ILQ615 [VISHAY]
Optocoupler, Phototransistor Output (Dual, Quad Channel); 光电耦合器，光电晶体管输出（双通道，四通道）
| 型号： | ILQ615 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output (Dual, Quad Channel) |
| 文件： | 总11页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ILD615/ ILQ615
Vishay Semiconductors
VISHAY
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
• Identical Channel to Channel Footprint
Dual Channel
• Dual and Quad Packages Feature:
- Reduced Board Space
1
2
3
4
8
7
6
5
C
E
C
E
A
C
A
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
• Isolation Test Voltage from Double Molded Pack-
age, 5300 VRMS
C
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Quad Channel
1
16
15
14
13
12
11
10
9
A
C
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
• BSI IEC60950 IEC60965
2
3
4
5
6
7
8
C
A
E
C
E
C
E
C
E
C
A
C
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
A
C
i179052
both level detection and switching applications. Inter-
facing with a CMOS logic is enhanced by the guaran-
teed CTR at IF = 1.0 mA.
Description
The ILD615/ ILQ615 are multi-channel phototransis-
tor optocouplers that use GaAs IRLED emitters and
high gain NPN phototransistors. These devices are
constructed using over/under leadframe optical cou-
pling and double molded insulation technology result-
ing a withstand test voltage of 7500 VACPEAK and a
working voltage of 1700 VRMS
.
The binned min./max. and linear CTR characteristics
make these devices well suited for DC or AC voltage
detection. Eliminating the phototransistor base con-
nection provides added electrical noise immunity from
the transients found in many industrial control envi-
ronments.
Because of guaranteed maximum non-saturated and
saturated switching characteristics, the ILD615/
ILQ615 can be used in medium speed data I/O and
control systems. The binned min./max. CTR specifi-
cation allow easy worst case interface calculations for
Document Number 83652
Rev. 1.3, 19-Apr-04
www.vishay.com
1
ILD615/ ILQ615
Vishay Semiconductors
VISHAY
Order Information
Part
Remarks
ILD615-1
CTR 40 - 80 %, Dual Channel, DIP-8
CTR 63 - 125 %, Dual Channel, DIP-8
CTR 100 - 200 %, Dual Channel, DIP-8
CTR 160 - 320 %, Dual Channel, DIP-8
CTR 40 - 80 %, Quad Channel, DIP-16
CTR 63 - 125 %, Quad Channel, DIP-16
CTR 100 - 200 %, Quad Channel, DIP-16
CTR 160 - 320 %, Quad Channel, DIP-16
ILD615-2
ILD615-3
ILD615-4
ILQ615-1
ILQ615-2
ILQ615-3
ILQ615-4
ILD615-1X007
CTR 40 - 80 %, Dual Channel, SMD-8
(option 7)
ILD615-2X006
ILD615-2X009
ILD615-3X006
ILD615-3X007
ILD615-3X009
ILD615-4X006
ILD615-4X009
ILQ615-1X009
ILQ615-2X007
ILQ615-3X006
ILQ615-3X009
ILQ615-4X007
ILQ615-4X009
CTR 63 - 125 %, Dual Channel, DIP-8 400
mil (option 6)
CTR 63 - 125 %, Dual Channel, SMD-8
(option 9)
CTR 100 - 200 %, Dual Channel, DIP-8
400 mil (option 6)
CTR 100 - 200 %, Dual Channel, SMD-8
(option 7)
CTR 100 - 200 %, Dual Channel, SMD-8
(option 9)
CTR 160 - 320 %, Dual Channel, DIP-8
400 mil (option 6)
CTR 160 - 320 %, Dual Channel, SMD-8
(option 9)
CTR 40 - 80 %, Quad Channel, SMD-16
(option 9)
CTR 63 - 125 %, Quad Channel, SMD-16
(option 7)
CTR 100 - 200 %, Quad Channel, DIP-16
400 mil (option 6)
CTR 100 - 200 %, Quad Channel, SMD-16
(option 9)
CTR 160 - 320 %, Quad Channel, SMD-16
(option 7)
CTR 160 - 320 %, Quad Channel, SMD-16
(option 9)
For additional information on the available options refer to
Option Information.
