GSOT04-G-08 [VISHAY]
DIODE 429 W, BIDIRECTIONAL, SILICON, TVS DIODE, GREEN PACKAGE-3, Transient Suppressor;
| 型号： | GSOT04-G-08 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 429 W, BIDIRECTIONAL, SILICON, TVS DIODE, GREEN PACKAGE-3, Transient Suppressor 局域网 光电二极管 电视 |
| 文件： | 总8页 (文件大小：338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GSOT03 to GSOT36
Vishay Semiconductors
Single-Line ESD-Protection in SOT-23
FEATURES
ꢀ
• Single-line ESD-protection device
• ESD-protection acc. IEC 61000-4-2
ꢀ0 kV contact discharge
ꢀ0 kV air discharge
1
2
• Space saving SOT-2ꢀ package
• AEC-Q101 qualified
• eꢀ - Sn
20421
20512
1
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MARKING (example only)
YYY
20357
YYY = type code (see table below)
XX = date code
ORDERING INFORMATION
ENVIRONMENTAL
STATUS
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER
QUANTITY
DEVICE NAME
GSOT0ꢀ
GSOT04
GSOT05
GSOT08
GSOT12
GSOT15
GSOT24
GSOTꢀ6
ORDERING CODE
Standard
Green
GSOT0ꢀ-GS08
GSOT0ꢀ-G-08
GSOT04-GS08
GSOT04-G-08
GSOT05-GS08
GSOT05-G-08
GSOT08-GS08
GSOT08-G-08
GSOT12-GS08
GSOT12-G-08
GSOT15-GS08
GSOT15-G-08
GSOT24-GS08
GSOT24-G-08
GSOTꢀ6-GS08
GSOTꢀ6-G-08
ꢀ000
ꢀ000
ꢀ000
ꢀ000
ꢀ000
ꢀ000
ꢀ000
ꢀ000
15 000
15 000
15 000
15 000
15 000
15 000
15 000
15 000
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 85807
Rev. 1.9, 08-Jun-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
1
GSOT03 to GSOT36
Vishay Semiconductors
Single-Line ESD-Protection in
SOT-2ꢀ
PACKAGE DATA
MOLDING
DEVICE
NAME
PACKAGE
NAME
TYPE
CODE
ENVIRONMENTAL
COMPOUND
FLAMMABILITY SENSITIVITY LEVEL
RATING
MOISTURE
SOLDERING
CONDITIONS
WEIGHT
STATUS
0ꢀ
0ꢀG
04
Standard
Green
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
MSL level 1
(according
J-STD-020)
GSOT0ꢀ
GSOT04
GSOT05
GSOT08
GSOT12
GSOT15
GSOT24
GSOTꢀ6
SOT-2ꢀ
SOT-2ꢀ
SOT-2ꢀ
SOT-2ꢀ
SOT-2ꢀ
SOT-2ꢀ
SOT-2ꢀ
SOT-2ꢀ
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
Standard
Green
MSL level 1
(according
J-STD-020)
04G
05
Standard
Green
MSL level 1
(according
J-STD-020)
05G
08
Standard
Green
MSL level 1
(according
J-STD-020)
08G
12
Standard
Green
MSL level 1
(according
J-STD-020)
12G
15
Standard
Green
MSL level 1
(according
J-STD-020)
15G
24
Standard
Green
MSL level 1
(according
J-STD-020)
24G
ꢀ6
Standard
Green
MSL level 1
(according
J-STD-020)
ꢀ6G
ABSOLUTE MAXIMUM RATINGS GSOT03
PARAMETER
TEST CONDITIONS
SYMBOL
IPPM
VALUE
UNIT
Pin ꢀ to 1
Peak pulse current
ꢀ0
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin ꢀ to 1
Peak pulse power
ESD immunity
PPP
ꢀ69
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT04
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin ꢀ to 1
Peak pulse current
IPPM
ꢀ0
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin ꢀ to 1
Peak pulse power
ESD immunity
PPP
429
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
www.vishay.com
2
For technical questions, contact: ESDprotection@vishay.com
Document Number: 85807
Rev. 1.9, 08-Jun-10
GSOT03 to GSOT36
Vishay Semiconductors
Single-Line ESD-Protection in
SOT-2ꢀ
ABSOLUTE MAXIMUM RATINGS GSOT05
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin ꢀ to 1
Peak pulse current
IPPM
ꢀ0
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin ꢀ to 1
Peak pulse power
ESD immunity
PPP
480
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT08
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin ꢀ to 1
Peak pulse current
IPPM
18
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin ꢀ to 1
Peak pulse power
ESD immunity
PPP
ꢀ45
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT12
