HFAA04SD60STRPBF [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DPAK-3;
HFAA04SD60STRPBF
型号: HFAA04SD60STRPBF
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DPAK-3

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HFA04SD60SPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 4 A  
FEATURES  
• Ultrafast recovery time  
• Ultrasoft recovery  
• Very low IRRM  
2
• Very low Qrr  
• Guaranteed avalanche  
• Specified at operating temperature  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
1
N/C  
3
D-PAK  
Anode  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
PRODUCT SUMMARY  
• Reduced parts count  
VR  
VF at 4 A at 25 °C  
IF(AV)  
600 V  
1.8 V  
4 A  
DESCRIPTION/APPLICATIONS  
These diodes are optimized to reduce losses and EMI/RFI  
in high frequency power conditioning systems. The softness  
of the recovery eliminates the need for a snubber in  
most applications. These devices are ideally suited for  
freewheeling, flyback, power converters, motor drives, and  
other applications where high speed and reduced switching  
losses are design requirements.  
t
rr (typical)  
17 ns  
150 °C  
TJ (maximum)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
IFSM  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
TC = 100 °C  
4
25  
16  
A
Repetitive peak forward current  
Maximum power dissipation  
IFRM  
TC = 116 °C  
TC = 100 °C  
PD  
10  
W
Operating junction and storage temperatures  
TJ, TStg  
- 55 to 150  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
600  
-
-
IF = 4 A  
IF = 8 A  
-
-
-
-
-
-
-
1.5  
1.8  
1.4  
0.17  
44  
1.8  
2.2  
1.7  
3.0  
300  
8
V
Forward voltage  
See fig. 1  
VF  
IF = 4 A, TJ = 125 °C  
VR = VR rated  
Maximum reverse  
leakage current  
IR  
µA  
TJ = 125 °C, VR = 0.8 x VR rated  
VR = 200 V  
Junction capacitance  
Series inductance  
CT  
LS  
4
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Document Number: 94034  
Revision: 10-Sep-09  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1
HFA04SD60SPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 4 A  
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IF = 1.0 A, dIF/dt = 200 A/µA, VR = 30 V  
TJ = 25 °C  
MIN.  
TYP.  
MAX.  
-
UNITS  
-
-
-
-
-
-
-
-
-
17  
Reverse recovery time  
trr  
28  
42  
57  
5.2  
6.7  
60  
105  
-
ns  
TJ = 125 °C  
38  
TJ = 25 °C  
2.9  
3.7  
40  
Peak recovery current  
IRRM  
A
IF = 4 A  
TJ = 125 °C  
dIF/dt = 200 A/µs  
TJ = 25 °C  
V
R = 200 V  
Reverse recovery charge  
Qrr  
nC  
TJ = 125 °C  
TJ = 25 °C  
TJ = 125 °C  
70  
280  
235  
Rate of fall of recovery current dI(rec)M/dt  
A/µs  
-
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Maximum junction and  
storage temperature range  
TJ, TStg  
- 55  
-
150  
°C  
Thermal resistance,  
junction to case  
RthJC  
RthJA  
-
-
-
-
5.0  
80  
°C/W  
Thermal resistance,  
junction to ambient  
Typical socket mount  
-
-
2.0  
-
-
g
Weight  
0.07  
oz.  
6.0  
(5.0)  
12  
(10)  
kgf · cm  
(lbf in)  
Mounting torque  
Marking device  
-
Case style D-PAK  
HFA04SD60S  
www.vishay.com  
2
For technical questions, contact: diodestech@vishay.com  
Document Number: 94034  
Revision: 10-Sep-09  
HFA04SD60SPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 4 A  
100  
10  
1
1000  
100  
10  
TJ = 150 °C  
TJ = 125 °C  
1
TJ = 175 °C  
TJ = 125 °C  
TJ = 25 °C  
TJ = 25 °C  
0.1  
0.01  
0.1  
0.001  
0
100  
200  
300  
400  
500  
0
1
2
3
4
5
6
VR - Reverse Voltage (V)  
VF - Forward Voltage Drop (V)  
Fig. 1 - Typical Forward Voltage Drop Characteristics  
Fig. 2 - Typical Values of Reverse Current vs.  
