GI912/56
更新时间：2024-09-18 14:16:44
品牌：VISHAY
描述：Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
概述
规格参数
数据手册GI912/56 概述
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 整流二极管
GI912/56 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| 零件包装代码： | DO-201AD | 包装说明： | O-PALF-W2 |
| 针数： | 2 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.80 |
| 风险等级： | 5.82 | Is Samacsys： | N |
| 其他特性： | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 应用： | EFFICIENCY |
| 外壳连接： | ISOLATED | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| JEDEC-95代码： | DO-201AD | JESD-30 代码： | O-PALF-W2 |
| JESD-609代码： | e0 | 最大非重复峰值正向电流： | 100 A |
| 元件数量： | 1 | 相数： | 1 |
| 端子数量： | 2 | 最高工作温度： | 150 °C |
| 最低工作温度： | -50 °C | 最大输出电流： | 3 A |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | ROUND |
| 封装形式： | LONG FORM | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 认证状态： | Not Qualified | 最大重复峰值反向电压： | 200 V |
| 最大反向恢复时间： | 0.75 µs | 表面贴装： | NO |
| 端子面层： | TIN LEAD | 端子形式： | WIRE |
| 端子位置： | AXIAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| Base Number Matches： | 1 |
GI912/56 数据手册
通过下载GI912/56数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载GI910 thru GI917
Vishay General Semiconductor
Medium-Switching Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
trr
3.0 A
50 V to 800 V
100 A
750 ns
IR
10 µA
VF
1.25 V
DO-201AD
Tj max.
150 °C
Features
Mechanical Data
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
Case: DO-201AD, molded epoxy body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: Color band denotes cathode end
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer and Telecommunication.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
VRRM
GI910
50
GI911
100
GI912
200
GI914
400
GI916
600
GI917
800
Unit
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRMS
VDC
35
50
70
140
200
280
400
420
600
560
800
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA = 90 °C
IF(AV)
3.0
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM
100
A
Operating junction and storage temperature range TJ,TSTG
- 50 to + 150
°C
Document Number 88631
10-Oct-05
www.vishay.com
1
GI910 thru GI917
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Maximum
instantaneous
forward voltage
Test condition
at 3.0 A
at 9.4 A, TJ = 175 °C
Symbol
VF
GI910
GI911
GI912
GI914
GI916
GI917
Unit
V
1.25
1.10
MaximumDCreverse
current at rated DC
blocking voltage
TA= 25 °C
TA=100 °C
IR
10
300
µA
ns
Maximum reverse
recovery time
at IF = 1.0 A, VR = 30V,
trr
750
2.0
28
di/dt = 50 A/µs,
Irr = 10 % IRM
Maximum reverse
recovery time
at IF = 1.0 A, VR = 30 V,
IRM(REC)
A
di/dt = 50 A/µs,
Irr = 10 % IRM
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
pF
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Typical thermal resistance (1)
Symbol
RθJA
RθJL
GI910
GI911
GI912
GI914
GI916
GI917
Unit
22
8.0
°C/W
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
200
100
4.0
3.0
2.0
I(pk)
0.375" (9.5mm)
Lead Length
= π
8.3 ms Single Half Sine-Wave
I(AV)
Non-Repetitive
TJ = 25 °C
0.8 x 0.8 x 0.40"
(20 x 20 x 1mm)
Copper Heatsinks
Capacitive Load
TJ = 150 °C
I(pk)
5.0
10
20
=
I(AV)
1.0
0
Repetitive
10
1
10
Number of Cycles at 60 Hz
100
30
50
70
90
110
130
150
170
Ambient Temperature (°C)
Figure 1. Forward Current Derating Curves
Figure 2. Maximum Peak Forward Surge Current
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2
Document Number 88631
10-Oct-05
GI910 thru GI917
Vishay General Semiconductor
100
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
0.1
0.01
10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
TJ = 100 °C
1
TJ = 50 °C
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
Package outline dimensions in inches (millimeters)
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Document Number 88631
10-Oct-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
GI912/56 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| GI912/60 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 | 获取价格 |
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| GI912/62 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 | 获取价格 |
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| GI912/65 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 | 获取价格 |
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| GI912/66 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 | 获取价格 |
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| GI912/68 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 | 获取价格 |
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| GI912/70 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 | 获取价格 |
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| GI912/73 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 | 获取价格 |
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| GI912/74 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 | 获取价格 |
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| GI912/90 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 | 获取价格 |
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