GSOT12/E9 [VISHAY]
Trans Voltage Suppressor Diode, 12V V(RWM), Unidirectional,;
| 型号： | GSOT12/E9 |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 12V V(RWM), Unidirectional, |
| 文件： | 总3页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GSOT03 thru GSOT36C
New Product
Vishay Semiconductors
formerly General Semiconductor
Miniature Transient Voltage Suppressors
Mounting Pad Layout
TO-236AB (SOT-23)
0.031 (0.8)
.122 (3.1)
.110 (2.8)
0.035 (0.9)
.016 (0.4)
Top View
3
0.079 (2.0)
0.037 (0.95)
0.037 (0.95)
1
2
Dimensions in inches
and (millimeters)
.037(0.95)
.037(0.95)
GS0Txx
GS0TxxC
Top
View
.102 (2.6)
.094 (2.4)
.016 (0.4) .016 (0.4)
Single
Dual
Mechanical Data
Features
• Transient protection for data lines as per
IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 1000-4-4 (EFT) 40A (tp = 5/50ns)
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Terminals: Solderable per MIL-STD-750, method 2026
IEC 1000-4-5 (Lightning) 24A (tp = 8/20µs)
High temperature Soldering Guaranteed:
230°C for 10 seconds.
• Bidirectional or unidirectional configurations available
• Devices with a "C" suffix have dual diodes, which
can protect two unidirectional lines with pin 3 used
as a common anode connection, or a single
bidirectional line between pins 1 & 2.
Packaging Codes – Options:
E8 – 10K per 13” reel (8mm tape)
E9 – 3K per 7” reel (8mm tape)
• Ideal for ESD Protection
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
W
Peak Power Dissipation(1) for 8/20µs pulse
Forward Surge Current for single 8.3ms half sine wave
Operating and Storage Temperature Range
Ppk
300
IFSM
10
A
TJ, Tstg
–55 to +150
°C
Notes:
(1) Nonrepetitive current pulse and derate above TA = 25°C. For GSOT03, GSOT03C, GSOT04, GSOT04C the peak power dissipation is 270W.
(2) FR-5 = 1.0 x 0.75 x 0.62 in.
Document Number 88347
20-Jun-02
www.vishay.com
1
GSOT03 thru GSOT36C
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Part
Device
Marking
Code
Rated
Stand-off
Voltage
Minimum
Breakdown
Voltage
@1mA
Maximum
Clamping
Voltage
@IP = 1A (2)
VC
Maximum
Clamping
Voltage
@IP = 5A (2)
VC
Maximum
Leakage
Current
@VWM
ID
Maximum
Capacitance
Number(1)
@0V, 1MHZ
VWM
V(BR)
C
Volts
Volts
Volts
Volts
µA
pF
GSOT03
GSOT03C
GSOT04
GSOT04C
GSOT05
GSOT05C
GSOT08
GSOT08C
GSOT12
GSOT12C
GSOT15
GSOT15C
GSOT24
GSOT24C
GSOT36
GSOT36C
03
03C
04
3.3
3.3
4.0
4.5
6.5
7.0
7.5
125
125
125
125
100
100
10
10
2
800
600
800
600
550
400
400
350
185
150
140
100
83
9.0
4.0
5.0
8.5
10.5
10.5
12.5
12.5
15.0
15.0
28.0
28.0
35.0
35.0
60.0
60.0
75.0
75.0
04C
05
4.0
5.0
8.5
5.0
6.0
9.8
05C
08
5.0
6.0
9.8
8.0
8.5
13.4
13.4
19.0
19.0
24.0
24.0
43.0
43.0
60.0
60.0
08C
12
8.0
8.5
12.0
12.0
15.0
15.0
24.0
24.0
36.0
36.0
13.3
13.3
16.7
16.7
26.7
26.7
40
12C
15
2
1
15C
24
1
1
24C
36
1
63
1
80
36C
40
1
60
Note: (1) Part numbers with a “C” suffix are bidirectional devices (dual junction)
(2) 8/20µs waveform used (see figure 2)
www.vishay.com
2
Document Number 88347
20-Jun-02
GSOT03 thru GSOT36C
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Non-Repetitive Peak Pulse Power
vs. Pulse Time
10000
1000
100
300W, 8/20µs waveshape
10
0.1
1.0
10
100
1000
10000
td — Pulse Duration (µs)
Fig. 3 – Power Derating Curve
Fig. 2 – Pulse Waveform
100
80
110
100
90
Peak Pulse Power
8/20µs
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
80
70
60
60
50
40
40
IPP
2
td
=
30
20
10
0
20
0
Average Power
25
50
125
150
0
75
100
5
10
25
0
15
20
30
TL — Lead Temperature °C
t — Time (µs)
Document Number 88347
20-Jun-02
www.vishay.com
3
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