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin ꢀ to 1
Peak pulse current
IPPM
12
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin ꢀ to 1
Peak pulse power
ESD immunity
PPP
ꢀ12
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT15
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin ꢀ to 1
Peak pulse current
IPPM
8
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin ꢀ to 1
Peak pulse power
ESD immunity
PPP
2ꢀ0
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT24
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin ꢀ to 1
Peak pulse current
IPPM
5
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin ꢀ to 1
Peak pulse power
ESD immunity
PPP
2ꢀ5
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
Document Number: 85807
Rev. 1.9, 08-Jun-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
ꢀ
GSOT03 to GSOT36
Vishay Semiconductors
Single-Line ESD-Protection in
SOT-2ꢀ
ABSOLUTE MAXIMUM RATINGS GSOT36
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin ꢀ to 1
Peak pulse current
IPPM
ꢀ.5
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin ꢀ to 1
Peak pulse power
ESD immunity
PPP
248
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
ꢀ0
ꢀ0
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
- 40 to + 125
- 55 to + 150
TSTG
BiAs-MODE (1-line bidirectional asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground
and pin ꢀ connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line
is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1
and pin ꢀ offer a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and
asymmetrical (BiAs).
L1
3
BiAs
1
2
Ground
20422
ELECTRICAL CHARACTERISTICS GSOT03
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
Number of lines which can be protected
at IR = 100 μA
-
ꢀ.ꢀ
-
1
-
Reverse working voltage
Reverse current
-
at VR = ꢀ.ꢀ V
-
100
-
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
4
-
4.6
5.7
10
1
at IPP = 1 A
7.5
12.ꢀ
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = ꢀ0 A
at IPP = 1 A
-
V
-
V
at IPP = IPPM = ꢀ0 A
at VR = 0 V; f = 1 MHz
at VR = 1.6 V; f = 1 MHz
-
4.5
420
260
V
-
600
-
pF
pF
CD
-
Note
BiAs mode (between pin ꢀ and pin 1)
•
www.vishay.com
4
For technical questions, contact: ESDprotection@vishay.com
Document Number: 85807
Rev. 1.9, 08-Jun-10
GSOT03 to GSOT36
Vishay Semiconductors
Single-Line ESD-Protection in
SOT-2ꢀ
ELECTRICAL CHARACTERISTICS GSOT04
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 20 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
4
-
1
-
Reverse working voltage
Reverse current
-
at VR = 4 V
-
20
-
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
5
-
6.1
7.5
11.2
1
at IPP = 1 A
9
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = ꢀ0 A
at IPP = 1 A
-
14.ꢀ
1.2
-
V
-
V
at IPP = IPPM = ꢀ0 A
at VR = 0 V; f = 1 MHz
at VR = 2 V; f = 1 MHz
-
4.5
ꢀ10
200
V
-
450
-
pF
pF
CD
-
Note
•
BiAs mode (between pin ꢀ and pin 1)
ELECTRICAL CHARACTERISTICS GSOT05
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
1
UNIT
lines
V
Protection paths
Number of lines which can be protected
at IR = 10 μA
-
5
-
Reverse working voltage
Reverse current
-
-
at VR = 5 V
-
10
-
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
6
-
6.8
7
at IPP = 1 A
8.7
16
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = ꢀ0 A
at IPP = 1 A
-
12
1
V
-
V
at IPP = IPPM = ꢀ0 A
at VR = 0 V; f = 1 MHz
at VR = 2.5 V; f = 1 MHz
-
4.5
260
150
V
-
ꢀ50
-
pF
pF
CD
-
Note
BiAs mode (between pin ꢀ and pin 1)
•
ELECTRICAL CHARACTERISTICS GSOT08
