ILD621 [VISHAY]
Optocoupler, Phototransistor Output (Dual, Quad Channel); 光电耦合器，光电晶体管输出（双通道，四通道）
| 型号： | ILD621 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output (Dual, Quad Channel) |
| 文件： | 总10页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ILD621/ GB/ ILQ621/ GB
VISHAY
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
• Alternate Source to TLP621-2/-4 and
Dual Channel
TLP621GB-2/-4
• High Collector-Emitter Voltage, BVCEO=70 V
• Dual and Quad Packages Feature:
- Lower Pin and Parts Count
1
2
3
4
8
7
6
5
C
E
C
E
A
C
A
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
C
• Isolation Test Voltage 5300 VRMS
Agency Approvals
• UL File # E52744 System Code H or J
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
C
A
C
A
Quad Channel
E
C
E
C
E
C
E
• BSI IEC60950 IEC60965
• FIMKO
C
A
C
Description
A
C
The ILD621/ ILQ621 and ILD621GB/ ILQ621GB are
multi-channel phototransistor optocouplers that use
GaAs IRLED emitters and high gain NPN silicon pho-
totransistors. These devices are constructed using
double molded insulation technology. This assembly
process offers a withstand test voltage of 7500 VDC.
The ILD621/ ILQ621GB is well suited for CMOS inter-
facing given the CTR CE sat of 30 % minimum at I F of
1.0 mA. High gain linear operation is guaranteed by a
minimum CTR CE of 100 % at 5.0 mA. The ILD/Q621
has a guaranteed CTR CE 50 % minimum at 5.0 mA.
The TRansparent IOn Shield insures stable DC gain
in applications such as power supply feedback cir-
cuits, where constant DC VIO voltages are present.
i179054
Order Information
Part
Remarks
ILD621
CTR > 50 %, DIP-8
CTR > 100 %, DIP-8
CTR > 50 %, DIP-16
CTR > 100 %, DIP-16
ILD621GB
ILQ621
ILQ621GB
ILD621-X006
ILD621-X007
ILD621-X009
ILD621GB-X007
ILQ621-X006
ILQ621-X007
ILQ621-X009
ILQ621GB-X006
ILQ621GB-X007
ILQ621GB-X009
CTR > 50 %, DIP-8 400 mil (option 6)
CTR > 50 %, SMD-8 (option 7)
CTR > 50 %, SMD-8 (option 9)
CTR > 100 %, SMD-8 (option 7)
CTR > 50 %, DIP-8 400 mil (option 6)
CTR > 50 %, SMD-16 (option 7)
CTR > 50 %, SMD-16 (option 9)
CTR > 100 %, DIP-16 400 mil (option 6)
CTR > 100 %, SMD-16 (option 7)
CTR > 100 %, SMD-16 (option 9)
For additional information on the available options refer to
Option Information.
Document Number 83654
Rev. 1.3, 19-Apr-04
www.vishay.com
1
ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
6.0
Unit
V
Reverse voltage
V
R
Forward current
Surge current
I
60 mA
1.5
mA
A
F
I
FSM
Power dissipation
Derate from 25 °C
P
100
mW
diss
1.33
mW/°C
Output
Parameter
Test condition
Symbol
Value
70
Unit
V
Collector -emitter reverse
voltage
V
ECO
Collector current
I
I
50
mA
mA
C
t < 1.0 ms
100
150
- 2.0
C
Power dissipation
Derate from 25 °C
P
mW
diss
mW/°C
Coupler
Parameter
Test condition
t = 1.0 sec.
Part
Symbol
Value
5300
Unit
Isolation test voltage
V
V
RMS
ISO
Package dissipation
ILD621
400
400
mW
mW
ILD621GB
Derate from 25 °C
Package dissipation
5.33
500
mW/°C
mW
ILQ621
ILQ621GB
500
mW
Derate from 25 °C
Creepage
6.67
≥ 7.0
≥ 7.0
mW/°C
mm
Clearance
mm
12
Isolation resistance
V
V
= 500 V, T
= 25 °C
R
Ω
IO
IO
amb
IO
IO
≥ 10
11
= 500 V, T
= 100 °C
R
Ω
amb
≥ 10
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
T
- 55 to +150
- 55 to +100
100
°C
°C
°C
°C
stg
T
amb
T
j
2.0 mm from case bottom
T
260
sld
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2
Document Number 83654
Rev. 1.3, 19-Apr-04
ILD621/ GB/ ILQ621/ GB
VISHAY
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
1.0
Typ.
1.15
Max
1.3
Unit
V
Forward voltage
I = 10 mA
V
I
F
F
Reverse current
Capacitance
V
= 6.0 V
0.01
40
10
µA
pF
R
R
V
= 0, f = 1.0 MHz
C
F
O
Thermal resistance, Junction to
lead
R
750
K/W
THJL
Output
Parameter
Test condition
Symbol
Min
Typ.
