GSIB4A60E3 [VISHAY]

DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge Rectifier Diode;
GSIB4A60E3
型号: GSIB4A60E3
厂家: VISHAY    VISHAY
描述:

DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge Rectifier Diode

文件: 总4页 (文件大小:228K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GSIB4A20 thru GSIB4A80  
Vishay General Semiconductor  
Glass Passivated Single-In-Line Bridge Rectifier  
Major Ratings and Characteristics  
Case Style GSIB-3G  
IF(AV)  
VRRM  
IFSM  
IR  
4 A  
200 V to 800 V  
80 A  
5 µA  
VF  
1.0 V  
~
~
~
~
Tj max.  
150 °C  
Features  
Mechanical Data  
• UL Recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
Case: GSIB-3G  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
• High case dielectric strength of 1500 V  
• Solder Dip 260 °C, 40 seconds  
RMS  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
Typical Applications  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Monitor, TV, Printer, Switching Mode  
Power Supply, Adapter, Audio equipment, and Home  
Appliances applications  
Maximum Ratings  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
GSIB4A20  
200  
GSIB4A40  
400  
GSIB4A60  
600  
GSIB4A80  
800  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
140  
200  
280  
400  
420  
600  
560  
800  
V
V
A
Maximum DC blocking voltage  
4.0(1)  
2.3(2)  
Maximum average forward  
rectified output current at  
T
C = 100 °C  
IF(AV)  
TA = 25 °C  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
80  
A
I2t  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
32  
Operating junction and storage temperature  
range  
TJ, TSTG  
- 55 to + 150  
Electrical Characteristics  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Test condition  
at 2.0 A  
Symbol  
VF  
GSIB4A20  
GSIB4A40  
GSIB4A60  
GSIB4A80  
Unit  
V
Maximum instantaneous  
forward drop per leg  
1.00  
Maximum DC reverse  
current at rated DC blocking  
voltage per leg  
T
A = 25 °C  
IR  
5.0  
400  
µA  
TA = 125 °C  
Document Number 88858  
12-Jul-05  
www.vishay.com  
1
GSIB4A20 thru GSIB4A80  
Vishay General Semiconductor  
Thermal Characteristics  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
RθJA  
RθJC  
GSIB4A20  
GSIB4A40  
26(2)  
5(1)  
GSIB4A60  
GSIB4A80  
Unit  
Typical thermal resistance per leg  
°C/W  
Notes:  
(1) Unit case mounted on Al plate heatsink.  
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length  
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
4
100  
Heatsink Mounting, T  
C
Tj = 150°C  
3
2
10  
1
Tj = 25°C  
P.C.B. Mounting, T  
A
Tj = 125°C  
1
0
0.1  
0.01  
0
25  
50  
75  
100  
125  
150  
0.3  
0.5  
0.7  
0.9  
1.1  
1.3  
Temperature ( °C)  
Instantaneous Forward Voltage (V)  
Figure 3. Typical Forward Characteristics Per Leg  
Figure 1. Derating Curve Output Rectified Current  
100  
1000.0  
Tj = 150°C  
80  
60  
40  
100.0  
10.0  
1.0  
Tj = 125°C  
20  
0.1  
0.0  
1.0 Cycle  
Tj = 25°C  
80  
0
20  
40  
60  
100  
1
100  
Number of Cycles at 60 H  
z
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics Per Leg  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
Per Leg  
www.vishay.com  
2
Document Number 88858  
12-Jul-05  
GSIB4A20 thru GSIB4A80  
Vishay General Semiconductor  
1000  
100  
100  
10  
10  
1
1
0.1  
1
10  
100  
0
0.01  
0.1  
1
10  
100  
Reverse Voltage (V)  
Figure 5. Typical Junction Capacitance Per Leg  
t, Heating Time (sec.)  
Figure 6. Typical Transient Thermal Impedance Per Leg  
Package outline dimensions in inches (millimeters)  
Case Style GSIB-3G  
0.118 x 45 Chamfer  
0.996 (25.3)  
0.150 (3.8)  
0.134 (3.4)  
0.972 (24.7)  
0.492  
(12.5)  
0.134 (3.4)  
0.122 (3.1)  
Dia.  
Detail Z  
enlarged  
0.602 (15.3)  
0.579 (14.7)  
0.382 (9.7)  
0.366 (9.3)  
0.059  
(1.50)  
Z
0.157 (4.0)  
+
0.057(1.45)  
0.041(1.05)  
0.709 (18.0)  
0.669 (17.0)  
0.146 (3.7)  
0.130 (3.3)  
0.709 (18.0)  
0.669 (17.0)  
0.078 (1.98)  
0.062 (1.58)  
0.012  
(0.30)  
0.189 (4.8)  
0.173 (4.4)  
0.042 (1.07)  
0.038 (0.96)  
Dia.  
0.126 (3.2)  
0.110 (2.8)  
0.303 (7.7)  
0.287 (7.3)  
(3x)  
Document Number 88858  
12-Jul-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

相关型号:

GSIB4A60N

Bridge Rectifier Diode, 2.3A, 600V V(RRM),
VISHAY

GSIB4A60N-E3/1

DIODE 2.3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge Rectifier Diode
VISHAY

GSIB4A60N/1

Bridge Rectifier Diode, 2.3A, 600V V(RRM),
VISHAY

GSIB4A80

Glass Passivated Single-In-Line Bridge Rectifier
VISHAY

GSIB4A80

SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 4.0A
GULFSEMI

GSIB4A80-E3/1

DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge Rectifier Diode
VISHAY

GSIB4A80-E3/51

DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge Rectifier Diode
VISHAY

GSIB4A80-E3/72

DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge Rectifier Diode
VISHAY

GSIB4A80/1-E3

BRIDGE RECTIFIER,1-PHASE FULL-WAVE,800V V(RRM),BR-7W
VISHAY

GSIB4A80/51

DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge Rectifier Diode
VISHAY

GSIB4A80/72-E3

DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge Rectifier Diode
VISHAY

GSIB4A80E3

DIODE 2.3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-3G, 4 PIN, Bridge Rectifier Diode
VISHAY