ILD2-X007 [VISHAY]
Optocoupler, Phototransistor Output (Dual, Quad Channel); 光电耦合器，光电晶体管输出（双通道，四通道）
| 型号： | ILD2-X007 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output (Dual, Quad Channel) |
| 文件： | 总9页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Dual Channel
Features
1
2
3
4
8
7
6
5
A
C
C
A
E
C
C
E
• Current Transfer Ratio at IF = 10 mA
• Isolation Test Voltage, 5300 VRMS
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
Quad Channel
• CSA 93751
1
16
15
14
13
12
11
10
9
A
E
C
C
E
E
C
• BSI IEC60950 IEC60065
2
3
4
5
6
7
8
C
C
A
A
C
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• FIMKO
C
E
C
A
Description
The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are optically coupled iso-
lated pairs employing GaAs infrared LEDs and silicon
NPN phototransistor. Signal information, including a
DC level, can be transmitted by the drive while main-
taining a high degree of electrical isolation between
input and output. The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are espe-
i179012
Pb
e3
Pb-free
cially designed for driving medium-speed logic and
can be used to eliminate troublesome ground loop
and noise problems. Also these couplers can be used
to replace relays and transformers in many digital
interface applications such as CTR modulation.
The ILD1/ 2/ 5 has two isolated channels in a single
DIP package and the ILQ1/ 2/ 5 has four isolated
channels per package.
Order Information
Part
Remarks
ILD1
CTR > 20 %, DIP-8
CTR > 20 %, DIP-16
CTR > 100 %, DIP-8
CTR > 100 %, DIP-16
CTR > 50 %, DIP-8
CTR > 50 %, DIP-16
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1-X007
ILD1-X009
ILD2-X006
ILD2-X007
ILD2-X009
ILD5-X009
ILQ1-X009
ILQ2-X009
CTR > 20 %, SMD-8 (option 7)
CTR > 20 %, SMD-8 (option 9)
CTR > 100 %, DIP-8 400 mil (option 6)
CTR > 100 %, SMD-8 (option 7)
CTR > 100 %, SMD-8 (option 9)
CTR > 50 %, SMD-8 (option 9)
CTR > 20 %, SMD-16 (option 9)
CTR > 100 %, SMD-16 (option 9)
For additional information on the available options refer to
Option Information.
Document Number 83646
Rev. 1.4, 05-Nov-04
www.vishay.com
1
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
6.0
Unit
V
Reverse voltage
V
R
Forward current
I
60
2.5
100
1.3
mA
A
F
Surge current
I
FSM
Power dissipation
Derate linearly from 25 °C
P
mW
diss
mW/°C
Output
Parameter
Test condition
Part
Symbol
Value
50
Unit
V
Collector-emitter reverse voltage
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
V
V
V
V
V
V
CER
CER
CER
CER
CER
CER
50
70
V
V
70
V
70
V
70
V
Collector current
I
I
50
mA
mA
mW
mW/°C
C
t < 1.0 ms
400
200
2.6
C
Power dissipation
P
diss
Derate linearly from 25 °C
Coupler
Parameter
Test condition
Symbol
Value
5300
Unit
Isolation test voltage (between
emitter and detector referred to
standard climate 25 °C/ 50 %
RH, DIN 50014)
V
V
RMS
ISO
Creepage
≥ 7.0
≥ 7.0
mm
mm
Ω
Clearance
12
Isolation resistance
V
V
= 500 V, T
= 25 °C
R
IO
IO
amb
amb
IO
IO
tot
10
11
= 500 V, T
= 100 °C
R
Ω
10
Package power dissipation
P
250
3.3
mW
Derate linearly from 25 °C
Storage temperature
mW/°C
°C
T
- 40 to + 150
- 40 to + 100
100
stg
Operating temperature
Junction temperature
Soldering temperature
T
°C
°C
°C
amb
T
j
2.0 mm from case bottom
T
260
sld
www.vishay.com
2
Document Number 83646
Rev. 1.4, 05-Nov-04
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
Typ.
1.25
Max
1.65
Unit
V
Forward voltage
I = 60 mA
V
I
F
F
Reverse current
Capacitance
V
= 6.0 V
0.01
25
10
µA
pF
R
R
V
= 0 V, f = 1.0 MHz
C
R
O
Thermal resistance, junction to
lead
T
750
K/W
thJL
Output
Parameter
Test condition
Symbol
Min
Typ.
6.8
Max
Unit
pF
Collector-emitter capacitance
V
V
= 5.0 V, f = 1.0 MHz
C
CE
CE
Collector-emitter leakage
current
= 10 V
I
5.0
50
nA
VCE
CEO
Saturation voltage, collector-
emitter
I
= 1.0 mA, I = 20 µA
V
0.25
0.4
V
CE
B
CESAT
DC forward current gain
V
V
= 10 V, I = 20 µA
HFE
200
120
650
400
1800
600
CE
B
DC forward current gain
saturated
= 0.4 V, I = 20 µA
HFE
sat
CE
B
Thermal resistance, junction to
lead
R
500
K/W
thjl
Coupler
Parameter
Test condition
Symbol
Min
Typ.
0.8
Max
Unit
pF
Capacitance (input-output)
V
= 0 V, f = 1.0 MHz
C
IO
IO
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
Min
Typ.
75
Max
Unit
Current Transfer Ratio
I = 10 mA, V = 0.4 V
ILD1
ILQ1
CTR
CTR
CTR
%
%
%
%
%
%
F
CE
CEsat
CEsat
CEsat
(collector-emitter saturated)
ILD2
ILQ2
170
100
80
ILD5
ILQ5
Current Transfer Ratio
(collector-emitter)
I = 10 mA, V = 10 V
ILD1
ILQ1
CTR
20
100
50
300
500
400
F
CE
CE
CE
CE
ILD2
ILQ2
CTR
CTR
200
130
ILD5
ILQ5
Document Number 83646
Rev. 1.4, 05-Nov-04
www.vishay.com
3
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Typical Switching Times
Non-saturated Switching Timing
Parameter
Current
Delay
Rise time
= 5.0 V, R = 75 Ω, 50 % of V
PP
Storage
Fall time
Propagation
H-L
Propagation
L-H
Test condition
Symbol
V
CE
L
I
t
t
t
t
t
t
PLH
F
D
r
S
f
PHL
Unit
mA
20
µs
0.8
µs
1.9
µs
0.2
µs
1.4
µs
µs
ILD1
ILQ1
0.7
1.2
1.1
1.4
2.3
2.5
ILD2
ILQ2
5.0
10
1.7
1.7
2.6
2.6
0.4
0.4
2.2
2.2
ILD5
ILQ5
Saturated Switching Timing
Parameter
Current
Delay
Rise time
Storage
Fall time
Propagation
H-L
Propagation
L-H
Test condition
Symbol
V
= 0.4 V, R = 1.0 kΩ, V = 5.0 V, V = 1.5 V
CE L CC TH
I
t
t
t
t
t
t
PLH
F
D
r
S
f
PHL
Unit
mA
20
µs
0.8
µs
1.2
µs
7.4
µs
7.6
µs
µs
ILD1
ILQ1
1.6
5.4
2.6
8.6
7.4
7.2
ILD2
ILQ2
5.0
10
1.0
1.7
2.0
7.0
5.4
4.6
13.5
20
ILD5
ILQ5
Common Mode Transient Immunity
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Common mode rejection,
output high
V
= 50 V , R = 1.0 kΩ,
= 0 mA
CM
5000
V/µs
V/µs
pF
CM
P-P
L
H
I
F
Common mode rejection,
output low
V
= 50 V , R = 1.0 kΩ,
CM
5000
0.01
CM
P-P
L
L
I
= 10 mA
F
Common mode coupling
capacitance
C
CM
www.vishay.com
4
Document Number 83646
Rev. 1.4, 05-Nov-04
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
IF
V
=5 V
CC
I =10 mA
F
tD
tR
V
O
VO
F=10 KHz,
DF=50%
R =75 Ω
tPLH
L
=1.5 V
VTH
iild1_01
tF
tS
tPHL
iild1_04
Figure 1. Non-saturated Switching Schematic
Figure 4. Saturated Switching Timing
1.4
1.3
1.2
I
F
T
T
= -55°C
= 25°C
A
1.1
1.0
0.9
A
t
PHL
t
PLH
V
O
T
= 100°C
A
0.8
0.7
t
S
50%
.1
1
10
100
t
F
I
- Forward Current - mA
t
t
R
F
iild1_02
D
iild1_05
Figure 2. Non-saturated Switching Timing
Figure 5. Normalized Non-Saturated and Saturated CTR vs. LED
Current
1.5
Normalized to:
V
= 10 V, I = 10 mA
F
CE
T = 25°C
A
F=10 KHz,
DF=50%
V
=5 V
O
CC
1.0
CTRce(sat) V
= 0.4 V
CE
R
L
NCTR
I =10 mA
V
F
0.5
0.0
NCTR(SAT)
iild1_03
.1
1
10
100
I
- LED Current - mA
F
iild1_06
Figure 3. Saturated Switching Schematic
Figure 6. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Document Number 83646
Rev. 1.4, 05-Nov-04
www.vishay.com
5
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
1.5
35
30
25
Normalized to:
V
= 10 V, I = 10 mA, T = 25°C
ˇ
CE
CTRce(sat) V
F
A
= 0.4 V
CE
50°C
1.0
0.5
0.0
T
= 50°C
A
20
15
NCTR
70°C
25°C
85°C
10
NCTR(SAT)
5
0
.1
1
10
100
0
10
20
30
40
50
60
I
- LED Current - mA
F
I
- LED Current - mA
F
iild1_07
iild1_10
Figure 7. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 10. Collector-Emitter Current vs. Temperature and LED
Current
1.5
5
10
Normalized to:
4
10
V
= 10 V, I = 10 mA
CE
= 25°C
F
T
A
3
10
1.0
0.5
0.0
CTRce(sat) V
= 0.4 V
NCTR
CE
2
10
T
= 70°C
A
Vce = 10 V
1
10
Typical
0
10
NCTR(SAT)
-1
10
-2
-20
10
0
20
40
60
80
100
.1
1
10
- LED Current - mA
100
T
- Ambient Temperature - °C
A
I
F
iild1_08
iild1_11
Figure 8. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 11. Collector-Emitter Leakage Current vs.Temp.
1000
1.5
2.5
2.0
Normalized to:
Ta = 25°C, IF = 10 mA
Vcc = 5 V, Vth = 1.5 V
V
= 10 V, I = 10 mA, T = 25°C
F A
CE
CTRce(sat) V
= 0.4 V
CE
tpHL
1.0
0.5
0.0
100
T
= 85°C
A
NCTR
10
1
1.5
1.0
NCTR(SAT)
tpLH
.1
1
10
100
.1
1
10
100
I
- LED Current - mA
F
R
- Collector Load Resistor - kΩ
L
iild1_09
iild1_12
Figure 9. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 12. Propagation Delay vs. Collector Load Resistor
www.vishay.com
6
Document Number 83646
Rev. 1.4, 05-Nov-04
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
4
5
3
6
1
8
2
7
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
.300 (7.62)
.031 (0.79)
typ.
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.250(6.35)
.050 (1.27)
10°
.110 (2.79)
.130 (3.30)
.020 (.51 )
.035 (.89 )
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54) typ.
i178006
Package Dimensions in Inches (mm)
pin one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10 11 12 13 14 15 16
ISO Method A
.779 (19.77 )
.790 (20.07)
.300 (7.62)
typ.
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
4°
.020(.51)
.035 (.89)
.018 (.46)
.022 (.56)
.100 (2.54)typ.
.050 (1.27)
i178007
Document Number 83646
Rev. 1.4, 05-Nov-04
www.vishay.com
7
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Option 7
Option 6
Option 9
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.375 (9.53)
.395 (10.03)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.331 (8.4)
MIN.
15° max.
18450
.315 (8.00)
min.
.406 (10.3)
MAX.
www.vishay.com
Document Number 83646
Rev. 1.4, 05-Nov-04
8
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83646
Rev. 1.4, 05-Nov-04
www.vishay.com
9
相关型号：
ILD205T-1
Optocoupler - Transistor Output, 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SOIC-8
VISHAY
ILD206T-1
Optocoupler - Transistor Output, 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SOIC-8
VISHAY
ILD206T-X001
Optocoupler - Transistor Output, 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SOIC-8
VISHAY
©2020 ICPDF网 联系我们和版权申明