IR080DM12C [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 2.03 X 2.03 MM, DIE-2;
| 型号： | IR080DM12C |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 2.03 X 2.03 MM, DIE-2 二极管 |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0529J 09/04
IR080DM12CCB
STANDARD RECOVERY DIODES
Junction Size:
Wafer Size:
Square 80 x 80 mils
4"
VRRM Class:
1200 V
Passivation Process:
Glassivated MOAT
Reference IR Packaged Part: 4EWS..S Series
Major Ratings and Characteristics
Parameters
Units
1.1 V
TestConditions
VFM
Maximum Forward Voltage
TJ = 25°C, IF = 4 A
VRRM Reverse Breakdown Voltage
1200 V
TJ = 25°C, IRRM = 10 µA
(1)
(1)Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al (5 µm)
Nominal Front Metal Composition, Thickness
Chip Dimensions
80 x 80 mils (see drawing)
100 mm, with std. < 110 > flat
290 µm, ± 10 µm
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
45 µm
Reject Ink Dot Size
0.25 mm diameter minimum
See drawing
Ink Dot Location
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen, with no contamination
Document Number: 93880
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1
IR080DM12CCB
Bulletin I0529J 09/04
Ordering Information Table
Device Code
IR 080
D
M
12
C
CB
3
4
5
7
1
2
6
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: D = Wire Bondable Standard Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: Code x 100 = VRRM
Metallization: C = Aluminium (Anode) - Silver (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
2030
310
R 210(4x)
All dimensions are in microns
Document Number: 93880
www.vishay.com
2
IR080DM12CCB
Bulletin I0529J 09/04
Wafer Layout
TOP VIEW
N° 1596 Basic Cells
All dimensions are in millimeters
Document Number: 93880
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3
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
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相关型号：
IR080DM12CCB
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 2.03 X 2.03 MM, DIE-2
VISHAY
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