HFA08TB60STRLPBF
更新时间：2024-09-18 18:14:50
品牌：VISHAY
描述：Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, LEAD FREE, D2PAK-3
概述
规格参数
数据手册HFA08TB60STRLPBF 概述
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, LEAD FREE, D2PAK-3 整流二极管
HFA08TB60STRLPBF 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Obsolete | 零件包装代码： | TO-263 |
| 包装说明： | R-PSSO-G2 | 针数： | 3 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.80 | 风险等级： | 5.67 |
| 其他特性： | LOW NOISE | 应用： | EFFICIENCY |
| 外壳连接： | CATHODE | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| 最大正向电压 (VF)： | 1.7 V | JESD-30 代码： | R-PSSO-G2 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 最大非重复峰值正向电流： | 60 A | 元件数量： | 1 |
| 相数： | 1 | 端子数量： | 2 |
| 最高工作温度： | 150 °C | 最低工作温度： | -55 °C |
| 最大输出电流： | 8 A | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 认证状态： | Not Qualified |
| 最大重复峰值反向电压： | 600 V | 最大反向恢复时间： | 0.055 µs |
| 子类别： | Rectifier Diodes | 表面贴装： | YES |
| 端子面层： | Matte Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | 30 |
| Base Number Matches： | 1 |
HFA08TB60STRLPBF 数据手册
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HFA08TB60SPbF
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Specified at Operating Conditions
Lead-Free
VR = 600V
(K)
BASE
+
2
VF(typ.)* = 1.4V
IF(AV) = 8.0A
Qrr (typ.)= 65nC
IRRM = 5.0A
Benefits
trr(typ.) = 18ns
3
_
1
(N/C)
(A)
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
di(rec)M/dt (typ.) = 240A/µs
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA08TB60S is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques
it features a superb combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available. With basic ratings of 600
volts and 8 amps continuous current, the HFA08TB60S is especially well suited for
use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast
recovery time, the HEXFRED product line features extremely low values of peak
recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the
D2 Pak
tb portion of recovery. The HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is
ideally suited for applications in power supplies (PFC Boost diode) and power
conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
Max.
Units
VR
Cathode-to-AnodeVoltage
600
8.0
60
V
IF @ TC = 100°C
IFSM
ContinuousForwardCurrent
Single Pulse Forward Current
MaximumRepetitiveForwardCurrent
MaximumPowerDissipation
A
IFRM
24
PD @ TC = 25°C
36
W
°C
PD @ TC = 100°C MaximumPowerDissipation
14
TJ
OperatingJunctionand
-55 to +150
TSTG
StorageTemperatureRange
* 125°C
10/07/05
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1
Document Number: 94048
HFA08TB60SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
600
1.4 1.7
1.7 2.1
1.4 1.7
0.3 5.0
100 500
V
IR = 100µA
IF = 8.0A
See Fig. 1
See Fig. 2
Max Forward Voltage
V
IF = 16A
IF = 8.0A, TJ = 125°C
VR = VR Rated
IRM
Max Reverse Leakage Current
µA
TJ = 125°C, VR = 0.8 x VR RatedD Rated
See Fig. 3
VR = 200V
CT
LS
Junction Capacitance
Series Inductance
10
25
pF
nH
Measured lead to lead 5mm from
package body
8.0
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
trr
Reverse Recovery Time
18
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1
37
55
55
90
ns TJ = 25°C
TJ = 125°C
See Fig. 5, 6
trr2
IF = 8.0A
VR = 200V
IRRM1
IRRM2
Qrr1
Peak Recovery Current
3.5 5.0
4.5 8.0
65 138
124 360
240
210
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
A
Reverse Recovery Charge
See Fig. 7
nC
Qrr2
dif/dt = 200A/µs
di(rec)M/dt1
di(rec)M/dt2
Peak Rate of Fall of Recovery Current
A/µs
See Fig. 8
During tb
Thermal - Mechanical Characteristics
Parameter
LeadTemperature
Min.
Typ.
2.0
Max.
300
Units
°C
Tlead
RthJC
RthJA
Wt
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Weight
3.5
K/W
80
g
0.07
(oz)
0.063 in. from Case (1.6mm) for 10 sec
TypicalSocketMount
Document Number: 94048
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2
HFA08TB60SPbF
1000
100
10
100
10
1
T = 150°C
J
T = 125°C
J
1
0.1
T = 25°C
J
0.01
0.001
T = 150°C
J
T = 125°C
J
0
100
200
300
400
500
600
T = 25°C
J
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
100
T = 25°C
J
10
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V
(V)
FM
1
Fig. 1 - Maximum Forward Voltage Drop
1
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
0.01
0.1
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94048
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3
HFA08TB60SPbF
20
15
10
5
80
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 16A
F
F
F
I
I
= 8.0A
= 4.0A
60
40
20
0
I
= 16A
= 8.0A
= 4.0A
F
I
I
F
F
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery vs. dif/dt
10000
500
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
I
I
I
= 16A
= 8.0A
= 4.0A
F
F
I
I
I
= 16A
= 8.0A
= 4.0A
F
F
F
300
200
100
0
F
1000
100
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
Document Number: 94048
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4
HFA08TB60SPbF
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
RRM
I
RRM
5
di(rec)M/dt
Ω
0.01
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
Document Number: 94048
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5
HFA08TB60SPbF
D2PAK Package Outline
Dimensions are shown in millimeters (inches)
D2PAK Part Marking Information
THIS IS A HFA08TB60S
(K)
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YY = YEAR
AS S E MB L Y
LOT CODE
WW = WE E K
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
(N/C)
(A)
Document Number: 94048
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6
HFA08TB60SPbF
D2PAK Tape & Reel Information
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
10/05
Document Number: 94048
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Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
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