IL766-1X007 [VISHAY]

Optocoupler, Photodarlington Output, AC Input, Internal RBE; 光电耦合器,光电复合输出, AC输入,内部RBE
IL766-1X007
型号: IL766-1X007
厂家: VISHAY    VISHAY
描述:

Optocoupler, Photodarlington Output, AC Input, Internal RBE
光电耦合器,光电复合输出, AC输入,内部RBE

光电
文件: 总8页 (文件大小:362K)
中文:  中文翻译
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IL766/ ILD766  
Vishay Semiconductors  
VISHAY  
Optocoupler, Photodarlington Output, AC Input, Internal R  
BE  
A/C  
1
2
3
6
5
4
B
C
E
Features  
• Internal R for Better Stability  
C/A  
NC  
BE  
• BV  
> 60 V  
CEO  
• AC or Polarity Insensitive Inputs  
• Built-In Reverse Polarity Input Protection  
• Industry Standard DIP Package  
• Lead-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
8
1
E
A/C  
C/A  
2
3
4
7
6
5
C
C
E
A/C  
C/A  
i179039  
Pb  
e3  
Pb-free  
The IL766 is single channel optocouplers. The  
ILD766 has two isolated channels in a single DIP  
package.  
Agency Approvals  
• UL1577, File No. E52744 System Code H or J,  
Double Protection  
• CSA 93751  
Order Information  
• BSI IEC60950 IEC60065  
Part  
Remarks  
Applications  
ILD766-1  
CTR > 500 @ IF = 2.0 mA, DIP-8  
Designed for applications requiring detection or mon-  
itoring of AC signals.  
ILD766-2  
IL766-1  
CTR > 500 @ IF = 1.0 mA, DIP-8  
CTR > 500 @ IF = 2.0 mA, DIP-6  
CTR > 500 @ IF = 1.0 mA, DIP-6  
CTR > 500 @ IF = 2.0 mA, SMD-6 (option 7)  
IL766-2  
Description  
IL766-1X007  
The IL766/ ILD766 are bidirectional input optically  
coupled isolators. They consist of two Gallium Ars-  
enide infrared emitting diodes coupled to a silicon  
NPN photodarlington per channel.  
For additional information on the available options refer to  
Option Information.  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is  
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute  
Maximum Rating for extended periods of the time can adversely affect reliability.  
Input  
Each Channel  
Parameter  
Test condition  
Symbol  
IF  
Value  
60  
Unit  
mA  
Forward continuous current  
Power dissipation, single channel  
Power dissipation, dual channel  
Pdiss  
Pdiss  
200  
90  
mW  
mW  
Derate linearly from 25 °C, single channel  
Derate linearly from 25 °C, dual channel  
2.6  
1.2  
mW/°C  
mW/°C  
Document Number 83643  
Rev. 1.4, 26-Oct-04  
www.vishay.com  
1
IL766/ ILD766  
Vishay Semiconductors  
VISHAY  
Output  
Each Channel  
Parameter  
Test condition  
Symbol  
BVCEO  
Value  
60  
Unit  
V
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Power dissipation  
BVCBO  
Pdiss  
70  
V
100  
1.33  
mW  
Derate linearly from 25 °C  
mW/°C  
Coupler  
Parameter  
Test condition  
t = 1.0 sec.  
Tamb = 25 °C  
amb = 100 °C  
Symbol  
VISO  
Value  
5300  
Unit  
Isolation test voltage  
VRMS  
1012  
1011  
Isolation resistance  
RIO  
RIO  
Ptot  
T
Total power dissipation (LED plus detector),  
single channel  
250  
mW  
Total power dissipation (LED plus detector),  
dual channel  
Ptot  
400  
mW  
Derate linearly from 25 °C, single channel  
Derate linearly from 25 °C, dual channel  
Creepage  
3.3  
5.3  
mW/°C  
mW/°C  
mm  
7.0  
7.0  
175  
Clearance  
mm  
Comparative tracking index per DIN IEC  
112/VDE0303, part 1  
Storage temperature  
Tstg  
Tamb  
Tsld  
- 55 to + 150  
- 55 to +100  
10  
°C  
°C  
Operating temperature  
Lead soldering time at 260 °C  
sec.  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering  
evaluation. Typical values are for information only and are not part of the testing requirements.  
Input  
Parameter  
Test condition  
IF = 10 mA  
Symbol  
VF  
Min  
Typ.  
1.2  
Max  
1.5  
Unit  
V
Forward voltage  
Output  
Parameter  
Test condition  
IC = 1.0 mA  
Symbol  
BVCEO  
Min  
60  
Typ.  
75  
Max  
100  
Unit  
V
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Collector-emitter leakage current  
I
C = 10 µA  
BVCBO  
ICEO  
60  
90  
10  
V
VCE = 10 V  
nA  
Coupler  
Parameter  
Test condition  
Symbol  
VCEsat  
Min  
Typ.  
Max  
1.0  
Unit  
V
Saturation voltage, collector-emitter  
