (0.152) TYP.
0.060 (1.52)
0.030 (0.76)
0.226 (5.74)
0.196 (4.98)
Document Number 88617
10-Aug-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
GF1ME3
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode
VISHAY
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