IRF610PBF [VISHAY]

Power MOSFET; 功率MOSFET

IRF610PBF


型号：	IRF610PBF
厂家：	VISHAY TELEFUNKEN
描述：	Power MOSFET 功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲 PC 局域网
文件：	总8页 (文件大小：594K)
下载：	下载PDF数据表文档文件

IRF610R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-220AB

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49 ETC

IRF610S

HEXFET Power MOSFET

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171 IRF

IRF610S

2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 MOTOROLA

IRF610SPBF

HEXFET㈢ Power MOSFET

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44 IRF

IRF610STRL

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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2 VISHAY

IRF610STRRPBF

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 VISHAY

IRF611

N-Channel Power MOSFETs, 3.5A, 150-200V

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95 FAIRCHILD

IRF611

Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 IRF

IRF611

TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,3.3A I(D),TO-220AB

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1 TI

IRF611

Power Field-Effect Transistor, 2.5A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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2 VISHAY

IRF611-006

Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRF611-011PBF

Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF611-013PBF

Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF611R

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.3A I(D) | TO-220AB

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33 ETC

IRF612

N-Channel Power MOSFETs, 3.5A, 150-200V

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115 FAIRCHILD

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