IR255SG06HCB [VISHAY]
Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER;
| 型号： | IR255SG06HCB |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER 栅 栅极 |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet I0211J 12/99
IR255SG..HCB
PHASE CONTROL THYRISTORS
Junction Size:
Wafer Size:
Square 250 mils
4"
VRRMClass:
600 to 1200 V
Glassivated MESA
Passivation Process:
Reference IR Packaged Part: n. a.
Major Ratings and Characteristics
Parameters
Units
Test Conditions
VTM
Maximum On-state Voltage
1.25V
TJ=25°C, IT = 2 5 A
VDRM/VRRM DirectandReverse Breakdown Voltage
600 to 1200 V TJ = 25°C, IDRM/IRRM = 100 µA
(1)
IGT
VGT
IH
Max.RequiredDCGateCurrent toTrigger
Max. RequiredDCGateVoltagetoTrigger
Holding Current Range
80mA
2 V
TJ=25°C,anodesupply=6V,resistiveload
TJ=25°C,anodesupply=6V,resistiveload
5 to 100 mA Anodesupply=6V, resistiveload
IL
Maximum Latching Current
300mA
Anodesupply=6V, resistiveload
(1)Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition,Thickness
Cr-Ni-Ag(1KA-4KA -6KA)
Cr-Ni-Ag(1KA-4KA -6KA)
250x250mils(seedrawing)
100mm,withstd.<110>flat
330µm±10µm
Nominal Front Metal Composition,Thickness
Chip Dimensions
WaferDiameter
Wafer Thickness
Maximum Width of SawingLine
Reject Ink Dot Size
130µm
0.25mmdiameterminimum
Seedrawing
Ink Dot Location
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen, with no contamination
Document Number: 93839
www.vishay.com
1
IR255SG..HCB
Preliminary Data Sheet I0211J 12/99
Ordering Information Table
Device Code
IR 255
S
G
12
H
CB
1
2
3
4
5
6
7
13245- TICPVnyoahtpeslitprseanigDvoaeafitmitDocioonenndvaislePciR:oeroCe:ncSoietndi=sfeiMseS:xrilGosD1l0ed=0veirc=GaeblValessSivCaRted MESA
Available Class
06 = 600 V
08 = 800 V
12 =1200 V
RRM
6-7 MCBetall=izaPtioronb:eHd=USniclvuetrD(Aien(owdaef)e-rSinilvbeorx()Cathode)
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimiters
Document Number: 93839
www.vishay.com
2
IR255SG..HCB
Preliminary Data Sheet I0211J 12/99
Wafer Layout
TOP VIEW
N° 148 Basic Cells
All dimensions are in millimiters
Document Number: 93839
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
www.vishay.com
1
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