6.8
Max
Unit
pF
Collector-emitter capacitance
V
V
= 5.0 V, f = 1.0 MHz
= 24 V
C
CE
CE
CE
Collector-emitter leakage
current
I
10
100
50
nA
CEO
I
20
µA
CEO
Thermal resistance, Junction to
lead
R
500
K/W
THJL
Coupler
Parameter
Test condition
Part
Symbol
Min
0.8
Typ.
Max
Unit
Capacitance (input-output)
V
V
= 0 V, f = 1.0 MHz
C
pF
IO
IO
IO
12
Insulation resistance
= 500 V
Ω
10
Channel to channel insulation
500
VAC
V
Collector-emitter saturation
voltage
I = 8.0 mA, I = 2.4 mA
ILD621
ILQ621
V
V
0.4
0.4
F
CE
CEsat
CEsat
I = 1.0 mA, I = 0.2 mA
ILD621GB
ILQ621GB
V
F
CE
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
Min
Typ.
60
Max
Unit
Channel/Channel CTR match
I = 5.0 mA, V = 5.0 V
CTRX/
CTRY
1 to 1
3 to 1
F
CE
Current Transfer Ratio
(collector-emitter saturated)
I = 1.0 mA, V = 0.4 V
ILD621
ILQ621
CTR
%
%
%
%
F
CE
CEs
at
ILD621GB
ILQ621GB
CTR
30
50
CEs
at
Current Transfer Ratio
(collector-emitter)
I = 5.0 mA, V = 5.0 V
ILD621
ILQ621
CTR
80
600
600
F
CE
CE
CE
ILD621GB
ILQ621GB
CTR
100
200
Document Number 83654
Rev. 1.3, 19-Apr-04
www.vishay.com
3
ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors
VISHAY
Switching Characteristics
Non-saturated switching timing
Parameter
Test condition
Symbol
Min
Typ.
3.0
Max
Unit
On Time
Rise time
Off time
Fall time
I
=
10 mA, V = 5.0 V,
t
µs
F
CC
on
R = 75 Ω, 50 % of V
L
PP
I
=
10 mA, V = 5.0 V,
t
2.0
2.3
2.0
1.1
2.5
µs
µs
µs
µs
µs
F
CC
r
R = 75 Ω, 50 % of V
L
PP
I
=
10 mA, V = 5.0 V,
t
F
CC
off
R = 75 Ω, 50 % of V
L
PP
I
=
10 mA, V = 5.0 V,
t
F
CC
f
R = 75 Ω, 50 % of V
L
PP
Propagation H-L
Propagation L-H
I
=
10 mA, V = 5.0 V,
t
F
CC
PHL
R = 75 Ω, 50 % of V
L
PP
I
=
10 mA, V = 5.0 V,
t
F
CC
PLH
R = 75 Ω, 50 % of V
L
PP
Saturated switching timing
Parameter
Test condition
Symbol
Min
Typ.
4.3
Max
Unit
On time
I
=
10 mA, V = 5.0 V,
t
µs
F
CC
on
R = 1.0 KΩ, V = 1.5 V
L
TH
Rise time
I
=
10 mA, V = 5.0 V,
t
2.8
2.5
11
µs
µs
µs
µs
µs
F
CC
r
R = 1.0 KΩ, V = 1.5 V
L
TH
Off time
I
=
10 mA, V = 5.0 V,
t
F
CC
off
R = 1.0 KΩ, V = 1.5 V
L
TH
Fall time
I
=
10 mA, V = 5.0 V,
t
F
CC
f
R = 1.0 KΩ, V = 1.5 V
L
TH
Propagation H-L
Propagation L-H
I
=
10 mA, V = 5.0 V,
t
2.6
7.2
F
CC
PHL
R = 1.0 KΩ, V = 1.5 V
L
TH
I
=
10 mA, V = 5.0 V,
t
F
CC
PLH
R = 1.0 KΩ, V = 1.5 V
L
TH
Common Mode Transient Immunity
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Common mode rejection output
high
V
= 50 V , R = 1.0 KΩ,
= 0 mA
CM
5000
V/µs
CM
P-P
L
H
I
F
Common mode rejection output
low
V
= 50 V , R = 1.0 KΩ,
= 10 mA
CM
5000
V/µs
CM
P-P
L
L
I
F
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4
Document Number 83654
Rev. 1.3, 19-Apr-04
ILD621/ GB/ ILQ621/ GB
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
I
F
V
CC
= 5 V
F = 10 KHz,
DF = 50%
t
R
PLH
L
t
PLH
V
V
O
O
t
S
50%
iild621_04
t
F
t
t
R
D
iild621_01
Fig. 1 Non-saturated Switching Timing
Fig. 4 Saturated Switching Timing
120
100
V
= 5 V
CC
80
60
I
= 10 mA
F
V
TJ (MAX) = 100 °C
O
40
RL = 75 Ω
F = 10 KHz,
DF = 50%
20
0
iild621_02
-60 -40 -20
0
20
40 60
80 100
T
- Ambient Temperature - °C
A
iild621_05
Fig. 2 Non-saturated Switching Timing
Fig. 5 Maximum LED Current vs. Ambient Temperature
200
150
I
F
t
D
100
t
R
V
O
t
PLH
50
0
V
t
= 1.5 V
TH
t
t
S
F
PHL
iild621_03
-60 -40 -20
0
20
40
60
80 100
iild621_06
Ta - Ambient Temperature - °C
Fig. 3 Saturated Switching Timing
Fig. 6 Maximum LED Power Dissipation
