IR180DM08C [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 800V V(RRM), Silicon, 4 INCH, WAFER;
| 型号： | IR180DM08C |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 800V V(RRM), Silicon, 4 INCH, WAFER 二极管 |
| 文件： | 总4页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0120J rev. A 02/97
IR180DM..CCB SERIES
STANDARD RECOVERY DIODES
Junction Size:
Wafer Size:
Square 180 mils
4"
VRRM Class:
800 and 1200 V
Passivation Process:
Glassivated MOAT
Reference IR Packaged Part: 20ETS Series
Major Ratings and Characteristics
Parameters
Units
TestConditions
VFM
Maximum Forward Voltage
1050 mV
TJ = Amb., IF = 20 A
VRRM Reverse Breakdown Voltage Range
800 and 1200 V TJ = Amb., IRRM = 100 µA
(1)
(1)Nitrogen flow on die edge.
Mechanical Characteristics
NominalBackMetalComposition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
NominalFrontMetalComposition, Thickness
ChipDimensions
180 x 180 mils (see drawing)
100 mm, with std. < 110 > flat
300 µm
WaferDiameter
WaferThickness
MaximumWidthofSawingLine
45 µm
Reject Ink Dot Size
0.25mmdiameterminimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
Document Number: 93826
www.vishay.com
1
IR180DM..CCB Series
Bulletin I0120J rev. A 02/97
Ordering Information Table
Device Code
IR 180
D
M
12
C
CB
3
1
2
4
5
6
7
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Available Class
08 = 800 V
RRM
12 = 1200 V
6-7 MCBetall=izaPtioronb:eCd=UAncluumt Diniieum(w(aAfenrodineb) o-xS)ilver (Cathode)
None = Probed Die in chip carrier
Outline Table
All dimensions are in microns (mils)
Document Number: 93826
www.vishay.com
2
IR180DM..CCB Series
Bulletin I0120J rev. A 02/97
Wafer Layout
TOP VIEW
N° 293 Basic Cells
All dimensions are in millimeters
Document Number: 93826
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
www.vishay.com
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