IRF-15.6UH+-10%ESE2 [VISHAY]

General Purpose Inductor, 5.6uH, 10%, Ferrite-Core,;
IRF-15.6UH+-10%ESE2
元器件型号: IRF-15.6UH+-10%ESE2
生产厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用:

General Purpose Inductor, 5.6uH, 10%, Ferrite-Core,

PDF文件: 总4页 (文件大小:68K)
下载文档:  下载PDF数据表文档文件
型号参数:IRF-15.6UH+-10%ESE2参数

IRF-15.6UH+-5%EBE2

General Purpose Inductor, 5.6uH, 5%, Ferrite-Core,

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0 VISHAY

IRF-15.6UH+-5%ERE2

General Purpose Inductor, 5.6uH, 5%, Ferrite-Core,

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0 VISHAY

IRF150

N-CHANNEL POWER MOSFETS

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461 SAMSUNG

IRF150

N-CHANNEL POWER MOSFET

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139 SEME-LAB

IRF150

40A, 100V, 0.055 Ohm, N-Channel Power MOSFET

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347 INTERSIL

IRF150

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)

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514 IRF

IRF150

N-Channel Power MOSFETs, 40 A, 60 V/100 V

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315 FAIRCHILD

IRF150

HIGH VOLTAGE POWER MOSFET DIE

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143 IXYS

IRF150

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED

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1387 ETC

IRF150

HIGH VOLTAGE POWER MOSFET DIE

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378 IXYS

IRF150

Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

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7 IRF

IRF150

Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

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14 VISHAY

IRF150-153

N-Channel Power MOSFETs, 40 A, 60 V/100 V

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86 FAIRCHILD

IRF1503

AUTOMOTIVE MOSFET

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185 IRF

IRF1503L

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 190A I(D) | TO-262AA

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75 ETC