GLZ30B/D2 [VISHAY]

Zener Diode, 28.42V V(Z), 2.52%, 0.5W, Silicon, Unidirectional, GLASS, MINIMELF-2;
GLZ30B/D2
型号: GLZ30B/D2
厂家: VISHAY    VISHAY
描述:

Zener Diode, 28.42V V(Z), 2.52%, 0.5W, Silicon, Unidirectional, GLASS, MINIMELF-2

文件: 总4页 (文件大小:30K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GLZ Series  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Zener Diodes  
VZ Range 3.3 to 39V  
Power Dissipation 500mW  
MiniMELF (SOD-80C)  
Mounting Pad Layout  
0.098(2.50)  
MAX  
Cathode Mark  
0.049(1.25) MIN  
0.063 (1.6)  
0.055 (1.4)  
0.079(2.00) MIN  
0.019 (0.48)  
0.011 (0.28)  
0.142 (3.6)  
0.134 (3.4)  
0.197(5.00)  
REF  
Dimensions in inches and (millimeters)  
Mechanical Data  
Features  
Case: MiniMELF Glass Case (SOD-80C)  
• Silicon Planar Zener Diodes  
Weight: approx. 0.05g  
• In MiniMELF case especially for automatic insertion  
Packaging codes/options:  
• The Zener voltages are graded according to  
voltage bands instead of by tolerance.  
D1/10K per 13reel (8mm tape), 20K/box  
D2/2.5K per 7reel (8mm tape), 20K/box  
• Low Zener impedance and low leakage current  
• Popular in Asian designs  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Zener Current see Table Characteristics”  
Power Dissipation (see fig. 1)  
Thermal Resistance Junction to Ambient Air  
Junction temperature  
PD  
RθJA  
Tj  
500(1)  
300(1)  
mW  
°C/W  
°C  
175  
Storage temperature range  
TS  
55 to +175  
°C  
Note:  
(1) Valid provided that electrodes are kept at ambient temperature.  
Document Number 88334  
06-May-02  
www.vishay.com  
1
GLZ Series  
Vishay Semiconductors  
formerly General Semiconductor  
Electrical Characteristics (TA = 25°C unless otherwise noted)  
Zener Voltage  
Dynamic Resistance (3)  
Reverse Leakage Current  
(µA)  
V
(V) at I  
Max  
Z
() at I  
Z
() at I  
I
R
Z
ZT  
Z
ZT  
ZK  
ZK  
Rank  
Type  
Min  
I
(mA)  
20  
Max  
I
(mA)  
Max  
1000  
1000  
1000  
I
(mA)  
Max.  
V (V)  
R
ZT  
Z
ZK  
A
B
3.160  
3.320  
3.380  
3.530  
GLZ3.3  
GLZ3.6  
GLZ3.9  
70  
20  
20  
20  
1
1
1
20  
1.0  
A
B
3.455  
3.600  
3.695  
3.845  
20  
60  
10  
1.0  
1.0  
A
B
3.74  
3.89  
4.01  
4.16  
20  
50  
5
A
B
C
4.04  
4.17  
4.30  
4.29  
4.43  
4.57  
GLZ4.3  
GLZ4.7  
GLZ5.1  
GLZ5.6  
GLZ6.2  
GLZ6.8  
GLZ7.5  
GLZ8.2  
GLZ9.1  
20  
20  
20  
20  
20  
20  
20  
20  
20  
40  
25  
20  
13  
10  
8
20  
20  
20  
20  
20  
20  
20  
20  
20  
1000  
900  
800  
500  
300  
150  
120  
120  
120  
1
1
1
1
1
5
5
1.0  
1.0  
1.5  
2.5  
3.0  
3.5  
4.0  
5.0  
6.0  
A
B
C
4.44  
4.55  
4.68  
4.68  
4.80  
4.93  
A
B
C
4.81  
4.94  
5.09  
5.07  
5.20  
5.37  
5
A
B
C
5.28  
5.45  
5.61  
5.55  
5.73  
5.91  
5
A
B
C
5.78  
5.96  
6.12  
6.09  
6.27  
6.44  
5
A
B
C
6.29  
6.49  
6.66  
6.63  
6.83  
7.01  
0.5  
2
A
B
C
6.85  
7.07  
7.29  
7.22  
7.45  
7.67  
8
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
A
B
C
7.53  
7.78  
8.03  
7.92  
8.19  
8.45  
8
A
B
C
8.29  
8.57  
8.83  
8.73  