www.vishay.com
2
Document Number 83652
Rev. 1.3, 19-Apr-04
ILD615/ ILQ615
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
6.0
Unit
V
Reverse voltage
V
R
Forward current
I
60
1.5
mA
A
F
Surge current
I
FSM
Power dissipation
Derate linearly from 25 °C
P
100
1.33
mW
diss
mW/°C
Output
Parameter
Test condition
Symbol
Value
70
Unit
V
Collector-emitter breakdown
voltage
BV
CEO
Emitter-collector breakdown
voltage
BV
7.0
V
ECO
Collector current
I
I
50
mA
mA
C
t < 1.0 ms
100
150
2.0
C
Power dissipation
P
mW
diss
Derate linearly from 25 °C
mW/°C
Coupler
Parameter
Test condition
Symbol
Value
Unit
°C
Storage temperature
T
- 55 to + 150
stg
Operating temperature
Junction temperature
Soldering temperature
T
- 55 to + 100
100
°C
°C
°C
amb
T
j
2.0 mm distance from case
bottom
T
260
sld
Package power dissipation,
ILD615
400
mW
Derate linearly from 25 °C
5.33
500
mW/°C
mW
Package power dissipation,
ILQ615
Derate linearly from 25 °C
Isolation test voltage
6.67
mW/°C
t = 1.0 sec.
V
5300
V
RMS
ISO
Creepage
≥ 7.0
≥ 7.0
mm
mm
Ω
Clearance
12
Isolation resistance
V
V
= 500 V, T
= 500 V, T
= 25 °C
R
IO
IO
amb
amb
IO
IO
≥ 10
11
= 100 °C
R
Ω
≥ 10
Document Number 83652
Rev. 1.3, 19-Apr-04
www.vishay.com
3
ILD615/ ILQ615
Vishay Semiconductors
VISHAY
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
= 10 mA
Symbol
Min
1.0
Typ.
1.15
Max
1.3
Unit
V
Forward voltage
I
I
V
F
F
Breakdown voltage
Reverse current
Capacitance
= 10 µA
V
6.0
30
0.01
25
V
µA
R
BR
V
V
= 6.0 V
I
10
R
R
= 0 V, f = 1.0 MHz
C
pF
R
O
Thermal resistance, junction to
lead
R
750
K/W
THJL
Output
Parameter
Test condition
Symbol
Min
Typ.
6.8
Max
Unit
pF
Collector-emitter capacitance
V
V
= 5.0 V, f = 1.0 MHz
= 10 V
C
CE
CE
CE
Collector-emitter leakage
current, -1, -2
I
2.0
50
nA
nA
V
CEO
Collector-emitter leakage
current, -3, -4
V
= 10 V
I
5.0
100
CE
CEO
Collector-emitter breakdown
voltage
I
I
= 0.5 mA
BV
BV
70
CE
CEO
Emitter-collector breakdown
voltage
= 0.1 mA
7.0
V
E
F
ECO
Thermal resistance, junction to
lead
R
500
K/W
THJL
Package transfer characteristics
Channel/Channel CTR match
I
= 10 mA, V = 5.0 V
CTRX/
CTRY
1 to 1
2 to 1
Max
CE
Coupler
Parameter
Test condition
Symbol
Min
Typ.
0.8
Unit
pF
Capacitance (input-output)
V
V
= 0 V, f = 1.0 MHz
C
IO
IO
IO
12
14
Insulation resistance
= 500 V, T = 25 °C
R
Ω
A
S
10
10
Channel to channel isolation
500
VAC
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Current Transfer Ratio
(collector-emitter saturated)
I
= 10 mA, V = 0.4 V
ILD615-1
ILQ615-1
CTR
CTR
CTR
CTR
25
%
%
%
%
F
CE
CEsat
CEsat
CEsat
CEsat
ILD615-2
ILQ615-2
40
ILD615-3
ILQ615-3
60
ILD615-4
ILQ615-4
100
www.vishay.com
4
Document Number 83652
Rev. 1.3, 19-Apr-04
ILD615/ ILQ615
VISHAY
Vishay Semiconductors
Parameter
Test condition
I = 10 mA, V = 5.0 V
Part
Symbol
Min
40
Typ.