IF = 10 mA,  
C = 10 mA  
I
www.vishay.com  
2
Document Number 83643  
Rev. 1.4, 26-Oct-04  
IL766/ ILD766  
Vishay Semiconductors  
VISHAY  
Current Transfer Ratio  
Parameter  
Test condition  
Symbol  
CTRDC  
Min  
500  
Typ.  
Max  
Unit  
%
DC Current Transfer Ratio  
VCE = 5.0 V, IF = 2.0 mA,  
Switching Characteristics  
Parameter  
Test condition  
Symbol  
tr, tf  
Min  
Typ.  
100  
Max  
Unit  
Rise time, fall time  
VCC = 10 V, IF = 2.0 mA, RL = 100 Ω  
µs  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
200  
60  
180  
160  
140  
40  
20  
0
120  
100  
80  
60  
40  
-20  
-40  
20  
0
-60  
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
Collector Voltage (V)  
-2.0  
-1.0  
0
1.0  
2.0  
V
iil766_01  
CE  
Input Voltage - V (V)  
iil766_03  
F
Figure 1. Input Characteristics  
Figure 3. Transistor Output Current vs. Voltage  
4
3
100  
10  
90  
80  
70  
10  
2
10  
60  
50  
40  
30  
20  
10  
1
10  
0
1
0
25  
50  
75  
100  
125  
0
10 20 30 40 50 60 70 80 90 100  
Collector Voltage (V)  
i
l
iil766_02  
Temperature (°C)  
iil766_04  
Figure 2. Transistor Current vs. Voltage  
Figure 4. ICEO at VCE = 10 V vs. Temperature  
Document Number 83643  
Rev. 1.4, 26-Oct-04  
www.vishay.com  
3
IL766/ ILD766  
Vishay Semiconductors  
VISHAY  
600  
500  
400  
300  
200  
100  
10  
Normalized @  
R
= 10k  
L
I
= 10 mA  
= 25°C  
F
T
A
V
V
= 5 V  
CE  
CE  
1
.1  
R
= 1k  
= 1 V  
L
0
.01  
1
10  
.1  
1
10  
100  
I
- LED Current - mA  
F
iil766_08  
iil766_09  
iil766_10  
iil766_05  
I
- LED Current - mA  
F
Figure 5. Normalized CTR vs. Forward Current  
Figure 8. tfall vs. Forward Current  
20  
10  
0
30  
R
= 1k  
L
R = 1k  
L
20  
10  
.0  
R
= 10k  
L
R
= 10k  
L
10  
1
1
10  
iil766_06  
I
- LED Current - mA  
F
I
- LED Current - mA  
F
Figure 6. tr vs. Forward Current  
Figure 9. ton vs. Forward Current  
700  
600  
500  
400  
300  
200  
100  
R
R
= 10k  
L
L
I
F
V
=10 V  
CC  
F=10 KHz,  
DF=50%  
R
L
V
t
R
D
O
t
V
O
t
PLH  
= 1k  
I
=2 mA  
F
V
TH  
=1.5 V  
t
F
t
t
S
PHL  
0
1
10  
iil766_07  
I
- LED Current - mA  
F
Figure 7. Saturated Switching Characteristics Measurements-  
Schematic and Waveform  
Figure 10. toff vs. Forward Current  
www.vishay.com  
4
Document Number 83643  
Rev. 1.4, 26-Oct-04  
IL766/ ILD766  
Vishay Semiconductors  
VISHAY  
30  
20  
10  
0
400  
300  
R
= 1k  
L
R
= 10k  
L
L
200  
100  
R
= 10k  
L
R
= 1k  
0
1
10  
1
10  
I
- LED Current - mA  
F
iil766_11  
iil766_12  
I
- LED Current - mA  
F
Figure 11. tphl vs. Forward Current  
Figure 12. tplh vs. Forward Current  
Package Dimensions in Inches (mm)  
pin one ID  
2
1
3
.248 (6.30)  
.256 (6.50)  
ISO Method A  
4
5
6
.335 (8.50)  
.343 (8.70)  
.300 (7.62)  
typ.  
.048 (0.45)  
.022 (0.55)  
.039  
(1.00)  
Min.  
.130 (3.30)  
.150 (3.81)  
18°  
4°  
.114 (2.90)  
.130 (3.0)  
typ.  
.031 (0.80) min.  
3°–9°  
.010 (.25)  
typ.  
.031 (0.80)  
.035 (0.90)  
.018 (0.45)  
.022 (0.55)  
.300–.347  
(7.62–8.81)  
.100 (2.54) typ.  
i178004  
Document Number 83643  
Rev. 1.4, 26-Oct-04  
www.vishay.com  
5
IL766/ ILD766  
Vishay Semiconductors  
VISHAY  
Package Dimensions in Inches (mm)  
pin one ID  
4
5
3
6
1
8
2
7
.255 (6.48)  
.268 (6.81)  
ISO Method A  
.379 (9.63)  
.390 (9.91)  
.030 (0.76)  
.045 (1.14)  
.300 (7.62)  
.031 (0.79)  
typ.  
4° typ.  
.130 (3.30)  
.150 (3.81)  
.230(5.84)  
.250(6.35)  
.050 (1.27)  
10°  
.110 (2.79)  
.130 (3.30)  
.020 (.51 )  
.035 (.89 )  
3°–9°  
.008 (.20)  
.012 (.30)  
.018 (.46)  
.022 (.56)  
.100 (2.54) typ.  
i178006  
Option 7  
.300 (7.62)  
TYP.  
.255 (6.5)  
.248 (6.3)  
.028 (0.7)  
MIN.  
.180 (4.6)  
.160 (4.1)  
.315 (8.0)  
MIN.  
.331 (8.4)  
MIN.  
.406 (10.3)  
MAX.  
18447  
www.vishay.com  
6
Document Number 83643  
Rev. 1.4, 26-Oct-04  
IL766/ ILD766  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 83643  
Rev. 1.4, 26-Oct-04  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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