概述
规格参数
数据手册
替代型号GL41AHE3/97 概述
DIODE GEN PURP 50V 1A DO213AB TVS二极管 信号二极管
GL41AHE3/97 规格参数
| 是否无铅： | 不含铅 | 生命周期： | Active |
| 零件包装代码： | DO-213AB | 包装说明： | O-PELF-R2 |
| 针数： | 2 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.80 |
| 风险等级： | 5.34 | 其他特性： | FREE WHEELING DIODE, HIGH RELIABILITY |
| 外壳连接： | ISOLATED | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| 最大正向电压 (VF)： | 1.1 V | JEDEC-95代码： | DO-213AB |
| JESD-30 代码： | O-PELF-R2 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 最大非重复峰值正向电流： | 30 A |
| 元件数量： | 1 | 端子数量： | 2 |
| 最高工作温度： | 175 °C | 最低工作温度： | -65 °C |
| 最大输出电流： | 1 A | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | ROUND | 封装形式： | LONG FORM |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 认证状态： | Not Qualified |
| 最大重复峰值反向电压： | 50 V | 子类别： | Rectifier Diodes |
| 表面贴装： | YES | 端子面层： | Matte Tin (Sn) |
| 端子形式： | WRAP AROUND | 端子位置： | END |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | Base Number Matches： | 1 |
GL41AHE3/97 数据手册
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PDF下载BYM10-xxx, GL41x
Vishay General Semiconductor
www.vishay.com
Surface-Mount Glass Passivated Junction Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Ideal for automated placement
Superectifier®
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 250 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MELF (DO-213AB)
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
1.0 A
Case: MELF (DO-213AB), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
V
RRM (BYM10-xxx, GL41x)
50 V to 1000 V, 50 V to 1600 V
IFSM
30 A
10 μA
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive peak
reverse voltage rating
IR
EAS
VF
5 mJ
1.1 V, 1.2 V
175 °C
TJ max.
Package
MELF (DO-213AB)
Single
Circuit configuration
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
BYM
BYM
BYM
BYM
BYM
BYM
BYM
PARAMETER
10-50 10-100 10-200 10-400 10-600 10-800 10-1000
SYMBOL
UNIT
STANDARD RECOVERY
GL41A GL41B GL41D GL41G GL41J GL41K GL41M GL41T GL41Y
DEVICE: 1ST BAND IS WHITE
Polarity color bands (2nd band)
Gray
50
Red
100
Orange Yellow Green
Blue
800
Violet
1000
White
1300
Brown
1600
Max. repetitive peak
reverse voltage
VRRM
200
400
600
V
Max. RMS voltage
VRMS
VDC
35
50
70
140
200
280
400
420
600
560
800
700
910
1120
1600
V
V
Max. DC blocking voltage
100
1000
1300
Max. average forward rectified
current (fig. 1)
IF(AV)
IFSM
1.0
30
A
A
Peak forward surge current
8.3 ms single half sine-wave
Max. full load reverse current
full cycle average
IR(AV)
30
μA
at TA = 75 °C
Non-repetitive peak reverse
avalanche energy at TJ = 25 °C,
EAS
5
-
mJ
°C
IAS = 1 A, L = 10 mH
Operating junction and storage
temperature range
TJ, TSTG
-65 to +175
Revision: 18-May-2021
Document Number: 88546
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYM10-xxx, GL41x
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BYM
BYM
BYM
BYM
BYM
BYM
BYM
TEST
CONDITIONS
10-50 10-100 10-200 10-400 10-600 10-800 10-1000
PARAMETER
SYMBOL
UNIT
GL41A GL41B GL41D GL41G GL41J GL41K GL41M GL41T GL41Y
Max.
