IR-475UH+-3%ESE2 [VISHAY]

General Purpose Inductor, 75uH, 3%, Iron-Core,;
IR-475UH+-3%ESE2
元器件型号: IR-475UH+-3%ESE2
生产厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用:

General Purpose Inductor, 75uH, 3%, Iron-Core,

PDF文件: 总4页 (文件大小:66K)
下载文档:  下载PDF数据表文档文件
型号参数:IR-475UH+-3%ESE2参数

IR-475UH+-3%EVE2

General Purpose Inductor, 75uH, 3%, Iron-Core,

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0 VISHAY

IR-475UH+-5%EBE2

General Purpose Inductor, 75uH, 5%, Iron-Core,

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0 VISHAY

IR-475UH+-5%ERE2

General Purpose Inductor, 75uH, 5%, Iron-Core,

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0 VISHAY

IR-475UH+-5%ESE2

General Purpose Inductor, 75uH, 5%, Iron-Core,

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0 VISHAY

IR-475UH+-5%EVE2

General Purpose Inductor, 75uH, 5%, Iron-Core,

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0 VISHAY

IR-475UH5%

General Fixed Inductor, 1 ELEMENT, 75 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR

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0 VISHAY

IR-48.2UH+-10%EBE2

General Purpose Inductor, 8.2uH, 10%, Iron-Core,

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0 VISHAY

IR480BG06DCBPBF

Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER

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0 IRF

IR480BG06DPBF

Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, DIE

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0 IRF

IR480BG12D

Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, DIE

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-
0 IRF

IR480BG12DCBPBF

Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER

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-
0 IRF

IR480BG12DPBF

Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, DIE

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0 IRF

IR480DG06HCBPBF

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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0 IRF

IR480DM08CPBF

Rectifier Diode, 1 Phase, 1 Element, 800V V(RRM), Silicon, DIE

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0 IRF

IR480DM12CPBF

Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, DIE

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0 IRF