GI914/1 [VISHAY]
Rectifier Diode, 1 Element, 3A, 400V V(RRM),;
| 型号： | GI914/1 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 3A, 400V V(RRM), 二极管 |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GI910 thru GI917
Vishay Semiconductors
formerly General Semiconductor
Medium-Switching Plastic Rectifier
Reverse Voltage 500 to 800 V
Forward Current 3.0 A
DO-201AD
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High surge current capability
• Construction utilizes void-free molded plastic technique
• High forward current operation
1.0 (25.4)
MIN.
0.210 (5.3)
• Fast switching for high efficiency
0.190 (4.8)
DIA.
• High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
0.375 (9.5)
0.285 (7.2)
Mechanical Data
Case: JEDEC DO-201AD, molded plastic body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
0.052 (1.32)
Polarity: Color band denotes cathode end
Mounting Position: Any
1.0 (25.4)
MIN.
0.048 (1.22)
DIA.
Weight: 0.04 oz., 1.1 g
Packaging codes/options:
1/Bulk - 1.5K per container, 15K per box
4/1.4K per 13" reel, 5.6K per box
23/1K per Ammo. mag., 9K per box
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
VRRM
VRMS
VDC
GI910
GI911
100
70
GI912
GI914
GI916
GI918
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
50
200
400
600
800
V
35
140
280
420
560
V
Maximum DC blocking voltage
50
100
200
400
600
800
V
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=90°C
IF(AV)
3.0
A
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
100
A
Typical thermal resistance (1)
RΘJA
RΘJL
22
8.0
°C/W
°C
Operating junction and storage temperature range
TJ, TSTG
-50 to +150
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
GI910
GI911
GI912
GI914
GI916
GI918
Unit
Maximum instantaneous forward voltage at 3.0A
1.25
1.10
VF
V
9.4A, TJ=175°C
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
10
300
IR
trr
IRM(REC)
CJ
µA
Maximum reverse recovery time at
IF=1.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM
750
ns
Maximum reverse recovery time at
IF=1.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM
2.0
28
A
Typical junction capacitance at 4.0V, 1MHz
pF
Notes: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length, with both leads equally heat sink
Document Number 88631
22-Mar-02
www.vishay.com
1
GI910 thru GI917
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Fig. 2 – Maximum Peak Forward
Surge Current
Derating Curves
4.0
200
100
I(pk)
0.375" (9.5mm)
Lead Length
8.3ms Single Half Sine-Wave
(JEDEC Method)
= π
I(AV)
3.0
2.0
TJ = 25°C
Non-Repetitive
0.8 x 0.8 x 0.40"
(20 x 20 x 1mm)
Copper Heatsinks
Capacitive Load
TJ = 150°C
I(pk)
5.0
10
20
=
I(AV)
1.0
0
Repetitive
10
30
50
70
90
110
130
150
170
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse
Characteristics
10
1
100
10
1
TJ = 100°C
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
TJ = 50°C
TJ = 25°C
0.1
0.1
0.01
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
100
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
10
1
10
100
Reverse Voltage (V)
www.vishay.com
2
Document Number 88631
22-Mar-02
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