ILQ66-4-X019 [VISHAY]
Darlington Output Optocoupler, 4-Element, 5300V Isolation, ROHS COMPLIANT, SMD-16, DIP-16;
| 型号： | ILQ66-4-X019 |
| 厂家： | 
VISHAY |
| 描述： | Darlington Output Optocoupler, 4-Element, 5300V Isolation, ROHS COMPLIANT, SMD-16, DIP-16 |
| 文件： | 总10页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IL66/ ILD66/ ILQ66
VISHAY
Vishay Semiconductors
Optocoupler, Photodarlington Output, With Internal Rbe (Single,
Dual, Quad Channel)
Single Channel
A
C
1
2
3
6
5
4
B
C
E
Features
• Internal RBE for High Stability
• Four Available CTR Categories per Package Type
NC
• BV
> 60 V
CEO
• Standard DIP Packages
• Lead-free component
Dual Channel
8
7
6
5
A
E
1
2
3
4
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
C
C
A
C
C
E
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
A
C
C
A
E
16
1
2
3
4
5
6
7
8
Quad Channel
C
C
E
E
C
C
E
15
14
13
12
11
10
9
Description
A
IL66, ILD66, and ILQ66 are optically coupled isolators
employing Gallium Arsenide infrared emitters and sil-
icon photodarlington detectors. Switching can be
accomplished while maintaining a high degree of iso-
lation between driving and load circuits, with no
crosstalk between channels.
C
C
A
i179014
Pb
e3
Pb-free
Order Information
Part
ILD66-2X007
ILD66-3X009
ILD66-4X009
ILQ66-4X007
ILQ66-4X009
Remarks
Part
Remarks
CTR ≥ 300 %, SMD-8 (option 7)
CTR ≥ 400 %, SMD-8 (option 9)
CTR ≥ 500 %, SMD-8 (option 9)
CTR ≥ 500 %, SMD-16 (option 7)
CTR ≥ 500 %, SMD-16 (option 9)
IL66-1
CTR ≥ 100 %, DIP-6
IL66-2
CTR ≥ 300 %, DIP-6
CTR ≥ 400 %, DIP-6
CTR ≥ 500 %, DIP-6
CTR ≥ 100 %, DIP-8
CTR ≥ 300 %, DIP-8
CTR ≥ 400 %, DIP-8
CTR ≥ 500 %, DIP-8
CTR ≥ 100 %, DIP-16
CTR ≥ 300 %, DIP-16
CTR ≥ 400 %, DIP-16
CTR ≥ 500 %, DIP-16
CTR ≥ 500 %, SMD-8 (option 9)
IL66-3
IL66-4
ILD66-1
ILD66-2
ILD66-3
ILD66-4
ILQ66-1
ILQ66-2
ILQ66-3
ILQ66-4
For additional information on the available options refer to
Option Information.
IL66-4X009
Document Number 83638
Rev. 1.5, 26-Oct-04
www.vishay.com
1
IL66/ ILD66/ ILQ66
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Each Channel
Parameter
Test condition
Symbol
VRM
Value
6.0
Unit
V
Peak reverse voltage
Forward continuous current
Power dissipation
IF
60
mA
mW
Pdiss
100
1.33
Derate linearly from 25 °C
mW/°C
Output
Parameter
Test condition
Test condition
Symbol
Pdiss
Value
150
Unit
mW
Power dissipation
Derate linearly from 25°C
2.0
mW/°C
Coupler
Parameter
Part
Symbol
VISO
Value
5300
Unit
Isolation test voltage
t = 1.0 sec.
VRMS
mW
mW
mW
Total package power dissipation
IL66
Ptot
Ptot
Ptot
250
400
500
ILD66
ILQ66
Derate linearly from 25 °C
IL66
3.3
5.33
6.67
≥ 7.0
≥ 7.0
175
mW/°C
mW/°C
mW/°C
min
ILD66
ILQ66
Creepage
Clearance
min
Comparative tracking index
Isolation resistance
≥ 1012
≥ 1011
VIO = 500 V, Tamb = 25 °C
IO = 500 V, Tamb = 100 °C
RIO
RIO
Ω
Ω
V
Storage temperature
Tstg
Tamb
- 55 to + 125
- 55 to + 100
10
°C
°C
sec.
Operating temperature
Lead soldering time at 260 °C
www.vishay.com
2
Document Number 83638
Rev. 1.5, 26-Oct-04
IL66/ ILD66/ ILQ66
VISHAY
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
GaAs Emitter
Parameter
Forward voltage
Test condition
IF = 20 mA
Symbol
VF
Min
Typ.
1.25
Max
1.5
Unit
V
Reverse current
Capacitance
V
V
R = 6.0 V
R = 0 V
IR
0.1
25
10
µA
CO
pF
Output
Parameter
Test condition
Symbol
BVCEO
Min
60
Typ.
Max
100
Unit
V
Collector-emitter breakdown
voltage
IC = 1.0 mA, IF = 0
Collector-base breakdown
voltage (IL66)
IC = 10 µA
BVCBO
ICEO
60
V
Collector-emitter leakage
current
VCE = 50 V, IF = 0
1.0
3.4
nA
pF
Capacitance, collector-emitter
VCE = 10 V
Coupler
Parameter
Test condition
IC = 10 mA, IF = 10 mA
Symbol
VCEsat
Min
Typ.
0.9
Max
1.0
Unit
V
Saturation voltage, collector-
emitter
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
CTR
Min
Typ.