Reverse Voltage  
100  
TJ = 25 °C  
10  
1
1
10  
100  
1000  
VR - Reverse Voltage (V)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage  
10  
1
PDM  
t1  
D = 0.50  
D = 0.20  
D = 0.10  
D = 0.05  
D = 0.02  
D = 0.01  
t2  
0.1  
Single pulse  
Notes:  
(thermal resistance)  
1. Duty factor D = t1/t2  
2. Peak TJ = PDM x ZthJC + TC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
t1 - Rectangular Pulse Duration (s)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics  
For technical questions, contact: diodestech@vishay.com  
Document Number: 94034  
Revision: 10-Sep-09  
www.vishay.com  
3
HFA04SD60SPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 4 A  
50  
200  
VR = 200 V  
180  
160  
140  
120  
100  
80  
TJ = 125 °C  
TJ = 25 °C  
IF = 8 A  
IF = 4 A  
IF = 8 A  
IF = 4 A  
40  
30  
20  
60  
VR = 200 V  
TJ = 125 °C  
TJ = 25 °C  
40  
20  
100  
100  
1000  
1000  
dIF/dt (A/µs)  
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt  
dIF/dt (A/µs)  
Fig. 7 - Typical Stored Charge vs. dIF/dt  
14  
1000  
IF = 8 A  
IF = 4 A  
12  
10  
8
IF = 8 A  
IF = 4 A  
6
4
VR = 200 V  
TJ = 125 °C  
TJ = 25 °C  
VR = 200 V  
TJ = 125 °C  
TJ = 25 °C  
2
100  
100  
0
100  
1000  
1000  
dIF/dt (A/µs)  
dIF/dt (A/µs)  
Fig. 6 - Typical Recovery Current vs. dIF/dt  
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt  
www.vishay.com  
4
For technical questions, contact: diodestech@vishay.com  
Document Number: 94034  
Revision: 10-Sep-09  
HFA04SD60SPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 4 A  
V
R = 200 V  
0.01 Ω  
L = 70 µH  
D.U.T.  
D
dIF/dt  
adjust  
IRFP250  
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit  
(3)  
trr  
IF  
ta  
tb  
0
(4)  
Qrr  
(2)  
IRRM  
0.5 IRRM  
(5)  
dI(rec)M/dt  
0.75 IRRM  
dIF/dt  
(1)  
(4) Qrr - area under curve defined by trr  
(1) dIF/dt - rate of change of current  
through zero crossing  
and IRRM  
trr x IRRM  
(2) IRRM - peak reverse recovery current  
Qrr  
=
2
(3) trr - reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current.  
(5) dI(rec)M/dt - peak rate of change of  
current during tb portion of trr  
Fig. 10 - Reverse Recovery Waveform and Definitions  
Document Number: 94034  
Revision: 10-Sep-09  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
5
HFA04SD60SPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 4 A  
ORDERING INFORMATION TABLE  
Device code  
HFA  
A
04  
SD  
60  
S
TR PbF  
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
-
-
-
-
-
-
HEXFRED® family  
Electron irradiated  
Current rating (04 = 4 A)  
D-PAK  
Voltage rating (60 = 600 V)  
S = D-PAK  
-
TR = Tape and reel  
TRR = Tape and reel (right oriented)  
TRL = Tape and reel (left oriented)  
PbF = Lead (Pb)-free  
-
8
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95016  
www.vishay.com/doc?95059  
www.vishay.com/doc?95033  
Part marking information  
Packaging information  
www.vishay.com  
6
For technical questions, contact: diodestech@vishay.com  
Document Number: 94034  
Revision: 10-Sep-09  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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