HF15D060ACE [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, 125 MM, WAFER;
| 型号： | HF15D060ACE |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, 125 MM, WAFER 功效 二极管 |
| 文件： | 总3页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94413
HF15D060ACE
Hexfred Die in Wafer Form
600V
Features
• GEN3 Hexfred Technology
I
F(nom)=15A
• Low VF
• Low IRR
• Low tRR
V
F(typ)= 1.2V @ IF(nom) @ 25°C
• Soft Reverse Recovery
Motor Control Antiparallel Diode
125mm Wafer
Benefits
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
• Low EMI
Reference Standard IR Package Part: IRGS15B60KD
• Excellent Current Sharing in Parallel Operation
• Qualified for Industrial Market
Electrical Characteristics (Wafer Form)
Parameter
Description
Guaranteed (min, max)
Test Conditions
VF
Forward Voltage Drop
0.8V min, 1.1V max
600V min
IC = 3A, TJ = 25°C
BVR
IRM
Reverse Breakdown Voltage
Reverse Leakage Current
TJ = 25°C, IR = 1mA
TJ = 25°C, VR = 600V
15µA max
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Cr- Ni - Ag, (1kA - 4kA - 6kA)
99% Al/1% Si, (3µm)
0.085'' x 0.130"
Wafer Diameter
125mm, with std. < 100 > flat
381µm, +/-15µm
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
01-5509
100µm
Reject Ink Dot Size
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Die Outline
04/19/02
Document Number: 93791
www.vishay.com
1
HF15D060ACE
Hexfred Die in Wafer Form
Fig. 1 - Typical Diode Recovery Waveform
VCC = 400V; Rg = 22 ; Tj = 150°C
L = 200µH; Driver = IRGS15B60K
100
0
20
Voltage
10
-100
-200
-300
-400
-500
0
)
V
(
)
A
(
I
-10
-20
-30
-40
F
F
V
Current
-0.30
0.00
0.30
0.60
time (µS)
Fig. 2 - Typical Diode Forward
Characteristics
Fig. 3 - Diode Recovery Circuit
60
50
40
30
20
10
0
DUT
- 40°C
25°C
150°C
)
A
(
I
L
F
150°C
DRIVER
VCC
Rg
25°C
- 40°C
0
1
2
3
VF (V)
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2
Document Number: 93791
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
www.vishay.com
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