60
Max
80
Unit
%
Current Transfer Ratio
(collector-emitter)
ILD615-1
ILQ615-1
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
F
CE
CE
CE
CE
CE
CE
CE
CE
CE
I = 1.0 mA, V = 5.0 V
ILD615-2
ILQ615-2
13
63
30
80
%
%
%
%
%
%
%
F
CE
I = 10 mA, V = 5.0 V
ILD615-3
ILQ615-3
125
200
320
F
CE
I = 1.0 mA, V = 5.0 V
ILD615-4
ILQ615-4
22
45
F
CE
I = 10 mA, V = 5.0 V
ILD615-1
ILQ615-1
100
34
150
70
F
CE
I = 1.0 mA, V = 5.0 V
ILD615-2
ILQ615-2
F
CE
I = 10 mA, V = 5.0 V
ILD615-3
ILQ615-3
160
56
200
90
F
CE
I = 1.0 mA, V = 5.0 V
ILD615-4
ILQ615-4
F
CE
Switching Non-saturated
Parameter
Current
Turn-on time
Rise time
Turn-off time
Fall time
Propagation
H-L
Propagation
L-H
Test condition
Symbol
V
= 5.0 V, R = 75 Ω, 50 % of V
CC L PP
I
t
t
t
t
t
t
PLH
F
on
r
off
f
PHL
Unit
mA
10
µs
3.0
µs
2.0
µs
2.3
µs
2.0
µs
1.1
µs
2.5
ILD615-1
Switching Saturated
Parameter
Current
Turn-on time
Rise time
Turn-off time
Fall time
Propagation
H-L
Propagation
L-H
Test condition
Symbol
V
= 5.0 V, R = 1.0 kΩ, V = 1.5 V
CC L TH
I
t
t
t
t
t
t
PLH
F
on
r
off
f
PHL
Unit
mA
20
µs
3.0
µs
2.0
µs
18
µs
11
µs
µs
ILD615-1
ILQ615-1
1.6
2.6
2.6
5.4
8.6
7.2
7.2
7.4
ILD615-2
ILQ615-2
10
10
4.3
4.3
6.0
2.8
2.8
4.6
25
25
25
14
14
15
ILD615-3
ILQ615-3
ILD615-4
ILQ615-4
5.0
Common Mode Transient Immunity
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Common mode rejection output
high
V
= 50 V , R = 1.0 kΩ,
CM
5000
V/µs
V/µs
pF
CM
P-P
L
H
I = 0 mA
F
Common mode rejection output
low
V
= 50 V , R = 1.0 kΩ,
CM
5000
0.01
CM
P-P
L
L
I = 10 mA
F
Common mode coupling
capacitance
C
CM
Document Number 83652
Rev. 1.3, 19-Apr-04
www.vishay.com
5
ILD615/ ILQ615
Vishay Semiconductors
VISHAY
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
I
F
V
= 5 V
CC
t
D
I
= 10 mA
F
t
R
V
O
V
O
t
RL = 75 Ω
PLH
F = 10 KHz,
DF = 50%
V
t
= 1.5 V
TH
t
t
S
F
PHL
iild615_01
iild615_04
Figure 1. Non-saturated Switching Timing
Figure 4. Saturated Switching Timing
120
100
F = 10 KHz,
DF = 50%
80
60
V
= 5 V
CC
R
L
V
O
TJ (MAX) = 100 °C
40
20
0
iild615_02
-60 -40 -20
0
20
40 60
80 100
Ta - Ambient Temperature - °C
iild615_05
Figure 2. Saturated Switching Timing
Figure 5. Maximum LED Current vs. Ambient Temperature
200
150
I
F
t
PLH
100
t
PLH
V
O
t
S
50
0
50%
t
F
t
t
R
-60 -40 -20
0
20
40
60
80 100
D
t
t
iild615_06
Ta - Ambient Temperature - °C
iild615_03
on
off
Figure 3. Non-saturated Switching Timing
Figure 6. Maximum LED Power Dissipation
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6
Document Number 83652
Rev. 1.3, 19-Apr-04
ILD615/ ILQ615
VISHAY
Vishay Semiconductors
1.4
1000
100
10
1. 3
Ta = –55 °C
Ta = 25 °C
Rth = 500 °C/W
1.2
1.1
25 °C
50 °C
75 °C
90 °C
1.0
0.9
1
Ta = 85° C
0.8
.1
.1
10
- Collector-Emitter Voltage - V
100
1
0.7
.1
V
CE
1
10
100
IF - Forward Current - mA
iild615_10
iild615_07
Figure 7. Forward Voltage vs. Forward Current
Figure 10. Maximum Collector Current vs. Collector Voltage
10000
1000
100
2.0
ˇ
Normalized to:
Duty F actor
V
= 10 V, I = 5 mA,
CE
F
1.5
1.0
0.5
0.0
CTRce(sat) V = 0.4 V
.005
CE
.01
t
DF = /t
.02
NCTRce
NCTRce(sat)
.05
.1
.2
.5
T
= 25 °C
A
.1
1
10
- LED Current - mA
100
10
10
I
F
-6
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t - LED Pulse Duration - s
iild615_08
iild615_11
Figure 8. Peak LED Current vs. Pulse Duration, Tau
Figure 11. Normalization Factor for Non-saturated and Saturated
