GP30M-E3/23 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2;
GP30M-E3/23
型号: GP30M-E3/23
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

文件: 总4页 (文件大小:85K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GP30A thru GP30M  
Vishay General Semiconductor  
Glass Passivated Junction Plastic Rectifiers  
FEATURES  
• Superectifier structure for High Reliability  
condition  
• Cavity-free glass-passivated junction  
• Low leakage current, typical I less than 0.1 µA  
R
• Low forward voltage drop  
• High forward surge capability  
DO-201AD  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly by  
Patent No. 3,930,306  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high voltage rectification of power supply,  
inverters, converters, freewheeling diodes and  
snubber circuit application.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
IR  
3.0 A  
50 V to 1000 V  
125 A  
MECHANICAL DATA  
Case: DO-201AD, molded epoxy over glass body  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
5.0 µA  
VF  
1.2 V, 1.1 V  
175 °C  
Tj max.  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL GP30A GP30B GP30D GP30G GP30J GP30K GP30M UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA = 55 °C  
IF(AV)  
3.0  
A
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
125  
Maximum full load reverse current, full cycle average  
0.375" (9.5 mm) lead length at TA = 55 °C  
IR(AV)  
100  
µA  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Document Number 88640  
23-May-06  
www.vishay.com  
1
GP30A thru GP30M  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL GP30A GP30B GP30D GP30G GP30J GP30K GP30M UNIT  
Maximum  
instantaneous  
forward voltage  
at 3.0 A  
VF  
1.2  
1.1  
V
Maximum reverse  
current at rated DC  
blocking voltage  
T
A = 25 °C  
5.0  
100  
IR  
µA  
TA = 125 °C  
Maximum reverse  
recovery time  
IF = 0.5 A, IR = 1.0 V,  
rr = 0.25 A  
trr  
5.0  
40  
µs  
pF  
I
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL GP30A GP30B GP30D GP30G GP30J GP30K GP30M UNIT  
RθJA  
RθJL  
20  
10  
Typical thermal resistance (1)  
°C/W  
Note:  
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted  
ORDERING INFORMATION  
PREFERRED P/N  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
GP30J-E3/54  
1.28  
1.28  
54  
73  
1400  
1000  
13" Diameter Paper Tape & Reel  
Ammo Pack Packaging  
GP30J-E3/73  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
4.0  
3.0  
200  
100  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
60 Hz  
Resistive or  
Inductive Load  
2.0  
1.0  
0
0.375" (9.5 mm) Lead Length  
10  
150  
175  
0
25  
50  
75  
100  
125  
10  
100  
1
Ambient Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
2
Document Number 88640  
23-May-06  
GP30A thru GP30M  
Vishay General Semiconductor  
100  
100  
10  
TJ = 25 °C  
Pulse Width = 300 µs  
1 % Duty Cycle  
T
J
= 25 °C  
f = 1.0 MHz  
sig = 50 mVp-p  
V
1
0.1  
0.6  
10  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
10  
TJ = 125 °C  
1
TJ = 75 °C  
0.1  
TJ = 25 °C  
0.01  
0
20  
40  
60  
80  
100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
DO-201AD  
1.0 (25.4)  
MIN.  
0.210 (5.3)  
0.190 (4.8)  
DIA.  
0.375 (9.5)  
0.285 (7.2)  
1.0 (25.4)  
MIN.  
0.052 (1.32)  
0.048 (1.22)  
DIA.  
Document Number 88640  
23-May-06  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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