GI911 [VISHAY]

MEDIUM-SWITCHING PLASTIC RECTIFIER; MEDIUM开关塑封整流
GI911
型号: GI911
厂家: VISHAY    VISHAY
描述:

MEDIUM-SWITCHING PLASTIC RECTIFIER
MEDIUM开关塑封整流

开关
文件: 总2页 (文件大小:47K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GI910 THRU GI917  
MEDIUM-SWITCHING PLASTIC RECTIFIER  
Reverse Voltage - 50 to 800 Volts  
Forward Current - 3.0 Amperes  
DO-201AD  
FEATURES  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
High surge current capability  
Construction utilizes void-free molded plastic technique  
High forward current operation  
1.0 (25.4)  
MIN.  
0.210 (5.3)  
Fast switching for high efficiency  
0.190 (4.8)  
DIA.  
High temperature soldering guaranteed:  
250°C/10 seconds, 0.375 (9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.375 (9.5)  
0.285 (7.2)  
MECHANICAL DATA  
Case: JEDEC DO-201AD molded plastic body  
Terminals: Plated axial leads solderable per MIL-STD-750,  
Method 2026  
0.052 (1.32)  
1.0 (25.4)  
MIN.  
0.048 (1.22)  
DIA.  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: 0.04 ounce, 1.1 grams  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOLS  
VRRM  
VRMS  
VDC  
GI910  
50  
GI911  
100  
70  
GI912  
200  
140  
200  
GI914  
400  
280  
400  
GI916  
600  
420  
600  
GI917  
800  
560  
800  
UNITS  
Volts  
Volts  
Volts  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
35  
Maximum DC blocking voltage  
50  
100  
Maximum average forward rectified current  
0.375" (9.5mm) lead length at TA=90°C  
I(AV)  
3.0  
Amps  
Amps  
Peak forward surge current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
100.0  
Maximum instantaneous forward voltage at:  
3.0A  
9.4A, TJ=175°C  
1.25  
1.10  
VF  
IR  
Volts  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25°C  
TA=100°C  
10.0  
300.0  
µA  
Typical junction capacitance (NOTE 1)  
CJ  
trr  
28.0  
750  
2.0  
pF  
ns  
Maximum reverse recovery time (NOTE 2)  
Maximum reverse recovery current  
Typical thermal resistance (NOTE 3)  
IRM(REC)  
Amps  
RΘJA  
RΘJL  
22.0  
8.0  
°C/W  
°C  
Operating junction and storage temperature range  
TJ ,TSTG  
-50 to +150  
NOTES:  
(1) Measured at 1 MHz and applied reverse voltage of 4.0 Volts  
(2) Reverse recovery test conditions: IF=1.0A, VR=30V, di/dt=50A/µs, and Irr=10% IRM for measurement of trr  
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,  
both leads equally heat sink  
4/98  
RATINGS AND CHARACTERISTIC CURVES GI910 THRU GI917  
FIG.1 - FORWARD CURRENT DERATING CURVE  
FIG. 2 - MAXIMUM PEAK FORWARD SURGE CURRENT  
4.0  
3.0  
2.0  
1.0  
0
200  
100  
I
I
(pk)  
0.375” (9.5mm)  
LEAD LENGTH  
=
π
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
T =25°C  
J
(AV)  
0.8 x 0.8 x 0.04”  
(20 x 20 x 1mm)  
COPPER HEATSINKS  
NON-REPETITIVE  
T =150°C  
J
CAPACITIVE  
LOADS  
REPETITIVE  
I
5.0  
10  
20  
(pk)  
=
I
(AV)  
30  
50  
70  
90  
110  
130  
150  
170  
AMBIENT TEMPERATURE, °C  
10  
1
10  
100  
NUMBER OF CYCLES AT 60 HZ  
FIG. 3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
100  
10  
1
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS  
10  
1
T =100°C  
J
T =50°C  
J
0.1  
T =25°C  
J
0.1  
T =25°C  
J
PULSE WIDTH=300µs  
1% DUTY CYCLE  
0.01  
0
80  
20  
60  
100  
40  
0.01  
PERCENT OF RATED PEAK REVERSE  
VOLTAGE, %  
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
FIG. 5 - TYPICAL JUNCTION CAPACITANCE  
100  
T =25°C  
J
f=1.0 MHz  
Vsig=50mVp-p  
10  
1
100  
10  
REVERSE VOLTAGE, VOLTS  

相关型号:

GI911-E3

DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY

GI911-E3/54

DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY

GI911/100

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY

GI911/4

Rectifier Diode, 1 Element, 3A, 100V V(RRM)
VISHAY

GI911/4E

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY

GI911/4H

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY

GI911/51

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY

GI911/53

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY

GI911/56

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY

GI911/62

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY

GI911/64

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY

GI911/65

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
VISHAY