CTR vs. I
F
200
2.0
1.5
1.0
0.5
0.0
Normalized to:
= 10 V, I = 5 mA,
V
CE
F
CTRce(sat) V = 0.4 V
CE
150
100
50
NCTRce
NCTRce(sat)
= 50 °C
T
A
.1
1
10
- LED Current - mA
100
0
I
F
-60 -40 -20
0
20
40
60
80 100
Ta - Ambient Temperature - °C
iild615_09
iild615_12
Figure 9. Maximum Detector Power Dissipation
Figure 12. Normalization Factor for Non-saturated and Saturated
CTR vs. I
F
Document Number 83652
Rev. 1.3, 19-Apr-04
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7
ILD615/ ILQ615
Vishay Semiconductors
VISHAY
2.0
5
4
10
10
Normalized to:
V
= 10 V, I = 5 mA,
CE
F
1.5
1.0
0.5
0.0
CTRce(sat) V = 0.4 V
CE
3
2
10
10
NCTRce
Vce = 10 V
1
10
10
10
NCTRce(sat)
= 70 °C
Typical
40
0
T
A
-1
.1
1
10
- LED Current - mA
100
-2
-20
10
0
20
60
80
100
I
F
T
- Ambient Temperature - °C
A
iild615_13
iild615_16
Figure 13. Normalization Factor for Non-saturated and Saturated
CTR vs. I
Figure 16. Collector Emitter Leakage vs. Temperature
F
1000
2.0
1.5
1.0
0.5
0.0
4.0
3.5
Normalized to:
= 10 V, I = 5 mA,
I
V
= 10 mA
F
V
CE
F
= 5 V, Vth = 1.5 V
CC
CTRce(sat) V = 0.4 V
CE
3.0
100
tpLH
2.5
2.0
NCTRce
10
1
tpHL
NCTRce(sat)
1.5
1.0
T
= 100 °C
A
.1
1
10
100
I
- LED Current - mA
.1
1
10
100
F
R
- Load Resistor - kΩ
L
iild615_14
iild615_17
Figure 14. Normalization Factor for Non-saturated and Saturated
Figure 17. -1, Propagation Delay vs. Collector Load Resistor
CTR vs. I
F
1000
100
2.5
2.0
35
30
25
I
V
= 10 mA
F
= 5 V, Vth = 1.5 V
CC
50°C
tpLH
20
15
70°C
25°C
85°C
10
1
1.5
1.0
10
tpHL
5
0
.1
1
10
100
0
10
20
30
40
50
60
R
- Collector Load Resistor - kΩ
L
I
- LED Current - mA
F
iild615_15
iild615_18
Figure 15. Collector-Emitter Current vs. Temperature and LED
Current
Figure 18. -2, -3, Propagation Delay vs. Collector Load Resistor
www.vishay.com
8
Document Number 83652
Rev. 1.3, 19-Apr-04
ILD615/ ILQ615
VISHAY
Vishay Semiconductors
Figure 19. -4, Propagation Delay vs. Collector Load Resistor
1000
2.5
2.0
I
V
= 10 mA
F
= 5 V, Vth = 1.5 V
CC
100
tpLH
10
1
1.5
1.0
tpHL
.1
1
10
100
R
- Collector Load Resistor - kΩ
L
iild615_19
Package Dimensions in Inches (mm)
pin one ID
4
5
3
6
1
8
2
7
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
.300 (7.62)
.031 (0.79)
typ.
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.250(6.35)
.050 (1.27)
10°
.110 (2.79)
.130 (3.30)
.020 (.51 )
.035 (.89 )
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54) typ.
i178006
Document Number 83652
Rev. 1.3, 19-Apr-04
www.vishay.com
9
ILD615/ ILQ615
Vishay Semiconductors
VISHAY
Package Dimensions in Inches (mm)
pin one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10 11 12 13 14 15 16
ISO Method A
.779 (19.77 )
.790 (20.07)
.300 (7.62)
typ.
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
4°
.020(.51)
.035 (.89)
.018 (.46)
.022 (.56)
.100 (2.54)typ.
.050 (1.27)
i178007
Option 7
Option 6
Option 9
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.375 (9.53)
.395 (10.03)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.331 (8.4)
MIN.
15° max.
.315 (8.00)
min.
.406 (10.3)
MAX.
18450
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10
Document Number 83652
Rev. 1.3, 19-Apr-04
ILD615/ ILQ615
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83652
Rev. 1.3, 19-Apr-04
www.vishay.com
11
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