GZF15C [VISHAY]

Zener Diodes; 齐纳二极管
GZF15C
型号: GZF15C
厂家: VISHAY    VISHAY
描述:

Zener Diodes
齐纳二极管

二极管 齐纳二极管 测试
文件: 总6页 (文件大小:147K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GZF3V6C to GZF91C  
VISHAY  
Vishay Semiconductors  
Zener Diodes  
Features  
• Silicon Planar Power Zener Diodes.  
• Low profile surface-mount package.  
• Low leakage current  
17249  
• High temperature soldering:  
260 °C/10 sec. at terminals  
Packaging codes/options:  
GS18 - 10 K per 13 " reel, (8 mm tape), 50 K/box  
GS08 - 3 K per 7 " reel, (8 mm tape), 30 K/box  
Weight: approx. 0.01 g  
Mechanical Data  
Case: JEDEC DO-219AB (SMF®) Plastic Case  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Symbol  
Value  
Unit  
mW  
Zener current (see Table  
"Characteristics")  
see  
page 2  
1)  
Power dissipation  
T = 25 °C  
P
tot  
A
800  
1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (40 µm thick)  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
180  
Unit  
K/W  
Thermal resistance junction to  
R
θJA  
1)  
ambient air  
Maximum junction temperature  
Storage temperature range  
T
150  
°C  
°C  
j
T
- 55 to + 150  
STG  
1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (40 µm thick)  
Document Number 85769  
Rev. 1.7, 28-Jan-04  
www.vishay.com  
1
GZF3V6C to GZF91C  
Vishay Semiconductors  
VISHAY  
Electrical Characteristics  
Maximum V = 1.2 V at I = 200 mA  
F
F
Partnumber  
Marking  
Code  
Zener Voltage  
Differential  
Resistance  
Temperature  
Coefficient  
Test  
Current  
Reverse Current at  
Reverse Voltage  
1)  
Range  
V
@ I  
V
r
@ I  
α
@ I  
I
I
V
R
Z
ZT  
dif  
Z
Z
Z
ZT  
R
%/°C  
mA  
µA  
max  
100  
50  
25  
10  
5
V
min  
max  
typ  
4
max  
min  
-0.14  
-0.14  
-0.12  
-0.1  
max  
GZF3V6C  
GZF3V9C  
GZF4V3C  
GZF4V7C  
GZF5V1C  
GZF5V6C  
GZF6V2C  
GZF6V8C  
GZF7V5C  
GZF8V2C  
GZF9V1C  
GZF10C  
GZF11C  
GZF12C  
GZF13C  
GZF15C  
GZF16C  
GZF18C  
GZF20C  
GZF22C  
GZF24C  
GZF27C  
GZF30C  
GZF33C  
GZF36C  
GZF39C  
GZF43C  
GZF47C  
GZF51C  
GZF56C  
GZF62C  
GZF68C  
GZF75C  
GZF82C  
GZF91C  
W5  
W6  
W7  
W8  
W9  
WA  
WB  
WC  
WD  
WE  
WF  
WG  
WH  
WI  
3.4  
3.7  
4
3.8  
4.1  
4.6  
5
8
8
-0.04  
-0.04  
-0.02  
0
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
50  
1
1
4
4
7
1
4.4  
4.8  
5.2  
5.8  
6.4  
7
3
7
1
5.4  
6
3
6
-0.08  
-0.04  
-0.01  
0
-0.2  
0.04  
0.06  
0.07  
0.07  
0.08  
0.08  
0.09  
0.1  
1
2
4
10  
5
2
6.6  
7.2  
7.9  
8.7  
9.6  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
28.9  
32  
2
3
2
1
3
10  
50  
10  
10  
7
3
1
2
0
3
7.7  
8.5  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
1
2
0.03  
0.03  
0.05  
0.05  
0.05  
0.05  
0.05  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.07  
0.07  
0.07  
0.07  
0.08  
0.08  
0.08  
0.08  
0.09  
3
2
4
5
2
4
50  
7.5  
8.2  
9.1  
10  
11  
12  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
4
7
50  
4
4
7
0.1  
50  
3
WK  
WL  
WM  
WN  
WO  
WP  
WR  
WS  
WT  
WU  
WW  
WX  
WY  
WZ  
X1  
5
10  
10  
15  
15  
15  
15  
15  
15  
15  
15  
40  
40  
45  
45  
60  
60  
80  
80  
100  
100  
200  
0.1  
50  
2
5
0.1  
50  
1
6
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.12  
0.12  
0.12  
0.12  
0.13  
0.13  
0.13  
0.13  
0.13  
25  
1
6
25  
1
6
25  
1
6
25  
1
7
25  
1
7
25  
1
8
25  
1
31  
35  
8
25  
1
34  
38  
21  
21  
24  
24  
25  
25  
25  
25  
30  
30  
60  
10  
1
37  
41  
10  
1
40  
46  
10  
1
44  
50  
10  
1
48  
54  
10  
1
X2  
52  
60  
10  
1
X3  
58  
66  
10  
1
X4  
64  
72  
10  
1
X5  
70  
79  
10  
1
X6  
77  
87  
10  
1
X7  
85  
96  
5
1
1)  
Pulse test: tp 5 ms  
www.vishay.com  
2
Document Number 85769  
Rev. 1.7, 28-Jan-04  
GZF3V6C to GZF91C  
VISHAY  
Vishay Semiconductors  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
mA  
3
10  
2
10  
10  
= 100 °C  
T
I
J
F
1
= 25 °C  
T
J
-1  
10  
-2  
10  
-3  
10  
-4  
10  
-5  
10  
0.8  
0.2  
1V  
0.6  
F
0
0.4  
17364  
V
Figure 1. Forward characteristics  
mW  
800  
600  
P
tot  
400  
200  
0
200 °C  
100  
T
17365  
amb  
Figure 2. Admissible Power Dissipation vs. Ambient Temperature  
pF  
1000  
= 25 °C  
T
J
7
5
4
3
V
= 1V  
R
V
= 2V  
R
2
C
tot  
100  
7
V
= 1V  
R
5
4
3
V
R
= 2V  
2
10  
1
5
10  
5
4
4
2
3
2
3
100 V  
17366  
V
Z
Figure 3. Capacitance vs. Zener Voltage  
Document Number 85769  
Rev. 1.7, 28-Jan-04  
www.vishay.com  
3
GZF3V6C to GZF91C  
Vishay Semiconductors  
VISHAY  
Package Dimensions in mm  
Cathode Band  
T op View  
1.8 0.1  
1.0 0.2  
2.8  
0.1  
5
0.05 - 0.30  
0.98 0.1  
5
Z
0.60 0.25  
Detail  
Z
enlarged  
0.00 - 0.10  
3.7 0.2  
1.6  
1.3  
1.4  
17247  
www.vishay.com  
4
Document Number 85769  
Rev. 1.7, 28-Jan-04  
GZF3V6C to GZF91C  
VISHAY  
Vishay Semiconductors  
Blistertape für SMF  
PS  
18513  
Document Number 85769  
Rev. 1.7, 28-Jan-04  
www.vishay.com  
5
GZF3V6C to GZF91C  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
www.vishay.com  
6
Document Number 85769  
Rev. 1.7, 28-Jan-04  

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