GI1-1400GP/56 [VISHAY]

Rectifier Diode, 1 Element, 1A, 1400V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN;
GI1-1400GP/56
型号: GI1-1400GP/56
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Element, 1A, 1400V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

二极管
文件: 总3页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GI1-1200GP thru GI1-1600GP  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Miniature High Voltage  
Glass Passivated Rectifier  
Reverse Voltage 1200 to 1600 V  
Forward Current 1.0 A  
DO-204AC (DO-15)  
Features  
Plastic package has Underwriters Laboratory  
0.034 (0.86)  
0.028 (0.71)  
Dia.  
Flammability Classification 94V-0.  
High temperature metallurgically bonded construction  
Cavity-free glass passivated junction  
1.0 ampere operation at TA=75°C with no thermal runaway  
Typical IR less than 0.1µA  
1.0 (25.4)  
min.  
Hermetically sealed package  
Capable of meeting environmental standards of  
MIL-S-19500  
0.300 (7.6)  
0.230 (5.8)  
High temperature soldering guaranteed: 350°C/10 seconds,  
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension  
0.140 (3.6)  
0.104 (2.6)  
Dia.  
Mechanical Data  
Case: JEDEC DO-204AC, molded plastic over glass body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
®
.0 (25.4)  
min.  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: 0.015 oz., 0.4 g  
*Glass-plastic encapsulation technique is covered by  
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306.  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
VRMS  
VDC  
GI1-1200GP GI1-1400GP GI1-1600GP  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
1200  
840  
1400  
980  
1600  
1120  
1600  
V
V
Maximum DC blocking voltage  
1200  
1400  
V
Maximum average forward rectified current  
0.375” (9.5mm) lead length at TA=75°C  
IF(AV  
)
1.0  
30  
A
A
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
Typical thermal resistance (1)  
RΘJA  
55  
°C/W  
°C  
Operating junction and storage temperature range  
TJ,TSTG  
-65 to +175  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
GI1-1200GP GI1-1400GP GI1-1600GP  
Unit  
Maximum instantaneous forward voltage  
at 1.0A  
at 3.14A  
1.1  
1.3  
VF  
V
Maximum DC reverse current  
at rated DC blocking voltage  
TA= 25°C  
TA=100°C  
10  
IR  
trr  
trr  
µA  
µs  
µs  
100  
Maximum reverse recovery time at IFM=20mA, IRM=2mA  
25  
Maximum reverse recovery time  
at IF=0.5A, IR=1.0A, Irr=0.25A  
typical  
0.7  
1.5  
maximum  
Maximum forward recovery time at IFM=20mA  
Typical junction capacitance at 4.0V, 1MHz  
tfr  
1.0  
15  
µs  
CJ  
pF  
Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted  
Document Number 88622  
03-Jan-03  
www.vishay.com  
1
GI1-1200GP thru GI1-1600GP  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig. 1 – Forward Current  
Derating Curve  
Fig. 2 – Maximum Non-Repetitive  
Peak Forward Surge Current  
1.5  
50  
40  
8.3ms Single Half Sine-Wave  
(JEDEC Method)  
60 HZ Resistive  
or Inductive Load  
0.375" (9.5mm) Lead Length  
1.25  
1.0  
TA = 25°C  
No Load  
Condition  
30  
20  
10  
0
Ipk / IAV = π  
0.75  
0.5  
Capacitance Load  
TJ = TJ max.  
Rated Load  
Conditions  
5.0  
10  
20  
0.25  
0
1
10  
100  
20  
40  
60  
80  
100  
120  
140  
160  
180  
Ambient Temperature (°C)  
Number of Cycles at 60 HZ  
Fig. 3 – Typical Instantaneous  
Forward Characteristics  
Fig. 4 – Typical Reverse  
Characteristics  
10  
10  
1
TJ = 125°C  
Pulse Width = 300µs  
TJ = 150°C  
1% Duty Cycle  
1
T
J = 25°C  
TJ = 75°C  
TJ = 25°C  
0.1  
0.1  
0.01  
0.01  
0
20  
40  
60  
80  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Instantaneous Forward Voltage (V)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 5 – Typical Junction  
Capacitance  
30  
10  
T
= 25°C  
J
f = 1.0MHZ  
Vsig = 50MVp-p  
1
1
10  
100  
Reverse Voltage (V)  
www.vishay.com  
2
Document Number 88622  
03-Jan-03  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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