GSIB620/72-E3 [VISHAY]
DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode;
| 型号： | GSIB620/72-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode 局域网 二极管 |
| 文件： | 总4页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GSIB620 thru GSIB680
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 1500 V
• Solder dip 260 °C, 40 s
RMS
~
~
~
~
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Case Style GSIB-5S
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, industrial automation
applications.
PRIMARY CHARACTERISTICS
IF(AV)
6.0 A
MECHANICAL DATA
VRRM
IFSM
IR
200 V to 800 V
180 A
Case: GSIB-5S
Epoxy meets UL 94 V-0 flammability rating
10 µA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
VF
0.95 V
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
TJ max.
150 °C
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
GSIB620
GSIB640
400
GSIB660
600
GSIB680
800
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
200
V
V
V
VRMS
140
280
420
560
Maximum DC blocking voltage
VDC
200
400
600
800
Maximum average forward rectified
output current at
TC = 100 °C
A = 25 °C
6.0 (1)
2.8 (2)
IF(AV)
A
T
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC method)
IFSM
180
120
A
Rating for fusing (t < 8.3 ms)
I2t
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
Document Number: 88648
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
GSIB620 thru GSIB680
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS SYMBOL
GSIB620
GSIB640
GSIB660
GSIB680
UNIT
Maximum instantaneous forward
voltage drop per diode
3.0 A
VF
IR
0.95
V
Maximum DC reverse current at
rated DC blocking voltage per diode
T
T
A = 25 °C
A = 125 °C
10
250
µA
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
GSIB620
GSIB640
GSIB660
GSIB680
UNIT
RθJA
RθJC
22 (2)
Typical thermal resistance
°C/W
3.4 (1)
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
GSIB660-E3/45
7.0
45
20
Tube
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
10
210
180
150
120
90
Heatsink Mounting, TC
TJ = TJ Max.
Single Sine-Wave
8
6
4
P.C.B. Mounting, TA
60
2
0
30
1.0 Cycle
0
0
50
100
150
1
10
Number of Cycles at 60 Hz
100
Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88648
Revision: 15-Dec-08
GSIB620 thru GSIB680
Vishay General Semiconductor
100
10
1000
100
TJ = 150 °C
TJ = 25 °C
1
TJ = 125 °C
10
0.1
0.01
1
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
1000
100
TJ = 150 °C
100
10
TJ = 125 °C
10
1
1
0.1
TJ = 25 °C
0.01
0.1
0.01
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Heating Time (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in millimeters
Case Style GSIB-5S
4.6 0.2
3.6 0.2
30 0.3
+
2.5 0.2
2.7 0.2
2.2 0.2
1
0.1
0.7 0.1
7.5
0.2
7.5
0.2
10 0.2
Document Number: 88648
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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