GS9012H/E6 [VISHAY]
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN;
| 型号： | GS9012H/E6 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN 开关 晶体管 |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GS9012
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-226AA (TO-92)
0.142 (3.6)
0.181 (4.6)
Features
• PNP Silicon Epitaxial Planar Transistors for switching
and amplifier applications. Especially suitable for AF-
driver stages and low power output stages such as
portable radios in class-B push-pull operation.
• Complementary to GS9013
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk-5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
max.
0.022 (0.55)
0.098 (2.5)
Bottom
View
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
–40
V
–20
V
–5
V
Collector Current
–500
mA
mW
°C/W
°C
Power Dissipation at Tamb = 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Ptot
625(1)
200(1)
150
RθJA
Tj
Storage Temperature Range
TS
–55 to +150
°C
Notes:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
Document Number 88195
10-May-02
www.vishay.com
1
GS9012
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Current Gain Group D
VCE = –1V, IC = –50mA
64
78
96
112
144
—
—
—
—
—
91
E
F
G
H
112
135
166
202
DC Current Gain
hFE
—
VCE = –1V, IC = –500mA
IC = –1mA, IB = 0
40
–20
–40
–5
90
—
—
—
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
V
V
IC = –100µA, IE = 0
IE = –100µA, IC = 0
VCB = –25V, IE = 0
VEB = –3V, IC = 0
—
—
—
—
V
—
—
–100
–100
–0.6
–1.2
–0.7
nA
nA
V
Emitter Cut-off Current
IEBO
—
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
VCE(sat) IC = –500mA, IB = –50mA
—
–0.18
–0.95
–0.67
VBE(sat)
VBE(on)
IC = –500mA, IB = –50mA
VCE = –1V, IC = –10mA
—
V
–0.6
V
www.vishay.com
2
Document Number 88195
10-May-02
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