9.01  
9.30  
8
A
B
C
D
9.12  
9.41  
9.70  
9.94  
9.59  
9.90  
10.20  
10.44  
GLZ10  
20  
8
20  
120  
0.5  
0.2  
7.0  
A
B
C
10.18  
10.50  
10.82  
10.71  
11.05  
11.38  
GLZ11  
GLZ12  
10  
10  
10  
12  
10  
10  
120  
110  
0.5  
0.5  
0.2  
0.2  
8.0  
9.0  
A
B
C
11.13  
11.44  
11.74  
11.71  
12.03  
12.35  
www.vishay.com  
2
Document Number 88334  
06-May-02  
GLZ Series  
Vishay Semiconductors  
formerly General Semiconductor  
Electrical Characteristics (TA = 25°C unless otherwise noted)  
Zener Voltage  
Dynamic Resistance (3)  
Reverse Leakage Current  
V
(V) at I  
Max  
Z
() at I  
Z
() at I  
I (µA)  
R
Z
ZT  
Z
ZT  
ZK  
ZK  
Rank  
Type  
Min  
I
(mA)  
Max  
I
(mA)  
Max  
I
(mA)  
Max.  
V (V)  
R
ZT  
Z
ZK  
A
B
C
12.11  
12.55  
12.99  
12.75  
13.21  
13.66  
GLZ13  
10  
14  
10  
10  
10  
10  
110  
0.5  
0.2  
10  
A
B
C
13.44  
13.89  
14.35  
14.13  
14.62  
15.09  
GLZ15  
GLZ16  
GLZ18  
10  
10  
10  
16  
18  
23  
110  
150  
150  
0.5  
0.5  
0.5  
0.2  
0.2  
0.2  
11  
12  
13  
A
B
C
14.80  
15.25  
15.69  
15.57  
16.04  
16.51  
A
B
C
16.22  
16.82  
17.42  
17.06  
17.70  
18.33  
A
B
C
D
18.02  
18.63  
19.23  
19.72  
18.96  
19.59  
20.22  
20.72  
GLZ20  
GLZ22  
GLZ24  
GLZ27  
GLZ30  
GLZ33  
GLZ36  
GLZ39  
10  
5
28  
30  
35  
45  
55  
65  
75  
85  
10  
5
200  
200  
200  
250  
250  
250  
250  
250  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
15  
17  
19  
21  
23  
25  
27  
30  
A
B
C
D
20.15  
20.64  
21.08  
21.52  
21.20  
21.71  
22.17  
22.63  
A
B
C
D
22.05  
22.61  
23.12  
23.63  
23.18  
23.77  
24.31  
24.85  
5
5
A
B
C
D
24.26  
24.97  
25.63  
26.29  
25.52  
26.26  
26.95  
27.64  
5
5
A
B
C
D
26.99  
27.70  
28.36  
29.02  
28.39  
29.13  
29.82  
30.51  
5
5
A
B
C
D
29.68  
30.32  
30.90  
31.49  
31.22  
31.88  
32.50  
33.11  
5
5
A
B
C
D
32.14  
32.79  
33.40  
34.01  
33.79  
34.49  
35.13  
35.77  
5
5
A
B
C
D
34.68  
35.36  
36.00  
36.63  
36.47  
37.19  
37.85  
38.52  
5
5
Notes: (1) The Zener voltage is measured 40ms after power is supplied.  
(2) Specify Zener voltage rank (A, B, C, or D) when ordering parts  
(3) Dynamic Zener resistance is measured with f = 1kHz  
Document Number 88334  
06-May-02  
www.vishay.com  
3
GLZ Series  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig. 1 – Power Derating Curve  
700  
600  
500  
400  
300  
200  
100  
0
0
25  
50  
75 100 125 150 175 200  
TA --Ambient Temperature (°C)  
Fig. 2 – Typical Breakdown Characteristics  
100  
50  
20 3.6  
10  
5
2
1
0.5  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
VZ -- Zener Voltage (V)  
Fig. 4 – Typical Forward Characteristics  
Fig. 3 – Typical R vs. I  
Z
Z
100  
1000  
100  
10  
GLZ3V6B  
10  
1
GLZ39B  
1
GLZ30A  
GLZ20B  
GLZ8V2B  
0.1  
0.1  
600  
0
50  
100  
150  
200  
700  
800  
900  
1000  
RZ ()  
VF -- Forward Voltage (mV)  
www.vishay.com  
4
Document Number 88334  
06-May-02  

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