GI858/4F [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2;
GI858/4F
型号: GI858/4F
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

功效 二极管
文件: 总4页 (文件大小:293K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GI850 thru GI858  
Vishay General Semiconductor  
Fast Switching Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
3.0 A  
50 V to 800 V  
100 A  
200 ns  
IR  
10 µA  
VF  
1.25 V  
DO-201AD  
Tj max.  
150 °C  
Features  
Mechanical Data  
• Fast switching for high efficiency  
• Low forward voltage drop  
• Low leakage current  
Case: DO-201AD, molded epoxy body  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes cathode end  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for  
consumer and Telecommunication.  
(Note: These devices are not Q101 qualified. There-  
fore, the devices specified in this datasheet have not  
been designed for use in automotive or Hi-Rel appli-  
cations.)  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
VRRM  
GI850  
50  
GI851  
100  
GI852  
200  
GI854  
400  
GI856  
600  
GI858  
800  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
75  
70  
140  
200  
250  
280  
400  
450  
420  
600  
650  
560  
800  
880  
V
V
V
A
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
100  
150  
VRSM  
IF(AV)  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA= 90 °C  
3.0  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
100  
A
Operating junction and storage temperature range TJ,TSTG  
- 50 to + 150  
°C  
Document Number 88630  
10-Oct-05  
www.vishay.com  
1
GI850 thru GI858  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Maximum  
instantaneous  
forward voltage  
Test condition  
at 3.0 A  
at 9.4 A, TJ = 175 °C  
Symbol  
VF  
GI850  
150  
GI851  
150  
GI852  
200  
GI854  
250  
GI856  
300  
GI858  
500  
Unit  
V
1.25  
1.10  
MaximumDCreverse  
current at rated DC  
blocking voltage  
TA = 25 °C  
TA = 100 °C  
IR  
10  
µA  
ns  
Maximum reverse  
recovery time  
at IF = 1.0 A, VR = 30 V,  
trr  
200  
di/dt = 50 A/µs,  
Irr = 10 % IRM  
Maximum reverse  
recovery time  
at IF = 1.0 A, VR = 30 V,  
IRM(REC)  
2.0  
28  
A
di/dt = 50 A/µs,  
Irr = 10 % IRM  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
pF  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Typical thermal resistance (1)  
Symbol  
RθJA  
RθJL  
GI850  
GI851  
GI852  
GI854  
GI856  
GI858  
Unit  
22  
8.0  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
200  
100  
8.0  
6.0  
4.0  
L = Lead Length  
TL = Lead Temperature  
8.3 ms Single Half Sine-Wave  
Non-Repetitive  
TJ = 25 °C  
0.8 x 0.8 x 0.40"  
(20 x 20 x 1mm)  
Copper Heatsinks  
L = 0.375" (9.5mm)  
Lead Length  
TJ = 150 °C  
TJ = 25 °C  
TA = Ambient Temperature  
0.375" (9.5mm) Lead Length  
2.0  
0
TJ = 150 °C  
Repetitive  
10  
50  
30  
70  
90  
Temperature (°C)  
Figure 1. Forward Current Derating Curves  
110  
130  
150  
170  
1
10  
100  
Number of Cycles at 60 Hz  
Figure 2. Maximum Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88630  
10-Oct-05  
GI850 thru GI858  
Vishay General Semiconductor  
100  
100  
10  
1
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
TJ = 25 °C  
Pulse Width = 300 µs  
1% Duty Cycle  
0.1  
10  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
1
10  
100  
Reverse Voltage (V)  
Instantaneous Forward Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
10  
TJ = 100°C  
1
TJ = 50°C  
0.1  
TJ = 25°C  
0.01  
0
20  
40  
60  
80  
100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics  
Package outline dimensions in inches (millimeters)  
DO-201AD  
1.0 (25.4)  
Min.  
0.210 (5.3)  
0.190 (4.8)  
Dia.  
0.375 (9.5)  
0.285 (7.2)  
1.0 (25.4)  
Min.  
0.052 (1.32)  
0.048 (1.22)  
Dia.  
Document Number 88630  
10-Oct-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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