Document Number 83654
Rev. 1.3, 19-Apr-04
www.vishay.com
5
ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors
VISHAY
1000
100
1.4
2.5
2.0
I
V
= 10 mA
F
1.3
= 5 V, Vth = 1.5 V
CC
T
= 85 °C
A
1.2
1.1
t
PLH
T
= 85 °C
A
1.0
0.9
10
1
1.5
1.0
T
= 85° C
t
A
PHL
0.8
0.7
.1
1
10
100
.1
1
10
100
R
- Collector Load Resistor - kΩ
I
- Forward Current - mA
L
F
iild621_07
iild621_10
Fig. 7 Forward Voltage vs. Forward Current
Fig. 10Propagation Delay vs. Collector Load Resistor
200
150
100
50
35
30
25
50°C
20
70°C
15
25°C
85°C
10
5
0
0
0
10
20
30
40
50
60
-60 -40 -20
0
20
40
60
80 100
T
- Ambient Temperature - °C
I
- LED Current - mA
A
F
iild621_08
iild621_11
Fig. 8 Collector-Emitter Current vs. Temperature and LED
Current
Fig. 11Maximum Detector Power Dissipation
1000
5
10
4
10
100
10
1
Rth = 500 °C/W
3
10
2
10
V
= 10 V
CE
1
10
10
10
25 °C
50 °C
75 °C
90 °C
Typical
40
0
-1
.1
-2
-20
10
0
20
60
80
100
10
- Collector-Emitter Voltage - V
100
.1
1
T
- Ambient Temperature - °C
A
V
CE
iild621_12
iild621_09
Fig. 9 Collector-Emitter Leakage vs. Temperature
Fig. 12Maximum Collector Current vs. Collector Voltage
www.vishay.com
6
Document Number 83654
Rev. 1.3, 19-Apr-04
ILD621/ GB/ ILQ621/ GB
VISHAY
Vishay Semiconductors
2.0
Normalized to:
= 10 V, I = 5 mA,
V
CE
F
1.5
1.0
0.5
0.0
CTRce(sat) V = 0.4 V
CE
NCTRce
NCTRce(sat)
= 50 °C
T
A
.1
1
10
- LED Current - mA
100
I
F
iild621_13
Fig. 13Normalization Factor for Non-saturated and Saturated CTR
vs. I
F
2.0
Normalized to:
= 10 V, I = 5 mA,
V
CE
F
1.5
1.0
0.5
0.0
CTRce(sat) V = 0.4 V
CE
NCTRce
NCTRce(sat)
= 70 °C
T
A
.1
1
10
- LED Current - mA
100
I
F
iild621_14
Fig. 14Normalization Factor for Non-saturated and Saturated CTR
vs. I
F
2.0
Normalized to:
= 10 V, I = 5 mA,
V
CE
F
1.5
1.0
0.5
0.0
CTRce(sat) V = 0.4 V
CE
NCTRce
NCTRce(sat)
T
= 100 °C
A
.1
1
10
100
I
- LED Current - mA
F
iild621_15
Fig. 15Normalization Factor for Non-saturated and Saturated CTR
vs. I
F
Document Number 83654
Rev. 1.3, 19-Apr-04
www.vishay.com
7
ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors
VISHAY
Package Dimensions in Inches (mm)
pin one ID
4
5
3
6
1
8
2
7
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
.300 (7.62)
.031 (0.79)
typ.
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.250(6.35)
.050 (1.27)
10°
.110 (2.79)
.130 (3.30)
.020 (.51 )
.035 (.89 )
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54) typ.
i178006
Package Dimensions in Inches (mm)
pin one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10 11 12 13 14 15 16
ISO Method A
.779 (19.77 )
.790 (20.07)
.300 (7.62)
typ.
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
4°
.020(.51)
.035 (.89)
.018 (.46)
.022 (.56)
.100 (2.54)typ.
.050 (1.27)
i178007
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8
Document Number 83654
Rev. 1.3, 19-Apr-04
ILD621/ GB/ ILQ621/ GB
VISHAY
Vishay Semiconductors
Option 7
Option 6
Option 9
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.375 (9.53)
.395 (10.03)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.331 (8.4)
MIN.
15° max.
18450
.315 (8.00)
min.
.406 (10.3)
MAX.
.430 (10.92)
Document Number 83654
Rev. 1.3, 19-Apr-04
www.vishay.com
9
ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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10
Document Number 83654
Rev. 1.3, 19-Apr-04
相关型号：
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