IL66B-2X009 [VISHAY]
Optocoupler, Photodarlington Output, With Internal RBE; 光电耦合器，光电复合输出，带内部RBE
| 型号： | IL66B-2X009 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Photodarlington Output, With Internal RBE |
| 文件： | 总5页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IL66B
Vishay Semiconductors
VISHAY
Optocoupler, Photodarlington Output, With Internal R
BE
Features
• Internal RBE for high stability
• Isolation test voltage, 5300 V
• No base connection
• High isolation resistance
• Standard plastic DIP package
• Lead-free component
RMS
A
C
1
2
3
NC
6
5
4
C
E
NC
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Pb
e3
i179019
Pb-free
driving and load circuits. They can be used to replace
reed and mercury relays with advantages of long life,
high speed switching and elimination of magnetic
fields.
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• BSI IEC60950 IEC60065
• CSA 93751
Order Information
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Part
Remarks
IL66B-1
IL66B-2
CTR > 200 %, DIP-6
• FIMKO
CTR > 750 %, DIP-6
IL66B-1X006
IL66B-2X006
IL66B-2X009
CTR > 200 %, DIP-6 400 mil (option 6)
CTR > 750 %, DIP-6 400 mil (option 6)
CTR > 750 %, SMD-6 (option 9)
Description
The IL66B is an optically coupled isolator employing
a gallium arsenide infrared emitter and a silicon pho-
todarlington detector. Switching can be accomplished
while maintaining a high degree of isolation between
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
6.0
Unit
V
Peak reverse voltage
Forward continuous current
Power dissipation
IF
60
mA
mW
Pdiss
100
1.33
Derate linearly from 55 °C
mW/°C
Document Number 83639
Rev. 1.5, 26-Oct-04
www.vishay.com
1
IL66B
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
BVCEO
Value
60
Unit
V
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Power dissipation
BVECO
Pdiss
5.0
200
2.6
V
mW
Derate linearly from 25 °C
mW/°C
Coupler
Parameter
Test condition
t = 1.0 sec.
VIO = 500 V, Tamb = 25 °C
IO = 500 V, Tamb = 100 °C
Symbol
VISO
Value
5300
Unit
Isolation test voltage
Isolation resistance
VRMS
≥ 1012
≥ 1011
RIO
RIO
Ptot
Ω
Ω
V
Total dissipation
250
mW
Derate linearly
from 25 °C
3.3
mW/°C
min mm
min mm
°C
Creepage path
Clearance path
Storage temperature
7
7
Tstg
Tamb
Tsld
- 55 to + 150
Operating temperature
Lead soldering time
- 55 to + 100
10
°C
at 260 °C
sec.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 10 mA
Symbol
VF
Min
Typ.
1.25
Max
1.5
Unit
V
Forward voltage
Reverse current
Capacitance
V
V
R = 3.0 V
R = 0
IR
0.01
25
100
µA
CO
pF
Output
Parameter
Test condition
IC = 100 µA
Symbol
BVCEO
Min
60
Typ.
1.0
Max
100
Unit
V
Collector-emitter breakdown
voltage
Collector-emitter leakage
current
V
CE = 50 V, IF = 0
ICEO
nA
Coupler
Parameter
Test condition
IC = 10 mA
Symbol
VCEsat
Min
Typ.
Max
1.0
Unit
V
Saturation voltage
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
Min
200
Typ.
Max
Unit
%
Current Transfer Ratio
IF = 2.0 mA, VCE = 5.0 V
IL66B-1
CTR
CTR
IL66B-2
750
1000
%
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2
Document Number 83639
Rev. 1.5, 26-Oct-04
IL66B
Vishay Semiconductors
Switching Characteristics
Parameter
Test condition
Symbol
on, toff
Min
Typ.
Max
200
Unit
Turn-On, Turn-Off time
VCC = 10 V, IF = 2 mA,
t
µs
RL = 100 Ω
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.4
10000
Vce = 5 V
Vce = .4 V
1. 3
1000
100
10
Ta = –55°C
Ta = 25°C
1.2
1.1
1
1.0
0.9
.1
Ta = 85°C
.01
0.8
0.7
.001
.1
10
1
IF - LED Current - mA
100
.1
1
10
100
IF - Forward Current - mA
iil66b_01
iil66b_04
Figure 4. Non-Saturated and Saturated Collector Emitter Current
vs. LED Current
Figure 1. Forward Voltage vs. Forward Current
2.0
1.5
50
Normalized to:
Vce = 5 V
Vcc = 5 V
40
10 KıΩ
Vth = 1.5 V
Vce = 5 V
IF = 2 mA
30
20
1.0
0.5
0.0
220 Ω
ı
10
0
Vce = 1 V
100
.1
1
10
5
10
15
20
0
IF - LED Current - mA
IF - LED Current - mA
iil66b_02
iil66b_05
Figure 2. Normalized Non-saturated and Saturated CTRCE vs.
LED Current
Figure 5. High to low Propagation Delay vs. Collector Load
Resistance and LED Current
1.2
150
Normalized to:
Vce = 5 V
10 KΩ
1.0
0.8
125
Vce = 5 V
IF = 10 mA
100
0.6
2 KΩ
75
50
Vcc = 5 V
0.4
0.2
0.0
Vth = 1.5 V
25
0
220 KΩ
Vce = .4 V
.1
1
100
1000
10
IF - LED Current - mA
0
5
10
15
20
IF - LED Current - mA
iil66b_03
iil66b_06
Figure 3. Normalized Non-saturated and Saturated CTRCE vs.
LED Current
Figure 6. Low to High Propagation Delay vs. Collector Load
Resistance and LED Current
Document Number 83639
Rev. 1.5, 26-Oct-04
www.vishay.com
3
IL66B
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
2
1
3
.248 (6.30)
.256 (6.50)
ISO Method A
4
5
6
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300–.347
(7.62–8.81)
.100 (2.54) typ.
i178004
Option 6
Option 9
.375 (9.53)
.395 (10.03)
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
15° max.
.315 (8.00)
min.
18493
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4
Document Number 83639
Rev. 1.5, 26-Oct-04
IL66B
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83639
Rev. 1.5, 26-Oct-04
www.vishay.com
5
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