H11B3-X001 [VISHAY]

Darlington Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, DIP-6;
H11B3-X001
型号: H11B3-X001
厂家: VISHAY    VISHAY
描述:

Darlington Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, DIP-6

输出元件 光电
文件: 总7页 (文件大小:113K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
H11B1, H11B2, H11B3  
Vishay Semiconductors  
Optocoupler, Photodarlington Output, High Gain,  
with Base Connection  
FEATURES  
• Isolation test voltage: 5300 VRMS  
1
6
A
C
B
C
E
• Coupling capacitance, 0.5 pF  
• Lead (Pb)-free component  
5
4
2
3
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
NC  
i179005  
AGENCY APPROVALS  
• UL1577, file no. E52744 system code J  
DESCRIPTION  
The H11B1, H11B2, H11B3 are industry standard  
optocouplers, consisting of a gallium arsenide infrared LED  
and a silicon photodarlington.  
• DIN EN 60747-5-5 (VDE 0884) available with option 1  
ORDER INFORMATION  
PART  
REMARKS  
H11B1  
CTR > 500 %, DIP-6  
H11B2  
CTR > 200 %, DIP-6  
H11B3  
CTR > 100 %, DIP-6  
H11B1-X007  
H11B1-X009  
H11B2-X009  
CTR > 500 %, SMD-6 (option 7)  
CTR > 500 %, SMD-6 (option 9)  
CTR > 200 %, SMD-6 (option 9)  
Note  
For additional information on the available options refer to option information.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
INPUT  
Reverse voltage  
VR  
IF  
3
V
mA  
Forward continuous current  
Power dissipation  
60  
Pdiss  
100  
1.33  
mW  
Derate linearly from 25 °C  
OUTPUT  
mW/°C  
Collector emitter breakdown voltage  
Emitter collector breakdown voltage  
Collector base breakdown voltage  
Collector current (continuous)  
Power dissipation  
BVCEO  
BVECO  
BVCBO  
IC  
25  
7
V
V
30  
100  
150  
2
V
mA  
mW  
mW/°C  
Pdiss  
Derate linearly from 25 °C  
Document Number: 83609  
Rev. 1.6, 10-Dec-08  
For technical questions, contact: optocoupler.answers@vishay.com  
www.vishay.com  
283  
H11B1, H11B2, H11B3  
Optocoupler, Photodarlington  
Vishay Semiconductors  
Output, High Gain,  
with Base Connection  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
COUPLER  
Isolation test voltage  
between emitter and detector  
VISO  
5300  
VRMS  
Creepage distance  
Clearance distance  
7  
7  
mm  
mm  
Comparative tracking index per  
DIN IEC 112/VDE 0303, part 1  
CTI  
175  
V
IO = 500 V, Tamb = 25 °C  
RIO  
RIO  
Ptot  
1012  
1011  
Ω
Ω
Isolation resistance  
V
IO = 500 V, Tamb = 100 °C  
Total package dissipation (LED plus detector)  
Derate linearly from 25 °C  
260  
mW  
mW/°C  
°C  
3.5  
Storage temperature  
Tstg  
- 55 to + 150  
- 55 to + 100  
10  
Operating temperature  
Tamb  
°C  
Lead soldering time at 260 °C  
s
Note  
Tamb = 25 °C, unless otherwise specified.  
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied  
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for  
extended periods of the time can adversely affect reliability.  
ELECTRICAL CHARACTERISTCS  
PARAMETER  
INPUT  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
H11B1  
H11B2  
H11B3  
VF  
VF  
VF  
IR  
1.1  
1.1  
1.1  
1.5  
1.5  
1.5  
10  
V
V
IF = 50 mA  
IF = 10 mA  
Forward voltage  
V
Reverse current  
VR = 3 V  
µA  
pF  
Junction capacitance  
VF = 0 V, f = 1 MHz  
Cj  
50  
OUTPUT  
Collector emitter breakdown voltage  
Emitter collector breakdown voltage  
Collector base breakdown voltage  
Collector emitter leakage current  
COUPLER  
I
C = 1 mA, IF = 0 mA  
BVCEO  
BVECO  
BVCBO  
ICEO  
30  
7
V
V
I
E = 100µA, IF = 0 mA  
IC = 100 µA , IF = 0 mA  
CE = 10 V, IF = 0 mA  
30  
V
V
100  
1
nA  
Saturation voltage collector-emitter  
Capacitance (input to output)  
I
C = 1 mA, IC = 1 mA  
VCEsat  
CIO  
V
0.5  
pF  
Note  
amb = 25 °C, unless otherwise specified.  
T
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering  
evaluations. Typical values are for information only and are not part of the testing requirements.  
CURRENT TRANSFER RATIO  
PARAMETER  
TEST CONDITION  
PART  
H11B1  
H11B2  
H11B3  
SYMBOL  
CTRDC  
CTRDC  
CTRDC  
MIN.  
500  
200  
100  
TYP.  
MAX.  
UNIT  
%
DC current transfer ratio  
V
CE = 5 V, IF = 1 mA  
%
%
www.vishay.com  
284  
For technical questions, contact: optocoupler.answers@vishay.com  
Document Number: 83609  
Rev. 1.6, 10-Dec-08  
H11B1, H11B2, H11B3  
Optocoupler, Photodarlington  
Vishay Semiconductors  
Output, High Gain,  
with Base Connection  
SWITCHING CHARACTERISTICS  
PARAMETER  
TEST CONDITION  
SYMBOL  
MIN.  
