IL211A [VISHAY]
Transistor Output Optocoupler, 1-Element, 3000V Isolation, SOIC-8;型号: | IL211A |
厂家: | VISHAY |
描述: | Transistor Output Optocoupler, 1-Element, 3000V Isolation, SOIC-8 输出元件 光电 |
文件: | 总3页 (文件大小:377K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IL211AT/212AT/213AT
Phototransistor
Small Outline Surface Mount
Optocoupler
FEATURES
• High Current Transfer Ratio
IL211A, 20% Minimum
IL212A, 50% Minimum
IL213A, 100% Minimum
Dimensions in inches (mm)
.120 .005
(3.05 .13)
.240
Anode
.154 .005 Cathode
8
7
6
5
1
2
3
4
NC
Base
Collector
Emitter
• Isolation Voltage, 3000 V
C
RMS
L
(3.91 .13)
.016 (.41)
.015 .002
NC
NC
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8A Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available only on Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
(6.10)
Pin One ID
7°
.058 .005
(1.49 .13)
40°
.192 .005
(4.88 .13)
(.38 .05)
.004 (.10)
.008 (.20)
.125 .005
(3.18 .13)
.008 (.20)
5° max.
Lead
R.010
(.25) max.
.050 (1.27)
typ.
.021 (.53)
Coplanarity
.0015 (.04)
max.
.020 .004
(.51 .10)
2 plcs.
• Underwriters Lab File #E52744
(Code LetterY)
VE
D
•
VDE 0884 Available with Option 1
DESCRIPTION
The IL211AT/212AT/213AT are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including a
DC level, can be transmitted by the device while main-
taining a high degree of electrical isolation between
input and output. The IL211AT/212AT/213AT comes in
a standard SOIC-8 small outline package for surface
mounting which makes it ideally suited for high density
applications with limited space. In addition to eliminat-
ing through-holes requirements, this package con-
forms to standards for surface mounted devices.
Characteristics T =25°C
A
Parameter
Symbol Min. Typ. Max. Unit
Condition
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
—
—
—
1.3
0.1
13
1.5
100
—
V
IF=10 mA
VR=6.0 V
VR=0
µA
pF
C0
Breakdown Voltage
B
30
7.0
—
—
—
—
50
V
IC=10 µA
VCEO
B
—
V
I =10 µA
VECO
E
Dark Current,
Collector-Emitter
ICEOdark
5.0
nA
VCE=10 V
IF=0
A choice of 20, 50, and 100% minimum CTR at
I =10 mA makes these optocouplers suitable for
F
a variety of different applications.
Capacitance,
CCE
—
10
—
pF
VCE=0
Collector-Emitter
Maximum Ratings
Emitter
Package
DC
IL211AT CTR
20
50
—
—
—
%
IF=10 mA,
VCE=5.0 V
Peak Reverse Voltage .................................. 6.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25°C......................... 90 mW
Derate Linearly from 25°C................... 1.2mW/°C
Detector
Collector-Emitter Breakdown Voltage............ 30 V
Emitter-Collector Breakdown Voltage........... 7.0 V
Collector-Base Breakdown Voltage............... 70 V
DC
Current
Transfer
Ratio
IL212AT
IL213AT
50
80
100
130
Saturation Voltage,
Collector-Emitter
VCEsat
—
—
0.4
—
—
—
—
—
IF=10 mA,
IC=2.0 mA
Isolation Test
Voltage
V
3000
—
—
V
1 sec.
IO
RMS
Capacitance,
Input to Output
C
R
0.5
100
3.0
pF
GΩ
µs
—
I
I
..................................................... 50 mA
(t<1.0 ms)....................................... 100 mA
IO
CMAX DC
CMAX
Resistance,
Input to Output
—
—
Power Dissipation ................................... 150 mW
Derate Linearly from 25°C................... 2.0mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector).................................. 240 mW
Derate Linearly from 25°C................... 3.2mW/°C
Storage Temperature ................ –55°C to +150°C
Operating Temperature ............ –55°C to +100°C
Soldering Time at 260°C ...........................10 sec.
IO
Switching Time
t
, t
—
IC=2.0 mA,
R =100 Ω,
VLCC=10 V
on off
Document Number: 83615
Revision 17-August-01
www.vishay.com
2–111
Figure 1. Forward voltage versus forward current
Figure 5. Normalized collector-base photocurrent
versus LED current
1.4
10
1.3
Normalized to:
T
T
= -55°C
= 25°C
A
Vcb = 9.3 V
1.2
1.1
1.0
0.9
0.8
0.7
IF = 10 mA
Ta = 25 °C
1
A
.1
T
= 100°C
A
.01
.1
1
10
100
.1
1
10
100
I
- Forward Current - mA
IF - LED Current - mA
F
Figure 2. Normalized non-saturated and saturated
Figure 6. Collector-base photocurrent versus
LED current
CTR versus LED current
ce
1.5
1000
Normalized to:
Vce = 10 V
IF = 10 mA
Ta = 25°C
Vcb = 9.3 V
100
Vce = 5 V
1.0
0.5
0.0
Ta = 25°C
10
1
Vce = 0.4 V
.1
.1
1
10
100
.1
1
10
100
IF - LED Current - mA
IF - LED Current - mA
Figure 7. Collector-emitter leakage current
versus temperature
Figure 3. Collector-emitter current versus LED current
150
Ta = 25°C
5
10
4
10
Vce = 10 V
100
3
10
2
10
V
= 10 V
CE
1
10
10
10
10
50
Typical
0
Vce = 0.4 V
100
-1
0
-2
.1
1
10
-20
0
20
40
60
80 100
IF - LED Current - mA
T
- Ambient Temperature - °C
A
Figure 4. Normalized collector-base photocurrent
versus LED current
Figure 8. Normalized saturated HFE versus base
current and temperature
100
2.0
70°C
Normalized to:
Normalized to:
Vcb = 9.3 V
IF = 1 mA
Ta = 25 °C
50°C
Ib = 20µA
Vce = 10 V
Ta = 25 °C
1.5
1.0
0.5
0.0
25°C
10
1
Vce = 0.4 V
.1
.1
1
10
100
1
10
100
1000
IF - LED Current - mA
Ib - Base Current - µA
Document Number: 83615
Revision 17-August-01
www.vishay.com
2–112
Figure 9. Typical switching characteristics
Figure 11. Switching time test schematic and waveform
versus base resistance (saturated operation)
INPUT
0
VCC=5 V
RL
t
t
off
Input
on
100
Input:
F
VOUT
t
t
pdon
pdof
t
I =10mA
50
t
r
Pulse width=100 mS
Duty cycle=50%
t
r
t
d
OUTPUT
s
0
10%
50%
10%
50%
10
5
90%
90%
1.0
10K
50K 100K 500K 1M
Base-emitter resistance, R
BE
(Ω)
Figure 10.Typical switching times
versus load resistance
1000
Input:
F
500
I =10 mA
Pulse width=100 mS
Duty cycle=50%
100
50
10
5
1
0.1
0.5
1
5
10
50 100
Load resistance R (KΩ)
L
Document Number: 83615
Revision 17-August-01
www.vishay.com
2–113
相关型号:
IL211AT-1
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SOIC-8
VISHAY
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