GI820E3 [VISHAY]
DIODE 5 A, 50 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode;
| 型号： | GI820E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 5 A, 50 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode |
| 文件： | 总3页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GI820 thru GI828
Vishay Semiconductors
Fast Switching Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
trr
5.0 A
50 V to 800 V
300 A
200 ns
VF
1.05 V
IR
10 µA
Case Style P600
Tj max.
150 °C
Features
Mechanical Data
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
Case: P600, void-free molded plastic body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and MIL-STD-750, Method
2026
• High forward current operation
• High forward surge capability
Polarity: Color band denotes cathode end
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer and Telecommunication.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol GI820 GI821 GI822 GI824 GI826 GI828
Unit
V
Maximum repetitive peak reverse voltage
VRRM
VRMS
VDC
50
35
50
75
100
70
200
140
200
250
400
280
400
450
600
420
600
650
800
560
800
880
Maximum RMS voltage
V
V
V
A
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
100
150
VRSM
IF(AV)
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at TA = 55 °C
5.0
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
IFSM
300
A
Operating junction and storage temperature range
TJ, TSTG
- 50 to + 150
°C
Document Number 88629
28-Apr-05
www.vishay.com
1
GI820 thru GI828
Vishay Semiconductors
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol GI820 GI821 GI822 GI824 GI826 GI828
Unit
V
Maximum instantaneous
forward voltage
at 5.0 A
at 15.7 A
TJ = 25 °C
VF
1.10
1.05
TJ = 100 °C
Maximum DC reverse
current at rated DC
blocking voltage
T
A = 25 °C
IR
10
1.0
µA
TA = 100 °C
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
trr
300
200
pF
ns
Maximum reverse recovery IF = 1.0 A, VR = 30 V,
time
di/dt = 50 A/µs, Irr = 10% IRM
Maximum reverse recovery IF = 1.0 A, VR = 30 V,
current
IRM(REC)
2.0
ns
di/dt = 50 A/µs,
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Typical thermal resistance (1)
Notes:
Symbol GI820 GI821 GI822 GI824 GI826 GI828
RθJA 10
Unit
°C/W
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length with both leads equally heat sink
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
20
7.0
Resistive or Inductive Load
L = Lead Length
L
6.0
5.0
4.0
3.0
2.0
1.0
0
I(pk)
=
16
12
8
0.12"
= π
I(AV)
(3.2mm)
1.1 x 1.1" (30 x 30mm)
Copper Pads
1.6 x 1.6 x 0.04"
(40 x 40 x 1mm)
Copper Heatsink
L
L
=
0.25"
(6.3mm)
=
=
0.375"
0.62"
(9.5mm)
Capacitive Load
L
I(pk)
5.0
10
20
4
=
(15.9mm)
I(AV)
0
75 80 85 90 95 100 105 110 115 120 125
20
40
60
80
100
120
140
160
180
Lead Temperature °C
Ambient Temperature (°C)
Figure 1. Forward Current Derating Curves
Figure 2. Forward Current Derating Curve
www.vishay.com
Document Number 88629
28-Apr-05
2
GI820 thru GI828
Vishay Semiconductors
400
350
300
250
200
150
100
10
1
8.3ms Single Half Sine-Wave
TJ = 100°C
TA = 25°C
TJ = 50°C
TJ = 25°C
0.1
TJ= 125°C
0.01
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 HZ
Percent of Rated Peak Reverse Voltage (V)
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Reverse Characteristics
25
100
L = Lead Length
20
15
10
5.0
0
10
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
1
0.1
0.6
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Equal Lead Lengths to Heatsink (Inches)
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Figure 4. Typical Instantaneous Forward Characteristics
Figure 6. Typical Thermal Resistance
Package outline dimensions in inches (millimeters)
Case Style P600
1.0 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
1.0 (25.4)
0.048 (1.22)
MIN.
DIA.
Document Number 88629
28-Apr-05
www.vishay.com
3
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