400
Max
Unit
Current Transfer Ratio
IF = 2.0 mA, VCE = 10 V
IL(D,Q)66-1
100
%
IL(D,Q)66-2
IL(D,Q)66-3
CTR
CTR
300
400
500
500
%
%
IF = 0.7 mA, VCE = 10 V
IF = 2.0 mA, VCE = 5.0 V
IL(D,Q)66-4
CTR
500
750
%
Document Number 83638
Rev. 1.5, 26-Oct-04
www.vishay.com
3
IL66/ ILD66/ ILQ66
Vishay Semiconductors
VISHAY
Switching Characteristics
Parameter
Test condition
Symbol
tr
Min
Typ.
Max
200
Unit
Rise time -1, -2, -4
VCC = 10 V
µs
Fall time -1, -2, -4
Rise time -3
IF = 2.0 mA, RL = 100 Ω
IF = 0.7 mA
tf
tr
tf
200
200
200
µs
µs
µs
Fall time -3
VCC = 10 V, RL = 100 Ω
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.4
1.3
1.2
1.2
1.0
0.8
Normalized to:
V
I
= 5 V
CE
= 10 mA
T
T
= -55°C
= 25°C
V
= 1 V
CE
A
F
1.1
1.0
0.9
A
0.6
0.4
0.2
0.0
T
= 100°C
A
V
= 5 V
CE
0.8
0.7
.1
1
10
IF - LED Current - mA
100
1000
.1
1
10
100
I
- Forward Current - mA
F
iil66_01
iil66_03
Figure 1. Forward Voltage vs. Forward Current
Figure 3. Normalized Non-saturated and Saturated CTRCE vs.
LED Current
2.0
1.5
10000
V
= 1 V
CE
Normalized to:
1000
100
10
V
= 5 V
CE
= 2 mA
I
F
V
= 5 V
CE
V
= 5 V
CE
1.0
1
0.5
0.0
.1
V
= 1 V
CE
.01
.001
.1
1
10
100
1
.1
10
100
I
- LED Current - mA
F
I
- LED Current - mA
F
iil66_02
iil66_04
Figure 2. Normalized Non-saturated and Saturated CTRCE vs.
LED Current
Figure 4. Non-Saturated and Saturated Collector Emitter Current
vs. LED Current
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4
Document Number 83638
Rev. 1.5, 26-Oct-04
IL66/ ILD66/ ILQ66
VISHAY
Vishay Semiconductors
1000
100
50
40
Vcc = 5 V
10 KΩ
Vth = 1.5 V
30
20
10
1
220 Ω
10
0
.1
.1
0
5
10
15
20
1
10
100
IF - LED Current - mA
IF - LED Current - mA
iil66_05
iil66_08
Figure 5. Collector-Base Photocurrent vs. LED Current
Figure 8. High to low Propagation Delay vs. Collector Load
Resistance and LED Current
10000
1000
150
V
V
= 5 V
= 1 V
CE
CE
10 KΩ
2 KΩ
125
100
100
10
75
50
1
Vcc = 5 V
Vth = 1.5 V
.1
25
0
220 KΩ
.01
.001
0
5
10
15
20
0
.1
10
100
1000
IF - LED Current - mA
I
- Base current - µs
B
iil66_06
iil66_09
Figure 6. Collector-Emitter Current vs.LED Current
Figure 9. Low to High Propagation Delay vs. Collector Load
Resistance and LED Current
25000
20000
15000
10000
5000
I
F
V
= 5 V
CE
t
R
D
t
V
O
t
PLH
V
= 1 V
CE
V
=1.5 V
TH
0
t
F
t
t
S
10
- Base Current - µA
1
.1
100
1000
PHL
I
B
iil66_07
iil66_10
Figure 7. Non-Saturated and Saturated HFE vs. LED Current
Figure 10. Switching Waveform
Document Number 83638
Rev. 1.5, 26-Oct-04
www.vishay.com
5
IL66/ ILD66/ ILQ66
Vishay Semiconductors
VISHAY
Figure 11. Switching Schematic
V
=10 V
CC
F=10 KHz,
DF=50%
R
L
V
O
I
F
iil66_11
Package Dimensions in mm
14770
www.vishay.com
6
Document Number 83638
Rev. 1.5, 26-Oct-04
IL66/ ILD66/ ILQ66
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
4
5
3
6
1
8
2
7
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
.300 (7.62)
.031 (0.79)
typ.
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.250(6.35)
.050 (1.27)
10°
.110 (2.79)
.130 (3.30)
.020 (.51 )
.035 (.89 )
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54) typ.
i178006
Package Dimensions in Inches (mm)
pin one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10 11 12 13 14 15 16
ISO Method A
.779 (19.77 )
.790 (20.07)
.300 (7.62)
typ.
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
4°
.020(.51)
.035 (.89)
.018 (.46)
.022 (.56)
.100 (2.54)typ.
.050 (1.27)
i178007
Document Number 83638
Rev. 1.5, 26-Oct-04
www.vishay.com
7
IL66/ ILD66/ ILQ66
Vishay Semiconductors
VISHAY
Option 7
Option 9
.300 (7.62)
TYP.
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.331 (8.4)
MIN.
15° max.
18494
.315 (8.00)
min.
.406 (10.3)
MAX.
www.vishay.com
8
Document Number 83638
Rev. 1.5, 26-Oct-04
IL66/ ILD66/ ILQ66
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83638
Rev. 1.5, 26-Oct-04
www.vishay.com
9
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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