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 5 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
8
-
1
-
Reverse working voltage
Reverse current
-
at VR = 8 V
-
5
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
9
-
10
10.7
15.2
1
-
at IPP = 1 A
1ꢀ
19.2
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 18 A
at IPP = 1 A
-
V
-
V
at IPP = IPPM = 18 A
at VR = 0 V; f = 1 MHz
at VR = 4 V; f = 1 MHz
-
ꢀ
V
-
160
80
250
-
pF
pF
CD
-
Note
•
BiAs mode (between pin ꢀ and pin 1)
Document Number: 85807
Rev. 1.9, 08-Jun-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
5
GSOT03 to GSOT36
Vishay Semiconductors
Single-Line ESD-Protection in
SOT-2ꢀ
ELECTRICAL CHARACTERISTICS GSOT12
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
Number of lines which can be protected
at IR = 1 μA
-
1
-
Reverse working voltage
Reverse current
12
-
at VR = 12 V
-
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
1ꢀ.5
15
15.4
21.2
1
-
at IPP = 1 A
-
-
-
-
-
-
18.7
26
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 12 A
at IPP = 1 A
V
V
at IPP = IPPM = 12 A
at VR = 0 V; f = 1 MHz
at VR = 6 V; f = 1 MHz
2.2
115
50
V
150
-
pF
pF
CD
Note
•
BiAs mode (between pin ꢀ and pin 1)
ELECTRICAL CHARACTERISTICS GSOT15
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
Number of lines which can be protected
at IR = 1 μA
-
1
-
Reverse working voltage
Reverse current
15
-
at VR = 15 V
-
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
16.5
18
19.4
24.8
1
-
at IPP = 1 A
-
-
-
-
-
-
2ꢀ.5
28.8
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 8 A
at IPP = 1 A
V
V
at IPP = IPPM = 8 A
at VR = 0 V; f = 1 MHz
at VR = 7.5 V; f = 1 MHz
1.8
90
ꢀ5
V
120
-
pF
pF
CD
Note
BiAs mode (between pin ꢀ and pin 1)
•
ELECTRICAL CHARACTERISTICS GSOT24
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 1 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
24
-
1
-
Reverse working voltage
Reverse current
-
at VR = 24 V
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
27
-
ꢀ0
ꢀ4
41
1
-
at IPP = 1 A
41
47
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 5 A
at IPP = 1 A
-
V
-
V
at IPP = IPPM = 5 A
at VR = 0 V; f = 1 MHz
at VR = 12 V; f = 1 MHz
-
1.4
65
20
V
-
80
-
pF
pF
CD
-
Note
•
BiAs mode (between pin ꢀ and pin 1)
www.vishay.com
6
For technical questions, contact: ESDprotection@vishay.com
Document Number: 85807
Rev. 1.9, 08-Jun-10
GSOT03 to GSOT36
Vishay Semiconductors
Single-Line ESD-Protection in
SOT-2ꢀ
ELECTRICAL CHARACTERISTICS GSOT36
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 1 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
ꢀ6
-
1
-
Reverse working voltage
Reverse current
-
at VR = ꢀ6 V
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
ꢀ9
-
4ꢀ
49
59
1
-
at IPP = 1 A
60
71
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = ꢀ.5 A
at IPP = 1 A
-
V
-
V
at IPP = IPPM = ꢀ.5 A
at VR = 0 V; f = 1 MHz
at VR = 18 V; f = 1 MHz
-
1.ꢀ
52
12
V
-
65
-
pF
pF
CD
-
Note
BiAs mode (between pin ꢀ and pin 1)
•
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
ꢀ.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
0.5 (0.020)
0.ꢀ (0.012)
0.45 (0.018)
0.ꢀ5 (0.014)
0.45 (0.018)
0.ꢀ5 (0.014)
2.6 (0.102)
2.ꢀ5 (0.09ꢀ)
0.45 (0.018)
0.ꢀ5 (0.014)
Foot print recommendation:
0.7 (0.028)
1 (0.0ꢀ9)
0.9 (0.0ꢀ5)
1 (0.0ꢀ9)
0.9 (0.0ꢀ5)
0.95 (0.0ꢀ7)
0.95 (0.0ꢀ7)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 2ꢀ.Sept.2009
17418
Document Number: 85807
Rev. 1.9, 08-Jun-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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