instantaneous
forward voltage
1.0 A
VF
1.1
1.2
V
Max. DC
T
T
A = 25 °C
10
50
reverse current
at rated DC
blocking
IR
μA
pF
A = 125 °C
voltage
Typicaljunction
capacitance
4.0 V, 1 MHz
CJ
8.0
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BYM
BYM
BYM
BYM
BYM
BYM
BYM
10-50 10-100 10-200 10-400 10-600 10-800 10-1000
PARAMETER
SYMBOL
UNIT
GL41A GL41B GL41D GL41G GL41J GL41K GL41M GL41T GL41Y
(1)
RθJA
75
30
Typical thermal resistance
°C/W
(2)
RθJT
Notes
(1)
Thermal resistance from junction to ambient, 0.24" x 0.24" (6.0 mm x 6.0 mm) copper pads to each terminal
Thermal resistance from junction to terminal, 0.24" x 0.24" (6.0 mm x 6.0 mm) copper pads to each terminal
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
BYM10-600-E3/96
BYM10-600-E3/97
GL41J-E3/96
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.114
0.114
0.114
0.114
96
97
96
97
1500
5000
1500
5000
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
GL41J-E3/97
Revision: 18-May-2021
Document Number: 88546
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYM10-xxx, GL41x
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.0
0.75
0.50
0.25
0
10
GL41A thru GL41M
TJ = 100 °C
60 Hz
1
Resistive or
GL41T thru GL41Y
Inductive Load
0.1
TJ = 25 °C
0.01
25
50
75
Terminal Temperature (°C)
100
125
150
175
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
30
100
10
1
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
25
20
15
10
5.0
0
GL41A thru GL41M
10
100
1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
10
100
10
1
(
GL41A thru GL41J
GL41K thru GL41Y
1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
Mounted on 0.20" x 0.27" (5 mm x 7 mm)
Copper Pad Areas
0.01
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 18-May-2021
Document Number: 88546
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYM10-xxx, GL41x
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GL41 (DO-213AB)
Mounting Pad Layout
Solderable Ends
1st Band
D2 = D1 + 0
- 0.008 (0.20)
0.138 (3.5) MAX.
0.105 (2.67)
0.095 (2.41)
D2
D1 =
0.118 (3.0) MIN.
0.022 (0.56)
0.018 (0.46)
0.022 (0.56)
0.018 (0.46)
0.049 (1.25) MIN.
0.238 (6.0) REF.
0.205 (5.2)
0.185 (4.7)
st
1
band denotes type and positive end (cathode)
Revision: 18-May-2021
Document Number: 88546
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
GL41AHE3/97 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| GL41AHE3/96 | VISHAY | DIODE GEN PURP 50V 1A DO213AB | 完全替代 |
|
| GL41A-E3/97 | VISHAY | DIODE GEN PURP 50V 1A DO213AB | 类似代替 |
|
| GL41A-E3/96 | VISHAY | DIODE GEN PURP 50V 1A DO213AB | 功能相似 |
|
GL41AHE3/97 相关器件
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| GL41A_1 | FCI | 1.0 Amp MEGARECTIFIERS SINTERED GLASS CAVITY-FREE | 获取价格 |
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| GL41B | VISHAY | SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER | 获取价格 |
|
| GL41B | FCI | 1.0 Amp MEGARECTIFIERS | 获取价格 |
|
| GL41B | BL Galaxy Electrical | SURFACE MOUNT RECTIFIER | 获取价格 |
|
| GL41B | TAITRON | 1.0A Surface Mount Glass Passivated Rectifier | 获取价格 |
|
| GL41B | LGE | Surface Mount Rectifiers | 获取价格 |
|
| GL41B-E3/96 | VISHAY | DIODE GEN PURP 100V 1A DO213AB | 获取价格 |
|
| GL41B-E3/97 | VISHAY | DIODE GEN PURP 100V 1A DO213AB | 获取价格 |
|
| GL41B-HE3 | VISHAY | DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB, LEAD FREE, PLASTIC PACKAGE-2, Signal Diode | 获取价格 |
|
| GL41B-HE3/96 | VISHAY | DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Signal Diode | 获取价格 |
|
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