TYP.  
5
MAX.  
UNIT  
µs  
ton  
toff  
Switching times  
IF = 5 mA, VCE = 10 V, RL = 100 Ω  
30  
µs  
TYPICAL CHARACTERISTICS  
Tamb = 25 °C, unless otherwise specified  
1.4  
100  
10  
Normalized to:  
CE = 5 V  
IF = 2 mA  
VCE = 5 V  
VCE = 1 V  
1.3  
V
Ta = - 55 °C  
1.2  
Ta = 25 °C  
1.1  
1
1.0  
0.9  
0.1  
Ta = 100 °C  
0.8  
0.01  
0.7  
10  
100  
0.1  
1
0.1  
1
10  
100  
ih11b1_03  
IF - LED Current (mA)  
IF - Forward Current (mA)  
ih11b1_01  
Fig. 1 - Forward Voltage vs. Forward Current  
Fig. 3 - Normalized Non-Saturated and Saturated ICE vs.  
LED Current  
10  
4.0  
Normalized to:  
IF = 10 mA  
VCE = 5 V  
Normalized to:  
3.5  
V
CE = 5 V  
V
CE = 5 V  
1
3.0  
IF = 1 mA  
2.5  
2.0  
VCE = 1 V  
0.1  
0.01  
VCE = 5 V  
VCE = 1 V  
1.5  
1.0  
0.5  
0.0  
0.001  
100  
0.1  
1
10  
0.1  
1
10  
100  
ih11b1_04  
IF - LED Current (mA)  
ih11b1_02  
IF - LED Current (mA)  
Fig. 2 - Normalized Non-Saturated and Saturated CTRCE vs.  
LED Current  
Fig. 4 - Normalized Non-Saturated and Saturated Collector Emitter  
Current vs. LED Current  
Document Number: 83609  
Rev. 1.6, 10-Dec-08  
For technical questions, contact: optocoupler.answers@vishay.com  
www.vishay.com  
285  
H11B1, H11B2, H11B3  
Optocoupler, Photodarlington  
Vishay Semiconductors  
Output, High Gain,  
with Base Connection  
10 000  
IF  
VCE = 5 V  
8000  
6000  
4000  
tD  
tR  
VO  
tPLH  
VCE = 1 V  
VTH = 1.5 V  
tF  
2000  
0
tPHL  
tS  
0.01  
0.1  
1
10  
100  
ih11b1_08  
ih11b1_05  
Ib - Base Current (µA)  
Fig. 5 - Non-Saturated and Saturated hFE vs. Base Current  
Fig. 8 - Switching Waveform  
V
= 10 V  
80  
CC  
R
VCC = 5 V  
1.0 kΩ  
Vth = 1.5 V  
f = 10 kHz,  
60  
40  
DF = 50 %  
L
V
O
220 Ω  
470 Ω  
I
= 5 mA  
20  
0
F
100 Ω  
ih11b1_09  
0
5
10  
15  
20  
IF - LED Current (mA)  
ih11b1_06  
Fig. 9 - Switching Schematic  
Fig. 6 - Low to High Propagation Delay vs.  
Collector Load Resistance and LED Current  
20  
1 kΩ  
VCC = 5 V  
15  
Vth = 1.5 V  
10  
5
100 Ω  
0
0
5
10  
15  
20  
ih11b1_07  
IF - LED Current (mA)  
Fig. 7 - High to Low Propagation Delay vs.  
Collector Load Resistance and LED Current  
www.vishay.com  
286  
For technical questions, contact: optocoupler.answers@vishay.com  
Document Number: 83609  
Rev. 1.6, 10-Dec-08  
H11B1, H11B2, H11B3  
Optocoupler, Photodarlington  
Vishay Semiconductors  
Output, High Gain,  
with Base Connection  
PACKAGE DIMENSIONS in inches (millimeters)  
Pin one ID  
2
1
3
0.248 (6.30)  
0.256 (6.50)  
ISO method A  
4
5
6
0.335 (8.50)  
0.343 (8.70)  
0.300 (7.62)  
typ.  
(0.45)  
0.048  
0.039  
(1.00)  
min.  
0.022 (0.55)  
0.130 (3.30)  
0.150 (3.81)  
18°  
4°  
typ.  
0.114 (2.90)  
0.031 (0.80) min.  
0.130 (3.0)  
0.010 (0.25)  
0.031 (0.80)  
typ.  
3° to 9°  
0.018 (0.45)  
0.035 (0.90)  
0.300 to 0.347  
0.022 (0.55)  
i178004  
0.100 (2.54) typ.  
(7.62 to 8.81)  
Option 7  
Option 9  
0.375 (9.53)  
0.395 (10.03)  
0.300 (7.62)  
typ.  
0.300 (7.62)  
ref.  
0.028 (0.7)  
0.180 (4.6)  
0.160 (4.1)  
0.0040 (0.102)  
0.0098 (0.249)  
0.012 (0.30) typ.  
0.315 (8.0)  
min.  
0.020 (0.51)  
0.040 (1.02)  
0.331 (8.4)  
15° max.  
min.  
0.315 (8.00)  
min.  
0.406 (10.3)  
max.  
18494  
Document Number: 83609  
Rev. 1.6, 10-Dec-08  
For technical questions, contact: optocoupler.answers@vishay.com  
www.vishay.com  
287  
H11B1, H11B2, H11B3  
Optocoupler, Photodarlington  
Vishay Semiconductors  
Output, High Gain,  
with Base Connection  
OZONE DEPLETING SUBSTANCES POLICY STATEMENT  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with  
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone  
depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use  
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in  
the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency  
(EPA) in the USA.  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do  
not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the  
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall  
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any  
claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
288  
For technical questions, contact: optocoupler.answers@vishay.com  
Document Number: 83609  
Rev. 1.6, 10-Dec-08  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Revision: 12-Mar-12  
Document Number: 91000  
1

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