H11C4 [VISHAY]
Optocoupler, PhotoSCR Output, 400 V VRM, 5 A surge current; 光电耦合器， PhotoSCR输出， 400 V VRM ， 5 A浪涌电流
| 型号： | H11C4 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, PhotoSCR Output, 400 V VRM, 5 A surge current |
| 文件： | 总5页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
H11C4/ H11C5/ H11C6
Vishay Semiconductors
Optocoupler, PhotoSCR Output, 400 V V , 5 A surge current
RM
Features
• Turn on current (I ), 5.0 mA typical
FT
• Gate trigger current (I ), 20 mA typical
GT
A
C
1
2
3
6
5
4
G
A
C
• Surge anode current, 5.0 A
• Blocking voltage, 400 V gate trigger voltage (V ),
GT
0.6 V typical
NC
• Isolation test voltage 5300 V
• Solid State reliability
RMS
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Pb
e3
i179006
Pb-free
Agency Approvals
Order Information
• UL1577, File No. E52744 System Code H or J,
Double Protection
Part
Remarks
H11C4
IFT ≤ 11 mA, DIP-6
IFT ≤ 11 mA, DIP-6
IFT ≤ 14 mA, DIP-6
H11C5
Description
H11C6
The H11C4/ H11C5/ H11C6 are optically coupled
SCRs with a gallium arsenide infrared emitter and a
silicon photo SCR sensor. Switching can be achieved
while maintaining a high degree of isolation between
triggering and load circuits. These optocouplers can
be used in SCR triac and solid state relay applications
where high blocking voltages and low input current
sensitivity are required.
H11C4-X006
H11C6-X009
IFT ≤ 11 mA, DIP-6 400 mil (option 6)
IFT ≤ 14 mA, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
The H11C4 and H11C5 are identical and have a max-
imum turn-on-current of 11 mA. The H11C6 has a
maximum of 14 mA.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VRM
Value
6.0
Unit
V
Peak reverse voltage
Forward continuous current
Peak forward current
IF
60
3.0
mA
A
1.0 ms, 1 % Duty Cycle
IFM
Power dissipation
Pdiss
100
1.33
mW
Derate linearly from 25 °C
mW/°C
Document Number 83610
Rev. 1.6, 26-Oct-04
www.vishay.com
1
H11C4/ H11C5/ H11C6
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
VRG
Value
6.0
Unit
V
Reverse gate voltage
Anode voltage
DC or AC peak
VA
IFRMS
IAS
400
300
5.0
V
mA
A
RMS forward current
Surge anode current
Peak forward current
Surge gate current
Power dissipation
10 ms duration
100 µs, 1% Duty Cycle
5.0 ms duration
IFM
10
A
IGS
200
1000
13.3
mA
mW
mW/°C
Pdiss
Derate linearly from 25°C
Coupler
Parameter
Test condition
Symbol
VISO
Value
5300
Unit
Isolation test voltage (between
emitter and detector referred to
standard climate 23 °C/ 50 %
RH, DIN 50014)
VRMS
Creepage
Clearance
≥ 7.0
≥ 7.0
175
mm
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
≥ 1012
≥ 1011
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
RIO
Ptot
Ω
Ω
V
IO = 500 V, Tamb = 100 °C
Total package dissipation
400
mW
Derate linearly from 25 °C
5.5
mW/°C
°C
Operating temperature range
Tamb
Tstg
- 55 to + 100
Storage temperature range
- 55 to + 150
10
°C
Lead soldering time at 260 °C
sec.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 10 mA
Symbol
VF
Min
Typ.
1.2
Max
1.5
Unit
V
Forward voltage
Reverse current
Capacitance
V
V
R = 3.0 V
R = 0, f = 1.0 MHz
IR
10
µA
CO
50
pF
Output
Parameter
Test condition
Symbol
VDM
Min
400
Typ.
Max
Unit
V
Forward blocking voltage
RGK = 10 KΩ, TA = 100 °C,
Id = 150 µA
Reverse blocking voltage
RGK = 10 KΩ, TA = 100 °C,
Id = 150 µA
VDM
400
V
On-state voltage
Holding current
IT = 300 mA
Vt
IH
1.1
1.3
V
R
GK = 27 KΩ, VFX = 50 V
500
µA
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2
Document Number 83610
Rev. 1.6, 26-Oct-04
H11C4/ H11C5/ H11C6
Vishay Semiconductors
Parameter
Test condition
VFX = 100 V, RGK = 27 kΩ,
RL=10 KΩ
Symbol
VGT
Min
Typ.
0.6
Max
1.0
Unit
V
Gate trigger voltage
Forward leakage current
Reverse leakage current
Gate trigger current
R
GK = 10 KΩ, VRX = 400 V,
IR
IR
150
150
20
µA
µA
µA
IF = 0, TA = 100 °C
RGK = 10 KΩ, VRX = 400 V,
IF = 0, TA=100 °C
V
FX = 100 V, RRG = 27 KΩ,
IGT
50
RL = 10 KΩ
Capacitance, Anode to gate
Capacitance, Gate to cathode
V = 0, f = 1.0 MHz
V = 0, f = 1.0 MHz
20
pF
pF
350
Coupler
Parameter
Test condition
VDM = 50 V, RGK = 10 KΩ
Part
Symbol
Min
Typ.
Max
Unit
mA
Turn-on current
H11C4
IFT
IFT
IFT
IFT
IFT
IFT
20
20
30
11
11
14
H11C5
H11C6
H11C4
H11C5
H11C6
mA
mA
mA
mA
mA
V
DM = 100 V, RGK = 27 KΩ
5.0
5.0
7.0
Package Dimensions in Inches (mm)
pin one ID
2
1
3
.248 (6.30)
.256 (6.50)
ISO Method A
4
5
6
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300–.347
(7.62–8.81)
.100 (2.54) typ.
i178004
Document Number 83610
Rev. 1.6, 26-Oct-04
www.vishay.com
3
H11C4/ H11C5/ H11C6
Vishay Semiconductors
Option 6
Option 9
.375 (9.53)
.395 (10.03)
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
15° max.
.020 (.51)
.040 (1.02)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.315 (8.00)
min.
.430 (10.92)
18493
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4
Document Number 83610
Rev. 1.6, 26-Oct-04
H11C4/ H11C5/ H11C6
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83610
Rev. 1.6, 26-Oct-04
www.vishay.com
5
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