关闭背景特效

IRF-13.9+/-10% [VISHAY]

General Fixed Inductor, 1 ELEMENT, 3.9 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED;

IRF-13.9+/-10%


元器件型号：	IRF-13.9+/-10%
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	General Fixed Inductor, 1 ELEMENT, 3.9 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED 测试射频感应器电感器
PDF文件：	总3页 (文件大小：98K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF-13.9+/-10%参数

IRF130

N-CHANNEL POWER MOSFETS

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319 SAMSUNG

IRF130

N-CHANNEL POWER MOSFET

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106 SEME-LAB

IRF130

14A, 100V, 0.160 Ohm, N-Channel Power MOSFET

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99 INTERSIL

IRF130

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)

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201 IRF

IRF130

N-Channel Power MOSFETs, 20 A, 60-100 V

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137 FAIRCHILD

IRF130

Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

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2 VISHAY

IRF130

IRF130

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0 TI

IRF130

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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6 SAMSUNG

IRF130

14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

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8 ROCHESTER

IRF130-133

N-Channel Power MOSFETs, 20 A, 60-100 V

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104 FAIRCHILD

IRF1302

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)

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155 IRF

IRF1302L

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)

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45 IRF

IRF1302L

Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN

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0 IRF

IRF1302LPBF

Power Field-Effect Transistor, 174A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

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1 IRF

IRF1302LTRL

Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

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0 IRF

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