GI811/65 [VISHAY]

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN;
GI811/65
型号: GI811/65
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

二极管
文件: 总4页 (文件大小:328K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GI810 thru GI818  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
50 V to 1000 V  
30 A  
750 ns  
*
IR  
10 µA  
d
e
t
n
e
VF  
1.2 V  
t
a
P
DO-204AC (DO-15)  
Tj max.  
175 °C  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
condition  
Case: DO-204AC, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For general purpose of medium frequency rectifica-  
tion  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol GI810 GI811 GI812 GI814 GI816 GI817 GI818 Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum RMS voltage  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA= 75 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Document Number 88628  
12-Oct-05  
www.vishay.com  
1
GI810 thru GI818  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Test condition  
at 1.0 A  
Symbol GI810 GI811 GI812 GI814 GI816 GI817 GI818 Unit  
Maximum instantaneous  
forward voltage  
VF  
1.2  
V
Maximum DC reverse current  
at rated DC blocking voltage  
TA= 25 °C  
TA= 100 °C  
IR  
10  
100  
µA  
Maximum reverse recovery  
time  
IF = 1.0 A, VR = 30 V,  
di/dt = 50 A/µs  
trr  
750  
ns  
Typical junction capacitance  
at 4.0 V, 1 MHz  
CJ  
25  
pF  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Typical thermal resistance (1)  
Notes:  
Symbol GI810 GI811 GI812 GI814 GI816 GI817 GI818 Unit  
RθJA 45 °C/W  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
1.0  
0.8  
0.6  
0.4  
0.2  
0
40  
30  
20  
10  
0
TA = 75 °C  
8.3 ms Single Half Sine Wave  
(JEDEC Method)  
Resistive or  
Inductive Load  
0.375" (9.5mm) Lead Length  
1
10  
100  
20  
40  
60  
80  
100  
120 140  
160  
180  
Ambient Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88628  
12-Oct-05  
GI810 thru GI818  
Vishay General Semiconductor  
100  
10  
1
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
TJ = 25 °C  
Pulse Width = 300 µs  
1% Duty Cycle  
10  
0.1  
0.01  
1
1
10  
100  
0.8  
Instantaneous Forward Voltage (V)  
0.4  
0.6  
1.0  
1.2  
1.4  
1.6  
1.8  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
20  
10  
100  
10  
TJ = 125 °C  
1
TJ = 75 °C  
1
0.1  
TJ = 25 °C  
0.1  
0.01  
0.01  
0
20  
40  
0.1  
1
10  
100  
60  
80  
100  
Percent of Rated Peak Reverse Voltage (%)  
t, Pulse Duration (sec.)  
Figure 4. Typical Reverse Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package outline dimensions in inches (millimeters)  
DO-204AC (DO-15)  
0.034 (0.86)  
0.028 (0.71)  
Dia.  
1.0 (25.4)  
min.  
0.300 (7.6)  
0.230 (5.8)  
0.140 (3.6)  
0.104 (2.6)  
Dia.  
1.0 (25.4)  
min.  
Document Number 88628  
12-Oct-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

相关型号:

GI811/66-E3

DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
VISHAY

GI811/68

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY

GI811/70-E3

DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
VISHAY

GI811/71

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY

GI811/72

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY

GI811/72-E3

DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
VISHAY

GI811/73

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY

GI811/74

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY

GI811/90

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY

GI811/91

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY

GI811/92

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY

GI811/93

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY