ILD610-2 [VISHAY]
Optocoupler, Phototransistor Output, Dual Channel; 光电耦合器，光电晶体管输出，双通道
| 型号： | ILD610-2 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output, Dual Channel |
| 文件： | 总8页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ILD610
Vishay Semiconductors
VISHAY
Optocoupler, Phototransistor Output, Dual Channel
Features
• Dual Version of SFH610 Series
• Isolation Test Voltage, 5300 V
RMS
A
C
A
C
8
7
6
5
1
2
3
4
E
C
E
C
• V
• V
0.25 ( ≤ 0.4) V at I = 10 mA, I = 2.5 mA
F C
= 70 V
CEsat
CEO
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Pb
e3
Pb-free
i179045
put. The ILD610 series is the dual version of SFH610
series and uses a repetitive pin-out configuration
instead of the more common alternating pin-out used
in most dual couplers.
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Order Information
• CSA 93751
Part
Remarks
• BSI IEC60950 IEC60065
ILD610-1
CTR 40 - 80 %, DIP-8
ILD610-2
CTR 63 - 125 %, DIP-8
Description
ILD610-3
CTR 100 - 200 %, DIP-8
The ILD610 series is a dual channel optocoupler
series for high density applications. Each channel
consists of an optically coupled pair with a Gallium
Arsenide infrared LED and silicon NPN phototransis-
tor. Signal information, including a DC level, can be
transmitted by the device while maintaining a high
degree of electrical isolation between input and out-
ILD610-4
CTR 160 - 320 %, DIP-8
ILD610-2X007
ILD610-3X006
ILD610-3X009
ILD610-4X009
CTR 63 - 125 %, SMD-8 (option 7)
CTR 100 - 200 %, DIP-8 400 mil (option 6)
CTR 100 - 200 %, SMD-8 (option 9)
CTR 160 - 320 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
6.0
Unit
V
Reverse voltage
Surge forward current
Power dissipation
t ≤ 10 ms
IFSM
Pdiss
1.5
A
100
mW
Derate linearly from 25 °C
DC forward current
1.3
60
mW/°C
mA
IF
Document Number 83651
Rev. 1.6, 26-Oct-04
www.vishay.com
1
ILD610
Vishay Semiconductors
VISHAY
Output
Parameter
Test condition
Symbol
VCE
Value
70
Unit
V
Collector-emitter voltage
Collector current
IC
IC
50
mA
mA
t ≤ 1.0 ms
100
150
2.0
Power dissipation
Pdiss
mW
Derate linearly from 25 °C
mW/°C
Coupler
Parameter
Test condition
t = 1.0 sec.
VIO = 500 V, Tamb = 25 °C
IO = 500 V,Tamb = 100 °C
Symbol
VISO
Value
5300
Unit
Isolation test voltage
VRMS
≥ 1012
≥ 1011
Isolation resistance
RIO
RIO
Tstg
Tamb
Tj
Ω
Ω
V
Storage temperature
- 55 to + 150
°C
°C
°C
sec.
Operating temperature
Junction temperature
- 55 to + 100
100
10
Lead soldering time at 260 °C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 60 mA
Symbol
VF
Min
Typ.
1.25
Max
1.65
Unit
V
Forward voltage
Reverse current
Capacitance
V
V
R = 6.0 V
IR
0.01
25
10
µA
R = 0 V, f = 1.0 MHz
CO
pF
Output
Parameter
Test condition
Part
Symbol
Min
70
Typ.
90
Max
Unit
V
Collector-emitter breakdown
voltage
IC = 10 mA, IE = 10 µA
BVCEO
BVCEO
ICEO
6.0
7.0
2.0
7.0
2.0
V
Collector-emitter dark current
Collector-emitter capacitance
V
V
V
CE = 10 V
50
50
nA
pF
nA
CE = 5.0 V, f = 1.0 MHz
CE = 10 V
CCE
Collector-emitter leakage
current
ILD610-1
ICEO
ILD610-2
ILD610-3
ILD610-4
ICEO
ICEO
ICEO
2.0
5.0
5.0
50
nA
nA
nA
100
100
Coupler
Parameter
Test condition
Symbol
VCEsat
Min
Typ.
0.25
Max
0.40
Unit
V
Collector-emitter saturation
voltage
IF = 10 mA, IC = 2.5 mA
Coupling capacitance
CC
0.35
pF
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2
Document Number 83651
Rev. 1.6, 26-Oct-04
ILD610
Vishay Semiconductors
VISHAY
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
CTR
Min
40
Typ.
Max
80
Unit
%
CTR1)
IF = 10 mA, VCE = 5.0 V
ILD610-1
ILD610-2
ILD610-3
ILD610-4
ILD610-1
CTR
CTR
CTR
CTR
63
100
160
13
125
200
320
%
%
%
%
IF = 1.0 mA, VCE = 5.0 V
ILD610-2
ILD610-3
ILD610-4
CTR
CTR
CTR
22
34
56
%
%
%
1)CTR will match within a ratio of 1.7:1
Switching Characteristics
Non-saturated
Parameter
Rise time
Test condition
VCC = 5.0, RL = 75 Ω, IF = 10 mA
Part
Symbol
tr
Min
Typ.
2.0
Max
Unit
ILD610-1
µ
ILD610-2
ILD610-3
ILD610-4
ILD610-1
ILD610-2
ILD610-3
ILD610-4
ILD610-1
ILD610-2
ILD610-3
ILD610-4
ILD610-1
ILD610-2
ILD610-3
ILD610-4
tr
tr
2.5
2.9
3.3
2.0
2.6
3.1
3.5
3.0
3.2
3.6
2.3
2.9
3.4
3.7
4.1
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
tr
Fall time
V
V
V
CC = 5.0, RL = 75 Ω, IF = 10 mA
CC = 5.0, RL = 75 Ω, IF = 10 mA
CC = 5.0, RL = 75 Ω, IF = 10 mA
tf
tf
tf
tf
Turn-on time
Turn-off time
Saturated
ton
ton
ton
ton
toff
toff
toff
toff
Parameter
Test condition
Part
Symbol
tr
Min
Typ.
2.0
Max
Unit
Rise time
VCC = 5.0, RL = 1.0 kΩ, IF = 5.0 mA
ILD610-1
µ
ILD610-2
ILD610-3
ILD610-4
ILD610-1
ILD610-2
ILD610-3
ILD610-4
ILD610-1
ILD610-2
ILD610-3
ILD610-4
tr
tr
2.8
3.3
4.6
11
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
tr
Fall time
V
V
CC = 5.0, RL = 1.0 kΩ, IF = 5.0 mA
tf
tf
2.6
3.1
15
tf
tf
Turn-on time
CC = 5.0, RL = 1.0 kΩ, IF = 5.0 mA
ton
ton
ton
ton
3.0
4.3
4.6
6.0
Document Number 83651
Rev. 1.6, 26-Oct-04
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3
ILD610
Vishay Semiconductors
VISHAY
Parameter
Test condition
VCC = 5.0, RL = 1.0 kΩ, IF = 5.0 mA
Part
Symbol
toff
Min
Typ.
18
Max
Unit
Turn-off time
ILD610-1
µ
ILD610-2
ILD610-3
ILD610-4
toff
toff
toff
2.9
3.4
25
µ
µ
µ
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.4
1.5
1.0
0.5
0.0
Normalized to:
1. 3
V
= 10 V, I = 10 mA, T = 25°C
Ta = –55°C
Ta = 25°C
ˇ
CE
CTRce(sat) V
F
A
= 0.4 V
CE
1.2
1.1
T
= 50°C
A
1.0
0.9
Ta = 85°C
NCTR(SAT)
NCTR
0.8
0.7
.1
1
10
100
.1
1
10
100
I
- LED Current - mA
IF - Forward Current - mA
F
iilct6_01
iilct6_03
Figure 1. Forward Voltage vs. Forward Current
Figure 3. Normalized Non-Saturated and Saturated CTR vs. LED
Current
1.5
1.0
1.5
Normalized to:
Normalized to:
V
T
= 10 V, I = 10 mA
F
CE
= 25°C
V
T
= 10 V, I = 10 mA
CE
= 25°C
F
A
A
1.0
0.5
0.0
CTRce(sat) V
= 0.4 V
CE
CTRce(sat) V
CE
= 0.4 V
T
= 70°C
A
0.5
0.0
NCTR(SAT)
NCTR
NCTR(SAT)
NCTR
.1
1
10
100
.1
1
10
- LED Current - mA
100
I
- LED Current - mA
I
F
F
iilct6_02
iilct6_04
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 4. Normalized Non-Saturated and Saturated CTR vs. LED
Current
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4
Document Number 83651
Rev. 1.6, 26-Oct-04
ILD610
Vishay Semiconductors
VISHAY
1000
100
1.5
2.5
2.0
Normalized to:
= 10 V, I = 10 mA,
Ta = 25°C, IF = 10 mA
Vcc = 5 V, Vth = 1.5 V
V
T = 25°C
A
CE
CTRce(sat) V
F
= 0.4 V
CE
tpHL
1.0
0.5
0.0
T
= 85°C
A
10
1
1.5
1.0
NCTR(SAT)
NCTR
tpLH
.1
1
10
100
.1
1
10
100
I
- LED Current - mA
F
R
- Collector Load Resistor - kΩ
L
iilct6_05
iilct6_08
Figure 5. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 8. Propagation Delay vs. Collector Load Resistor
35
30
I
F
25
50°C
20
t
R
D
70°C
15
t
25°C
V
O
85°C
t
PLH
10
5
0
V
=1.5 V
TH
t
F
t
t
S
PHL
0
10
20
30
40
50
60
iild610_09
I
- LED Current - mA
F
iilct6_06
Figure 6. Collector-Emitter Current vs. Temperature and LED
Current
Figure 9. Switching Timing
5
10
4
10
V
=5 V
CC
3
10
F=10 KHz
DF=50%
2
10
R
L
Vce = 10 V
1
10
I
=10 mA
V
Typical
F
O
0
10
-1
10
-2
-20
10
0
20
40
60
80
100
iild610_10
T
- Ambient Temperature - °C
A
iilct6_07
Figure 7. Collector-Emitter Leakage Current vs.Temp.
Figure 10. Non-saturated Switching Schematic
Document Number 83651
Rev. 1.6, 26-Oct-04
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5
ILD610
Vishay Semiconductors
VISHAY
Figure 11. Saturated Switching Time Test Waveform
Input
t
t
off
on
t
t
pdoff
pdon
t
t
t
r
r
d
Output
t
s
10%
50%
90%
10%
50%
90%
iild610_11
Package Dimensions in Inches (mm)
pin one ID
4
5
3
6
1
8
2
7
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
.300 (7.62)
.031 (0.79)
typ.
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.250(6.35)
.050 (1.27)
10°
.110 (2.79)
.130 (3.30)
.020 (.51 )
.035 (.89 )
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54) typ.
i178006
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Document Number 83651
Rev. 1.6, 26-Oct-04
ILD610
Vishay Semiconductors
VISHAY
Option 7
Option 6
Option 9
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.375 (9.53)
.395 (10.03)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.331 (8.4)
MIN.
15° max.
18450
.315 (8.00)
min.
.406 (10.3)
MAX.
.430 (10.92)
Document Number 83651
Rev. 1.6, 26-Oct-04
www.vishay.com
7
ILD610
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83651
Rev. 1.6, 26-Oct-04
相关型号：
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