首页 |元器件品牌

GSIB660N-M3/45 [VISHAY]

Single-Phase Single In-Line Bridge Rectifiers;
GSIB660N-M3/45
型号： GSIB660N-M3/45
厂家： VISHAY    VISHAY
描述：

Single-Phase Single In-Line Bridge Rectifiers
文件： 总3页 (文件大小：65K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
GSIB620N, GSIB640N, GSIB660N, GSIB680N  
www.vishay.com  
Vishay General Semiconductor  
Single-Phase Single In-Line Bridge Rectifiers  
FEATURES  
• UL recognition file number E54214  
• Thin single in-Iine package  
• Glass passivated chip junction  
• High surge current capability  
• High case dielectric strength of 1500 VRMS  
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
~
~
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
~
Case Style GSIB-5S  
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for switching power supply, home appliances, office  
equipment, industrial automation applications.  
PRIMARY CHARACTERISTICS  
Package  
GSIB-5S  
6.0 A  
MECHANICAL DATA  
IF(AV)  
Case: GSIB-5S  
VRRM  
200 V, 400 V, 600 V, 800 V  
Molding compound meets UL 94 V-0 flammability rating  
IFSM  
180 A  
10 μA  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
IR  
VF  
commercial grade  
0.95 V  
150 °C  
In-Line  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
TJ max.  
Diode variations  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 in-lbs) maximum  
Recommended Torque: 5.7 cm-kg (5 in-lbs)  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL GSIB620N  
GSIB640N  
400  
GSIB660N  
600  
GSIB680N  
800  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
V
V
V
280  
420  
560  
Maximum DC blocking voltage  
400  
600  
800  
(1)  
T
C = 100 °C  
IF(AV)  
6.0  
2.8  
Maximum average forward rectified  
output current at  
A
A
(2)  
TA = 25 °C  
IF(AV)  
Peak forward surge current single sine-wave  
IFSM  
180  
120  
superimposed on rated load (JEDEC method)  
Rating for fusing (t < 8.3 ms)  
I2t  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Notes  
(1)  
Unit case mounted on aluminum plate heatsink  
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length  
(2)  
Revision: 26-Apr-13  
Document Number: 89385  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
GSIB620N, GSIB640N, GSIB660N, GSIB680N  
www.vishay.com  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS SYMBOL GSIB620N GSIB640N GSIB660N GSIB680N  
UNIT  
Maximum instantaneous  
IF = 3.0 A  
VF  
IR  
0.95  
V
forward voltage drop per diode  
TA = 25 °C  
10  
Maximum DC reverse current at  
rated DC blocking voltage per diode  
μA  
TA = 125 °C  
250  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL GSIB620N GSIB640N GSIB660N GSIB680N  
UNIT  
(2)  
RJA  
RJC  
22  
Maximum thermal resistance  
°C/W  
(1)  
3.4  
Notes  
(1)  
(2)  
(3)  
Unit case mounted on aluminum plate heatsink  
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length  
Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
GSIB660N-M3/45  
7.0  
45  
20  
Tube  
RATINGS AND CHARACTERISTICS CURVES  
(TA = 25 °C unless otherwise noted)  
10  
210  
180  
150  
120  
90  
Heatsink Mounting, TC  
TJ = TJ Max.  
Single Sine-Wave  
8
6
4
PCB Mounting, TA  
60  
2
0
30  
1.0 Cycle  
10  
0
1
100  
0
50  
100  
150  
Number of Cycles at 60 Hz  
Temperature (°C)  
Fig. 1 - Derating Curve Output Rectified Current  
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge  
Current Per Diode  
Revision: 26-Apr-13  
Document Number: 89385  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
GSIB620N, GSIB640N, GSIB660N, GSIB680N  
www.vishay.com  
Vishay General Semiconductor  
100  
10  
1000  
100  
TJ = 150 °C  
TJ = 25 °C  
1
TJ = 125 °C  
10  
0.1  
0.01  
1
0.1  
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Fig. 3 - Typical Forward Characteristics Per Diode  
Fig. 5 - Typical Junction Capacitance Per Diode  
1000  
100  
10  
1
TJ = 150 °C  
100  
10  
TJ = 125 °C  
1
0.1  
TJ = 25 °C  
0.01  
0.1  
0.01  
20  
40  
60  
80  
100  
0.1  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
t - Heating Time (s)  
Fig. 4 - Typical Reverse Characteristics Per Diode  
Fig. 6 - Typical Transient Thermal Impedance Per Diode  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
Case Style GSIB-5S  
4.6 0.2  
3.6 0.2  
30 0.3  
+
2.5 0.2  
2.7 0.2  
2.2 0.2  
1
0.1  
0.7 0.1  
7.5  
0.2  
7.5  
0.2  
10 0.2  
Revision: 26-Apr-13  
Document Number: 89385  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

相关型号：

GSIB680

 Glass Passivated Single-Phase Bridge Rectifier
VISHAY

GSIB680

 SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
GULFSEMI

GSIB680-E3

 DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode
VISHAY

GSIB680-E3/45

 RECTFR BRIDGE SGL 800V 2.8A 4PIN CASE GSIB-5S - Rail/Tube
VISHAY

GSIB680-E3/51

 DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode
VISHAY

GSIB680-E3/72

 DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode
VISHAY

GSIB680/51

 Bridge Rectifier Diode, 1 Phase, 2.8A, 800V V(RRM), Silicon, PLASTIC, CASE GSIB-5S, 4 PIN
VISHAY

GSIB680/51-E3

 DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode
VISHAY

GSIB680/72

 Bridge Rectifier Diode, 1 Phase, 2.8A, 800V V(RRM), Silicon, PLASTIC, CASE GSIB-5S, 4 PIN
VISHAY

GSIB680/72-E3

 DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode
VISHAY

GSIB680E3

 DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode
VISHAY

GSIB680N-M3/45

 DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, GSIB-5S, 4 PIN, Bridge Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明