GTZ5.1 [VISHAY]
Zener Diode, 5.1V V(Z), 5.19%, 0.2W, Silicon, Unidirectional;
| 型号： | GTZ5.1 |
| 厂家： | 
VISHAY |
| 描述： | Zener Diode, 5.1V V(Z), 5.19%, 0.2W, Silicon, Unidirectional |
| 文件： | 总3页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GTZ Series for ESD Protection
New Product
Vishay Semiconductors
formerly General Semiconductor
Zener Diodes
VZ Range 5.1 to 10V
Power Dissipation 200mW
SOD-323
Mounting Pad Layout
.012 (0.3)
Cathode Band
0.055
(1.40)
0.062
(1.60)
Top View
Dimensions in inches
and (millimeters)
.059 (1.5)
.043 (1.1)
.010 (0.25)
min.
Mechanical Data
Features
Case: SOD-323 Plastic Package
Weight: Approx. 0.004g
Marking Codes: See table on next page
• Silicon Planar Power Zener Diodes
• Low Zener impedence and low leakage current
• Popular in Asian designs
• Compact surface mount device
• Ideal for automated mounting
• Complies with IEC 61000-4-2 for ESD protection
Packaging Codes/Options:
D5/10K per 13” reel (8mm tape)
D6/3K per 7” reel (8mm tape)
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
mW
°C
Power Dissipation
Junction Temperature
Storage Temperature Range
Pd
200
Tj
150
Tstg
–55 to + 150
°C
Document Number 88351
20-May-02
www.vishay.com
1
GTZ Series for ESD Protection
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TA = 25°C unless otherwise noted)
Marking
Code
Zener Voltage
ESD-
Reverse Current
Dynamic Resistance
Type
VZ (V)(1)
IZT (mA)
Capability(2)
min
4.84
5.31
5.86
6.47
7.06
7.76
8.56
9.45
max
IR(max) (µA) VRT (V)
rd(max) (Ω) IZT (mA) (kV) (min)
GTZ5.1
GTZ5.6
GTZ6.2
GTZ6.8
GTZ7.5
GTZ8.2
GTZ9.1
GTZ10
G1
G2
G3
G4
G5
G6
G7
G8
5.37
5.92
6.53
7.14
7.84
8.64
9.55
10.55
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
130
80
50
30
30
30
30
30
5
5
5
5
5
5
5
5
30
30
30
30
30
30
30
30
Notes:
(1) Tested with pulse (PW = 40ms).
(2) C = 150pF, R = 330 ohms, Both forward and reverse direction 10 pulse (contact mode)
www.vishay.com
2
Document Number 88351
20-May-02
GTZ Series for ESD Protection
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – VZ vs IZ (GTZ6V8)
Fig. 2 – V vs I (GTZ9V1)
Z Z
100
100
T
= 25°C
J
T
= 25°C
J
T
= 85°C
J
T
= 85°C
T = 100°C
J
J
10
10
T
= 100°C
J
T
= 150°C
J
1
1
T
= 150°C
J
0.1
8.6
0.1
6.6
6.8
7
7.2
7.4
8.8
9
9.2
9.4
9.6
9.8
10
10.2
VZ (V)
VZ (V)
Fig. 3 – R vs I (GTZ6V8)
Fig. 4 – R vs I (GTZ9V1)
Z
Z
Z
Z
1000
100
10
1
100
10
1
T
= 150°C
J
T
= 150°C
J
T
= 100°C
J
T = 25°C
J
T
= 100°C
J
T
= 25°C
J
0.1
0.1
0
20
40
60
80
100
0
20
40
60
80
100
IZ (mA)
IZ (mA)
Fig. 5 – V vs I (GTZ6V8)
Fig. 6 – V vs I (GTZ9V1)
F F
F
F
100
10
100
10
T
= 150°C
T = 150°C
J
J
T
= 100°C
T = 100°C
J
T
= 85°C
T = 85°C
J
J
J
1
1
T
= 25°C
T
= 25°C
J
J
0.1
0.01
0.1
0.01
300
400
500
600
700
800
900
1000
300
400
500
600
700
800
900
1000
Vf (mV)
Vf (mV)
Document Number 88351
20-May-02
www.vishay.com
3
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